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˜d”#Q: ZnCdTe, ZnTe, €ªœĺÓüt, YUs$, éߖ©œ

Electronic Properties of ZnCdTe/ZnTe Quantum-well Structures

Seoung-Hwan Park

Department of Electronics Engineering, Catholic University of Daegu, Gyeongsan, 712-702 (Received 22 December 2010 : revised 5 January 2011 : accepted 8 March 2011)

The electronic properties of zinc-blende ZnCdTe/ZnTe quantum-well (QW) structures were stud- ied as a function of the Zn composition by using multiband effective mass theory. The transition wavelength changed from 550 to 700 nm in the range of Zn composition from 0.2 to 0.8. The energy separation between the first two subbands gradually decreased with increasing Zn composition.

Also, the average effective mass of holes increased with increasing Zn composition. The rate of increase of the hole’s effective mass below x = 0.6 was larger than that above x = 0.6. The optical matrix element near the band edge was shown to decrease with increasing Zn composition.

PACS numbers: 42.55.Px, 42.60.-v, 71.22.+i, 72.80.Ey

Keywords: ZnCdTe, ZnTe, quantum well, laser, short wavelength

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