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Wurtzite InGaN/GaN W ë s – ¤ ö n Ú 7 _T $ [8 ý ° Ë Ñ] K ¡X ì Ä — ¤V R Ë; c Q V À W ¥ = k„ ÇÊ Ý

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Wurtzite InGaN/GaN W ë s – ¤ ö n Ú 7 _T $ [8 ý ° Ë Ñ] K ¡X ì Ä — ¤V R Ë; c Q V  À W ¥  = k„ ÇÊ Ý

ƒ

‘

šŠ û BZ 9  · ™ »é s* > · ™ »ø ¶ B< 

@

/½ ¨d  ¦a Ë :@ /† < Ɠ § Ó ü t o ì ø ͕ ¸^ ‰õ † < Ƅ  / B N, @ /½ ¨ 712-702 (2004¸   3 Z 4 8{ 9  ~ à Î6 £ §)

Wurtzite (WZ) InGaN/GaN € ª œ Ä ºÓ ü t Y Us $ _  s 1 p q, p ì  r s 1 p q, Ï ã J] X Ö  ¦   o, ‚  ; Ÿ ¤S X ‰ © œ“   ü < ° ú  

“ É

r F g† < Æ& h  : £ ¤$ í \   ^ ‰´ òõ  p u   H % ò † ¾ Ós  › ¸ ÷ &% 3  .  ½ ™× ¼½ ¨› ¸ü < 1 l x† < Êà º  H self-consistent ~ ½ Ó Z O

`  ¦ ½ ¨ % i Ü ¼ 9,  ^ ‰— ¸4 S qõ   Ä »„   — ¸4 S q_    õ \  ¦ q “ §  Ž ž Ð % i  . F g† < Æ& h  s 1 p q“ É r Ù ü t2 Ÿ xS X ‰ © œ ´ ò õ

\  _ K  x ß ¼ s 1 p q s  7 £ x † < Êõ  1 l x r \  é ß –  © œ A á ¤ Ü ¼– Ð s 1 l x   H ' õ AÒ  os 1 l x s  { 9 # Qz Œ ™`  ¦ ˜ Ð# ŒÅ Ò% 3  .

Ù ü

t2 Ÿ xS X ‰ © œ “   _  î  rì ø Í  x 9 • ¸ _ ” > r$ í _   â Ä º, e  ¦  Ý ¼  Û ¼ß ¼o _ ç ´ òõ  M :ë  H \  î  rì ø Í  x 9 • ¸ 7 £ x  

€ 

 Ù ü t2 Ÿ xS X ‰ © œ “     H & h  & h Ü ¼– Ð y Œ ™™ è† < Ê`  ¦ ˜ Ð# ŒÅ Ò% 3  . ± ú “ É r î  rì ø Í x 9 • ¸ % ò % i \ " f  H  Ä »„   — ¸4 S q“ É r



^ ‰— ¸4 S q_   כ ˜ Ð   8  H ‚  ; Ÿ ¤S X ‰ © œ“   \  ¦ ˜ Ð# Œº ¡ § \  q K ,  H î  rì ø Í  x 9 • ¸ % ò % i \ " f  Ä »„   — ¸4 S q_ 

‚ 

; Ÿ ¤S X ‰ © œ“     ^ ‰— ¸4 S q_  ° ú כ\  q K   Œ •6 £ § s  › ' a8 £ ¤ ÷ &  H X <, Õ ª s Ä »  H p ì  r s 1 p qdg/dN “ É r " f– Ð q 5 p w

t ë ß – p ì  r Ï ã J] X Ò  ¦    o d(δn)/dN   H  ^ ‰— ¸4 S q_  ° ú כs  ß ¼l  M :ë  H s % 3  .

PACS numbers: 78.73, 78.81, 78.85

Keywords:  ^ ‰´ òõ , InGaN, GaN, € ª œ  Ä ºÓ ü t, s 1 p q, Ï ã J] X Ö  ¦, ‚  ; Ÿ ¤S X ‰ © œ“   

I. " e  ] Ø

GaN › ' aº   € ª œ Ä ºÓ ü t Y Us $   H InP   GaAs › ' aº   Y Us 

$

ü <   É r # Œ Q t  < É ª p – Ðî  r : £ ¤$ í `  ¦ t “ ¦ e ”  . 7 £ ¤, c-¨ î €  `  ¦    $ í  © œ ) a wurtzite(WZ) GaN › ' aº   Y Us $   H 6

£

x§ 4 \  _ ô  Ç · ú š„  ì  rF G ü @\ • ¸  H  µ 1 Ïì  rF G`  ¦ t   H  כ Ü

¼– Ð   z Œ ¤Ü ¼ 9, z  ´+ « >õ  s  : rƒ  ½ ¨   õ   H GaN › ' aº   € ª œ



Ä ºÓ ü t ½ ¨› ¸_  „  l & h  x 9 F g† < Æ& h  : £ ¤$ í s  s  Qô  Ç ì  rF G \  _ K  ß ¼>  % ò † ¾ Ó ~ à Î6 £ §`  ¦ ˜ Ð# ŒÅ Ò% 3   [1–6]. ¢ ¸ô  Ç, GaN › ' a º 

 € ª œ Ä ºÓ ü t ½ ¨› ¸_   â Ä º " l or — : r   ½ + Ë \  -t  ß ¼l  M : ë

 H \   ^ ‰´ òõ   Å Ò ß ¼>    z Œ ™s  · ú ˜ 94 R e ”   [7,8].



^ ‰´ òõ   H e  ¦  Ý ¼  o l ,  ½ ™× ¼Ì “ s F ½ ©   o,  ½ ™× ¼ç ß – … 

;s  S X ‰Ò  ¦ \  @ /ô  Ç Ù ü t2 Ÿ xS X ‰ © œ(Coulomb enhancement)õ  ° ú  

“ É

r ´ òõ [ þ t`  ¦ Ÿ í† < Êô  Ç .   " f, ™ è  [ O > \  e ” # Q" f ì  rF G

\

 _ ô  Ç ´ òõ ü <  Ö  ¦  Q  ^ ‰´ òõ \  @ /ô  Ç s K  @ /é ß –y 

×

 æ כ ¹ô  Ç % i ½ + É`  ¦ ½ + É  כ Ü ¼– Ð l @ /  ) a  . Õ ª Q , GaN › ' aº   Y

Us $ _  s 1 p q / B G‚  , p ì  r s 1 p q, Ï ã J] X Ò  ¦    o, ‚  ; Ÿ ¤S X ‰ © œ

“

  (linewidth enhancement factor)ü < ° ú  “ É r F g† < Æ& h  : £ ¤$ í

\

 @ /ô  Ç  ^ ‰´ òõ \  @ /K " f  H  f ”  ´ ú §“ É r  Òì  r[ þ t s  ƒ  ½ ¨

÷

&# Q e ” t  · ú § . : £ ¤ y , ‚  ; Ÿ ¤S X ‰ © œ “    < ʓ É r “     H ì ø ͕ ¸

^

‰ Y Us $ ü < ì ø ͕ ¸^ ‰ F g7 £ x; Ÿ ¤ l _  Û ¼& 7 ˜à Ô! 3  $ í | 9 `  ¦   & ñ

  H ×  æ כ ¹ô  Ç B > h  à ºs  9 [9], terahertz (THz) ”  1 l x à º

E-mail: [email protected]

’

   ñ\  ¦ ë ß –× ¼  H X <  6   x ÷ &  H * 3 á Ô Y Us $ \ " f ×  æ כ ¹ô  Ç % i 

½ +

É`  ¦ ô  Ç . þ j  H, ì  rF g l ü <   É r “ ¦$ í 0 p x_  6 £ x6   x \   6   x

÷

&  H ç ß –¼ #  “ ¦• ¸ a % v“ É r ‚  ; Ÿ ¤`  ¦ ”  , Å Ò à º   › ¸0 p xô  Ç THz ~ ½ Ó 0 p x " é ¶(source) s  ] jî ß –÷ &% 3   H X <, # Œl " f ¿ º > h _  DBR (distributed-Bragg-reflectror)  s š ¸× ¼ Y Us $ 

 * 3 á Ô " é ¶ Ü ¼– Ð  6   x ÷ &% 3 “ ¦ y Œ • Y Us $ _  ‚  ; Ÿ ¤ s  B Ä º ×  æ כ

¹    H  z  ´s  µ 1 ß) €”     e ”   [10]. “ ¦ Ø  ¦§ 4  GaN › ' a º 

 € ª œ Ä ºÓ ü t (QW: quantum well) Y Us $   H s [ þ t ƒ  ½ ¨ ì

 r  \ " f  Œ ™F & h “   6 £ x6   x$ í `  ¦ t “ ¦ e ” Ü ¼ 9, Y Us $ _ 

‚ 

; Ÿ ¤S X ‰ © œ “   \  @ /ô  Ç s K   H B Ä º ×  æ כ ¹  . ‘ : r ƒ  ½ ¨

\

" f  H, WZ InGaN/GaN € ª œ Ä ºÓ ü t Y Us $ _  F g† < Æ& h  : £ ¤

$ í

\   ^ ‰´ òõ  p u   H % ò † ¾ Ó`  ¦ › ¸  “ ¦  ô  Ç .  ½ ™× ¼

½

¨› ¸ü < 1 l x† < Êà º  H · ú š„  ì  rF G õ   µ 1 Ïì  rF G \  _ ô  Ç ? / ҁ © œ

`

 ¦ “ ¦ 9 # Œ self-consistent ~ ½ ÓZ O Ü ¼– Ð ½ ¨ % i Ü ¼ 9, s  כ

“ É

r „   \  @ /ô  Ç / 'ø @` ç   ~ ½ Ó& ñ d ” , & ñ / B N \  @ /ô  Ç ^  ¦2 Ÿ ¤ @ / y

Œ

• o ) a 3x3 x 9 ž Ðm î ß –, Õ ªo “ ¦ Poisson ~ ½ Ó& ñ d ” `  ¦ ì ø Í4 Ÿ ¤

&

h Ü ¼– Ð Û  ¦ # Q" f % 3 # Q”    [3,11]. # Œl " f ¿ º t _   â Ä º

\

 ¦ “ ¦ 9   H X <,  ^ ‰(MB: many-body)— ¸4 S q“ É r „   ü < & ñ /

B

N  s _   ^ ‰ Ù ü t2 Ÿ x  © œ  ñ Œ •6   x`  ¦ “ ¦ 9ô  Ç  â Ä ºs “ ¦,  Ä »

„ 

 (FC: free-carrier)— ¸4 S q“ É r s  Qô  Ç  ^ ‰´ òõ \  ¦ “ ¦ 9  t

 · ú §“ É r  â Ä º\  ¦    · p . “ ¦ 9  ) a ½ ¨› ¸  H, ¿ º î  r GaN l

ó ø Í0 A\  $ í  © œ ) a compressively strain  ) a InGaN Ä ºÓ ü t õ 

 

 & ñ ½ + ˝ ) a GaN  © œ# 4 `  ¦ ”    8 £ x € ª œ Ä ºÓ ü t s  .

-282-

(2)

II. T  Â ] Ø



^ ‰´ òõ \  ¦ ”   interband …  ;s \  @ /ô  Ç F g† < Æ& h  s  1

p q(gain)“ É r

g(ω) = r µ o



 e 2 m 2 o ω

 Z

0

dk || k ||

πL w |M lm | 2 [f l c (k || ) + f m v (k || ) − 1]L g (k || , ~ω). (1)

–

Ð Å Ò# Qt “ ¦, î  rì ø Í \  _ ô  Ç  ^ ‰´ òõ \  ¦ ”   Ï ã J] X Ò  ¦“ É r

δn e (ω) = − r µ o



 ce 2 m 2 o ω 2

 Z

0

dk || k ||

πL w

|M lm | 2 [f l c (k || ) + f m v (k || ) − 1]L n (k || , ~ω), (2)

–

Ð Å Ò# Qt   H X <, # Œl " f µ o   H ”  / B N È Ò Ö  ¦(permeability),

 “ É r Ä »„   © œÃ º, c   H ”  / B N \ " f_  F g5 Å q, ~   H Planck  © œÃ º, k ||   H in-plane à º 7 ˜' , |M lm | 2   H momentum matrix element, Õ ªo “ ¦ f l c õ  f m v “ É r „  • ¸{ ü < „   { \ " f_ 

`

…Ø Ôp  † < Êà ºs  .  ^ ‰´ òõ – Ð F ½ ©   o ) a s 1 p q õ  Ï ã J] X Ö  ¦

 

 o\  @ /ô  Ç non-Markovian ‚  — ¸€ ª œ† < Êà º(line shape func- tion)  H  6 £ § õ  ° ú  s  Å Ò# Q”    [12,13]. 7 £ ¤,

L g (k || , ~ω) = (1 − ReQ(k || , ~ω))ReΞ(E lm (k || , ~ω)) − ImQ(k || , ~ω)ImΞ(E lm (k || , ~ω)) (1 − ReQ(k || , ~ω)) 2 + (ImQ(k || , ~ω)) 2

Õ ªo “ ¦

L n (k || , ~ω) = (1 − ReQ(k || , ~ω))ImΞ(E lm (k || , ~ω)) + ImQ(k || , ~ω)ReΞ(E lm (k || , ~ω))

(1 − ReQ(k || , ~ω)) 2 + (ImQ(k || , ~ω)) 2 , (3)

#

Œl " f

ReΞ(E lm (k || , ~ω)) =

r πτ co

2~Γ cv (k || , ~ω) exp



− τ co

2~Γ cv (k || , ~ω) E lm 2 (k || , ~ω)



(4) Õ

ªo “ ¦

ImΞ(E lm (k || , ~ω)) = τ co

~ Z ∞

0

exp



− Γ cv (k || , ~ω)τ co 2~ t 2



sin  τ co E lm (k || , ~ω)

~

t



dt. (5)

0

A_  d ” \ " f, E lm (k || , ~ω) = E l c (k || ) − E m v (k || ) +E g +

∆E SX +∆E CH − ~ω   H F ½ ©   o ) a „   ü < & ñ / B N  s  _

 …  ;s  \  -t s “ ¦, # Œl " f E g   H Ó ü t| 9 _   ½ ™× ¼Ì “ ss  .



½ ™× ¼Ì “ s F ½ ©   o  H Coulomb-hole self energy (∆E CH ) ü

< screened-exchange shift (∆E SX )_  ½ + ËÜ ¼– Ð Å Ò# Q”   .

Q(k || , ~ω)   H interband …  ;s  S X ‰Ò  ¦_  " l or — : r(excitonic) < Ê

“ É

r Ù ü t2 Ÿ xS X ‰ © œõ  › ' aº   ) a † ½ Ó`  ¦    · p . 0 A_  ~ ½ Ó& ñ d ” \ " f Γ cv (k || , ~ω)   H „   ü < & ñ / B N 1 l x† < Êà º_  Ô  æ õ ü < › ' aº   ) a

broadening “   s  . Intraband s  ¢ - a r ç ß – τ in õ   © œ› ' a r  ç

ß –(correlation time) τ co   H  © œÃ º “ ¦ & ñ ô  Ç . s [ þ t ° ú כ [

þ

t“ É r z  ´+ « >u ü <_  fitting B > h  à º– Ð  6   x| ¨ c à º e ” Ü ¼ 9,

#

Œl " f  H 25 ü < 10 fs _  ° ú כs   6   x ÷ &% 3  . s [ þ t ° ú כ“ É r z  ´ +

« >u ü <_  fitting Ü ¼– РÒ'    & ñ ÷ &% 3   [8].

‚ 

; Ÿ ¤S X ‰ © œ “     H α e = − 4π

λ

d(δn e )/dN

dg/dN (6)

(3)

Fig. 1. (a) Gain spectra of WZ In 0.1 Ga 0.9 N/GaN(L w

=30 ˚ A) QW laser. The solid and dashed lines corre- spond to results obtained from many-body model and free-carrier model with only band gap renormalization.

–

Ð Å Ò# Qt  9, # Œl " f dg/dN “ É r p ì  r s 1 p q s “ ¦ d(δn e )/

dN “ É r î  rì ø Í  Å Ò (injection) \  _ ô  Ç Ï ã J] X Ö  ¦_  7 £ xì  r  



o(incremental change)`  ¦    · p .  µ 1 Ïì  rF G õ  · ú š„  ì  r F

G \  _ ô  Ç € ª œ Ä ºÓ ü t õ   © œ# 4 \ " f_  „   © œ“ É r Å Òl   â >  › ¸

|

Ü ¼– РÒ'  Æ Ò& ñ ÷ &% 3  . [14] > í ß –\   6   x ) a Ó ü t o  © œÃ º[ þ t

\

 @ /ô  Ç ° ú כ[ þ t“ É r  ½ ™× ¼Ì “ s`  ¦ ] jü @ “ ¦  H Table 1 \  & ñ o 

÷

&# Q e ”  . In x Ga 1 −x N \  @ /ô  Ç  ½ ™× ¼Ì “ s_   â Ä º E g (eV)

= 1.89x + 3.44(1-x)-3.2x(1-x) _  › ' a > d ” s   6   x ÷ &% 3  .

[15]

III. + s ÇÊ Ý õ m Í w в  o

Fig. 1“ É r (a) WZ In 0.1 Ga 0.9 N/GaN (L w = 30 ˚ A) ü <

(b) InGaAsP/InGaAsP(0.98 eV)/InP € ª œ Ä ºÓ ü t Y Us $  _  s 1 p q / B G‚  `  ¦ ˜ Ð# ŒÅ ғ ¦ e ”  . z  ´‚  õ  & h ‚  “ É r y Œ •y Œ •  

^

‰— ¸4 S qõ   ½ ™× ¼Ì “ s F ½ ©   oë ß –\  ¦ “ ¦ 9ô  Ç  Ä »„   — ¸4 S q_ 

 

õ \  ¦    · p . s 1 p q / B G‚  “ É r InGaN/GaN € ª œ Ä ºÓ ü t_ 

 â

Ä º N 2D = 10 × 10 12 cm −2 _  î  rì ø Í  x 9 • ¸\ " f, Õ ª o

“ ¦ InGaAsP/InGaAsP € ª œ Ä ºÓ ü t_   â Ä º N 2D = 5 × 10 12 cm −2 _  î  rì ø Í  x 9 • ¸\ " f > í ß –÷ &% 3 Ü ¼ 9, s 1 p q / B G‚   _  x ß ¼  H C1-HH1 …  ;s \  K { © œô  Ç . ¿ º — ¸4 S q`  ¦ q “ §K 

˜

Ѐ   Ù ü t2 Ÿ xS X ‰ © œ\  _ K       H ´ òõ [ þ t`  ¦ ^  ¦ à º e ”   H X <, Õ

ª ×  æ   Figure \ " f ³ ðr   ) a  כ % ƒ! 3  s 1 p q_  7 £ x s 



. s 1 p q 7 £ x _  " é ¶ “  “ É r GaN › ' aº   ì ø ͕ ¸^ ‰_   â Ä º " l or 

—

: r   ½ + Ë\  -t  ß ¼l  M :ë  H \  „   ü < & ñ / B N_  …  ;s  S X ‰Ò  ¦ s

 7 £ x  l  M :ë  H s  . InGaN/GaN › ' aº   € ª œ Ä ºÓ ü t ½ ¨› ¸ _

  â Ä º s  Qô  Ç  ^ ‰´ òõ \  _ ô  Ç s 1 p q_  7 £ x  l ” > r_  InGaAsP/InGaAsP € ª œ Ä ºÓ ü t ½ ¨› ¸\  q K  B Ä º ß ¼   H

 כ

`  ¦ · ú ˜ à º e ”  . s  כ “ É r GaN › ' aº   Y Us $ _   â Ä º „   

Fig. 2. (a) Peak gain and (b) Coulomb enhancement factor as a function of the surface carrier density of WZ In 0.1 Ga 0.9 N/GaN QW lasers.

ü

< & ñ / B N_  Ä »´ ò| 9 | ¾ Ós  l ” > r_  GaAs   InP › ' aº   Y Us $ 

\

 q K  B Ä º ß ¼l  M :ë  H s  . { 9 ì ø Í& h Ü ¼– Ð, s 1 p q x ß ¼_  s

1 l x \  % ò † ¾ Ó`  ¦ Šҍ  H כ ¹™ è  H ß ¼>  3 t – Ð  * '# Q t   H X

<, Õ ª כ [ þ t“ É r  ½ ™× ¼ Ì “ s F ½ ©   o(& h Ò  os 1 l x),  ½ ™× ¼ G ¹ ¡ §(' õ A Ò 

os 1 l x), Õ ªo “ ¦ Ù ü t2 Ÿ xS X ‰ © œ(' õ AÒ  os 1 l x) s  . # Œl " f  H,  ½ ™

×

¼ Ì “ s F ½ ©   o\  ¦ ¿ º — ¸4 S q\  > á ¤ ° ú  s  & h 6   x % i l  M :ë  H

\

, Õ ªo “ ¦ ° ú  “ É r î  rì ø Í  0 l x • ¸\  ¦  6   x % i l  M :ë  H \ , í  H Ã

ºô  Ç Ù ü t2 Ÿ xS X ‰ © œ\  _ ô  Ç ´ òõ ë ß –     9, Figure  H Ù ü t2 Ÿ x S X

‰ © œ ´ òõ \  _ K  s 1 p q x ß ¼ é ß –  © œÜ ¼– Ð s 1 l x   H ‰ & ³



© œ(' õ AÒ  os 1 l x)`  ¦ ˜ Ð# ŒÅ ғ ¦ e ”  .

Fig. 2   H î  rì ø Í  x 9 • ¸\    É r WZ In 0.1 Ga 0.9 N/GaN

€

ª œ Ä ºÓ ü t Y Us $ _  (a) x ß ¼ s 1 p q õ  (b) Ù ü t2 Ÿ xS X ‰ © œ “   \  ¦

˜

Ð# Œï  r  . z  ´‚  õ  & h ‚   “ É r y Œ •y Œ •  ^ ‰— ¸4 S qõ   ½ ™× ¼Ì “ s F ½ ©

 

 oë ß –\  ¦ “ ¦ 9ô  Ç  Ä »„   — ¸4 S q_    õ \  ¦   ? / . Ù ü t 2

Ÿ

x S X ‰ © œ “     H  Ä »„   — ¸4 S q_  s 1 p q õ   ^ ‰— ¸4 S q_  s  1

p

q õ _  q  G many /G f ree – Ð & ñ _  ) a  . · û ª“ É r Ä ºÓ ü t ¿ ºa \  ¦

”   Y Us $ _   â Ä º î  rì ø Í  x 9 • ¸ 7 £ x † < Ê\     x ß ¼ s

1 p q s  > 5 Å q 7 £ x † < Ê`  ¦ ˜ Ð# ŒÅ Òt ë ß –,  © œ@ /& h Ü ¼– Ð ¿ º î  r Ä

ºÓ ü t ¿ ºa \  ¦ ”   Y Us $ _   â Ä º x ß ¼ s 1 p q“ É r & h  & h Ü ¼

–

Ð Ÿ í o÷ &  H ‰ & ³ © œ`  ¦ ˜ Ð# ŒÅ ғ ¦ e ”  . ¢ ¸ô  Ç, ¿ ºa   H Y U s

$ _   â Ä º ¿ ºa  · û ª“ É r Y Us $ \  q K  x ß ¼ s 1 p q s  ß ¼

>

 y Œ ™™ è† < Ê`  ¦ ˜ Ð# ŒÅ ғ ¦ e ”  . s  Qô  Ç y Œ ™™ è  H Ä ºÓ ü t ¿ ºa 

(4)

Table 1. Physical parameters of Wurtzite InN and GaN.

parameter GaN InN

Lattice constant (˚ A) 3.1892 [16] 3.53 [17]

Energy parameters

cr

= ∆

1

(meV) 22.0 [19] 41.0 [18]

so

= 3∆

2

(meV) 15.0 [19] 1.0 [18]

3

= ∆

2

(meV)

Conduction band effective masses

m

wez

/m

o

0.20 [20] 0.11 [21]

m

h

/m

o

0.80 [22] 0.50 [22]

Valence band effective-mass parameters

A

1

-6.56 [20] -9.09 [21]

A

2

-0.91 [20] -0.63 [21]

A

3

= A

2

− A

1

A

4

= A

3

/2

A

5

-3.13 [20] -4.36 [21]

A

6

= (A

3

+ 4A

5

)/p(2) Deformation potentials (eV)

a

c

-4.60 [23] -1.40 [23]

D

1

-1.70 [23] -1.76[this work]

D

2

6.30 [23] 3.43[this work]

D

3

= D

2

− D

1

D

4

= D

3

/2

D

5

-4.00 [24] -2.33[this work]

D

6

= (D

3

+ 4D

5

)/p(2) Dielectric constant

 10.0 [1] 15.3 [1]

Elastic stiffness constant (10

11

dyn/cm

2

)

C

11

39.0 [25] 27.1 [1]

C

12

14.5 [25] 12.4 [1]

C

13

10.6 [25] 9.4 [1]

C

33

39.8 [25] 20.0 [1]

C

44

10.5 [25] 4.6 [1]

Piezoelectric constant

d

31

( × 10

−12

m/V) -1.7 [1] -1.1 [1]

Spontaneous polarization constant

P

sp

(C/m

2

) -0.032 [2] -0.029 [2]

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(5)

Fig. 3. Linewidth enhancement factor as a function of the surface carrier density of WZ In 0.1 Ga 0.9 N/GaN QW lasers.

Fig. 4. (a) Differential refractive index change d(δn)/dN and (b) differential gain dg/dN as a function of the sur- face carrier density of WZ In 0.1 Ga 0.9 N/GaN QW lasers.

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IV. + s Ç Â ] Ø

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† <

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7

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%

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^

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\

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™

è˜ Ð  p ì  r s 1 p q s   8¹ ¡ ¤  Ø Ô>  y Œ ™™ è l  M :ë  H“    כ Ü ¼

–

Ð [ O " î s  0 p x  .  H î  rì ø Í  x 9 • ¸ % ò % i \ " f  H,  Ä »„  

(6)



— ¸4 S q_  ‚  ; Ÿ ¤S X ‰ © œ“     ^ ‰— ¸4 S q\  q K   Œ •6 £ § s  › ' a8 £ ¤

÷

&  H X <, Õ ª s Ä »  H p ì  r s 1 p q dg/dN “ É r " f– Ð q 5 p w t  ë

ß – p ì  r Ï ã J] X Ò  ¦    o d(δn)/dN   H  ^ ‰— ¸4 S q_  ° ú כs  ß ¼ l

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P c

p 8 ý ò k >

‘

: r ƒ  ½ ¨  H @ /½ ¨d  ¦a Ë :@ /† < Ɠ §_  ƒ  ½ ¨q t " é ¶ \  _ K  à º '

Ÿ  ) a  כ e ” .

Y c

p w Š à U Ø ”  ô

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(7)

Many-Body Effects on the Optical Properties of Wurtzite InGaN/GaN Quantum-Well Lasers

Seoung-Hwan Park, Hwa-Min Kim and Jong-Jae Kim Department of Physics & Semiconductor Science,

Catholic University of Daegu, Daegu 712-702 (Received 8 March 2004)

The many-body effects on the optical properties, such as the gain, the differential gain, the refractive-index change, and the linewidth enhancement factor, of wurtzite (WZ) InGaN/GaN quantum-well (QW) lasers are investigated using a self-consistent model. The results are com- pared with those of a free-carrier model with only band-gap renormalization. In the many-body model, the peak gain largely increases and is blueshifted by the Coulomb enhancement effect com- pared to that of the free-carrier model. The linewidth enhancement factor rapidly increases with decreasing carrier density in the range of low carrier densities. because the rate of decrease of dg/dN is larger than that of d(δn)/dN . Also, the linewidth enhancement factor of the many-body model is smaller than that of the free-carrier model in the range of low carrier densities. On the other hand, in the range of high carrier densities, the many-body model shows a larger linewidth enhancement factor than the free-carrier model. This can be explained by the fact that d(δn)/dN of the many-body model is larger than that of the free-carrier model.

PACS numbers: 78.73, 78.81, 78.85

Keywords: Many-body effects, InGaN, GaN, Quantum-well, Gain, Refractive-index, Linewidth enhancment factor

E-mail: [email protected]

수치

Fig. 1. (a) Gain spectra of WZ In 0.1 Ga 0.9 N/GaN(L w
Table 1. Physical parameters of Wurtzite InN and GaN.
Fig. 4. (a) Differential refractive index change d(δn)/dN and (b) differential gain dg/dN as a function of the  sur-face carrier density of WZ In 0.1 Ga 0.9 N/GaN QW lasers.

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