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Characterization of a HVPE-LED Grown by Using the Mixed-source Method
A. R. Lee · H. S. Jeon · E. J. Kim · G. S. Lee · J. E. Ok
· D. W. Jo · K. H. Kim · M. Yang · S. N. Yi · H. S. Ahn ∗
Department of Applied Sciences, Korea Maritime University, Busan 606-791
C. R. Cho
Department of Nanomedical Engineering, Pusan National University, Gyeongnam 627-706
S. W. Kim
Department of Physics, Andong National University, Andong, Gyeongbuk 760-749
H. Ha
-511-
CSsol Co. Ltd., Pusan 606-791
(Received 15 March, 2010 : revised 28 April, 2010 : accepted 12 May, 2010)
In this study, we use quaternary InAlGaN layers with various indium compositions that were grown for white LED (light emitting diode) by using the mixed-source HVPE (hydride vapor phase epitaxy) process. The epitaxial structures of the HVPE-LEDs were grown on templated n-GaN (0001) sapphire. The structures of the HVPE-LEDs consisted of a Te-doped n-type GaN layer, an Al(In)GaN active layer, a Mg-doped p-type AlGaN (p-AlGaN:Mg) layer, and a Mg-doped GaN contact layer. The temperature of the source zone and that of the growth zone were 900
·C and 1090
·C, respectively. In order to investigate the changes in the LED characteristics, are varied the amounts of metallic In mixed with Al and Ga in the active source well from 0.1 g to 0.5 g. We investigated the InAlGaN layers to determine the effects of In and Al by means of SEM (scanning electron microscopy), XPS (X-ray photoelectron spectroscopy), EDS (energy dispersive X-ray spectroscopy), EL (electroluminescence). When the In quantity increased, the Al atomic percent decreased in the EDS result for the active layer surface. The EL measurement showed peaks located at 420 nm, 515 nm, and 547 nm. Consequently, we have demonstrated the possibility of fabricating white LEDs without phosphor by using the mixed-source HVPE method.
PACS numbers: 61,46,81.05Ea,81.15.Kk
Keywords: InAlGaN, White LED, HVPE, Mixed-source method.
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