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ŠÆ X ذ q ° ‚ Ç% iP 0 n É ù p § T “ Ó Þ” X ¢ ITO8 ý  ¹ ÅM X ì Ä — ¤V R Ë 4  Ò ÅÊ Ý

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ŠÆ X ذ  q ° ‚ Ç% iP 0 n É ù p § T “ Ó Þ” X ¢ ITO8 ý  ¹ ÅM X ì Ä — ¤V R Ë 4  Ò ÅÊ Ý

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D Gw n ô  Dz D G K € ª œ@ /† < Ɠ §  ” ¸ ì ø ͕ ¸^ ‰ / B N † < Æõ ,  Òí ß – 606-791

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šŠ û BZ 9  · T ] ï B

National Institute for Materials Science, Tsukuba, 305-0044, Japan

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x  @ /† < Ɠ § ’  ™ èF / B N † < Æõ ,  Òí ß – 604-714

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Ù þ

˜d ” # Q: ITO, “ ¦“ : r, · ú š, Û ¼G ' p" f

Improved Electrical Properties due to Pressurized High Temperature Annealing of ITO and Application to Gas Sensors

Jieun Koo · Youngji Cho · Jiho Chang

Department of Nano Semiconductor Engineering, Korea Maritime University, Busan 606-791

Seunghwan Park · Woong Lee

National Institute for Materials Science, Japan, 305-0044

Hyojong Lee

-1069-

(2)

We studied the effect of pressurized high-temperature annealing of ITO films on their electrical properties and application to gas sensors. Low resistivity ITO films were achieved by using pres- surized high-temperature annealing. The electrical properties were investigated by using Hall effect and four probe measurements. The resistivity of the ITO film was decreased from 1.5 × 10

−4

Ω·cm to 1 × 10

−4

Ω·cm by the annealing at a high (600

C) temperature under high pressure (0.2 MPa).

A thermodynamic model was applied to explain the resistivity and the carrier concentration vari- ations. Also, an electron backscatter diffraction image was used to characterize the crystallinity of the ITO films to make it clear that those observations were not caused by improved crystal quality.

The resistivity of the printed ITO powder film decreased from 1.6 kΩ·cm to 294 Ω·cm during the pressurized annealing at high temperature. Finally, the response and the recovery properties of the printed ITO powder films were shown to depend on the properties of the ambient gases, which indicates the possibility of using printed ITO powder films for the fabrication of gas sensor devices.

PACS numbers: 61.72.Cc, 61.72.Ji, 07.07.D

Keywords: ITO, High-temperature annealing, High-pressure, Gas sensor

I. " e  ] Ø

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E-mail: jiho [email protected]



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Fig. 1. (Color online) Schematic diagram of experimental system.



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Fig. 2. (a) Resistivity, (b) carrier concentration of ITO films annealed with/without pressure. at the elevating annealing temperature.

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  H  Ö ¸$ í  o 0 p x ô  Ç Sn complexs  9, Sn·  H € ª œ„    Sn, ´e  H 6 £ §„    e, O

2

  H l ^ ‰ o  ) a í ß –™ è

\

 ¦ _ p ô  Ç  [9]. d ” (1)“ É r Sn complex  \ P  ¢ ¸  H \ 



-t \  _ K   Ö ¸$ í  o÷ &% 3 `  ¦ M :  Ä »„    7 £ x – Ð H o 

#

Q 0 l x • ¸ 7 £ x    H õ & ñ `  ¦ [ O " î “ ¦ e ”  . d ” (2)\ 

"

f_  Sn

2

· O

00a

  H d ” (1)\ " f_   Ö ¸$ í  o 0 p x ô  Ç Sn com- plex _  0 l x • ¸\  ¦ _ p   9, s  Qô  Ç  Ö ¸$ í  o 0 p x ô  Ç Sn0 l x • ¸



 H [Sn]

c

– Ð    · p . ¢ ¸ô  Ç, d ” (3)\ " f_  n“ É r „  ^ ‰ H o 

#

Q 0 l x • ¸\  ¦ _ p  “ ¦, [Sn]

f

  H g Ë >{ 9 + þ A Sn_  0 l x • ¸, T  H “ : r

•

¸, PO

2

  H í ß –™ è ì  r · ú šs  . d ” (3)  H „  ^ ‰ H o # Q 0 l x • ¸

í

ß –™ è ì  r · ú š\     Sn complex  Ö ¸$ í  o÷ &  H & ñ • ¸ ² ú ˜



4 R H o # Q 0 l x • ¸      H õ & ñ `  ¦ [ O " î “ ¦ e ”  . t  ë

ß –, í ß –™ è ì  r · ú šs  ± ú “ É r  â Ä º\   H d ” (3)“ É r d ” (4)ü < ° ú  s  ç ß – é

ß –y    è ­ q à º e ” >   ) a   [8].

n = [Sn]

c

+ [Sn·]f ∼ = [Sn]

A

(4)

d ”

(4)  H í ß –™ è ì  r · ú šs  ± ú “ É r  â Ä º\   H „  ^ ‰ H o # Q 0 l x • ¸

š

¸f ”   Ö ¸$ í  o  ) a Å Ò$ 3  0 l x • ¸\  _ K    & ñ H † d`  ¦ · ú ˜ à º e ”  .



 " f, Fig. 2õ  ° ú  s  “ ¦“ : r \ " f \ P % ƒo \  ¦ ô  Ç  â Ä º, \ P 

%

ƒo  “ : r • ¸ 7 £ x – Ð “   # Œ í ß –™ è ì  r · ú š`  ¦ Á ºr ½ + É Ã º \ O   H › ¸

|

\ " f  H d ” (3)õ  ° ú  s  ITO? / H o # Q 0 l x • ¸ í ß –™ èì  r · ú š _

 7 £ x \     y Œ ™™ è # Œ $ † ½ Ó_  7 £ x – Ð s # Qf ” `  ¦ · ú ˜ à º e ”

 . t ë ß – “ ¦“ : r \ " f · ú š # Œ r « Ñ? / í ß –™ èì  r · ú š`  ¦ ± ú  Æ

Ҁ   d ” (4)\ " fü < ° ú  s   Ö ¸$ í  o  ) a Sn _  0 l x • ¸ ITO_  H  o

# Q 0 l x • ¸\  ¦   & ñ >  ÷ &# Q “ ¦“ : r \ " f• ¸ $ † ½ Ó_  7 £ x \  ¦ }

Œ

•`  ¦ à º e ” 6 £ §`  ¦ · ú ˜ à º e ”  . s \  ¦  r  ô  Ç    S X ‰ “   l  0

A # Œ ITO ~ à Ì} Œ • ? / „   ‚   Å Ò{ 9 `  ¦ : Ÿ x # Œ Sn_   Ö ¸$ í  o

\

 ¦ r & , „  l & h  : £ ¤$ í _     o\  ¦ › ' a ¹ 1 Ï # Œ ˜ Ðl – Ð % i  .

s

  â Ä º \ P % ƒo \  _ ô  Ç ³ ð 1“ É r @ /l · ú š\ " f \ P % ƒo   ) a ì  r

´ ú

˜ ITO ~ à Ì} Œ •õ  · ú š \ P % ƒo   ) a ì  r ´ ú ˜ ITO ~ à Ì} Œ •\  „   \  ¦ Å

Ò{ 9  # Œ ² ú ˜ t   H „  l & h “   : £ ¤$ í    o\  ¦ f . Ë 8 £ ¤& ñ `  ¦ : Ÿ x K

 › ' a ¹ 1 Ïô  Ç   õ s  . · ú š \ P % ƒo   ) a ITO ~ à Ì} Œ •`  ¦ 60ì  r 1 l x î

ß – „   \  ¦ Å Ò{ 9  % i `  ¦  â Ä º, $ † ½ Ó, H o 0 l x • ¸ Õ ªo “ ¦ s 1 l x

•

¸\ " f  H    o\  ¦ ˜ Ðs t  · ú §€ Œ ¤ . s   H ITO ? / Sns  s p  Ø

 æì  r y   Ö ¸$ í  o÷ &# Q „   ‚   Å Ò{ 9 \  _ ô  Ç Sn_   Ö ¸$ í  o & ñ

•

¸ p p † < Ê`  ¦ _ p ô  Ç . t ë ß – @ /l · ú š\ " f \ P % ƒo   ) a ITO ~ à Ì} Œ •_   â Ä º $ † ½ Ós   Œ • t “ ¦, H o # Q 0 l x • ¸ 7 £ x 

% i Ü ¼ 9, s 1 l x • ¸  Œ • t   H    o\  ¦ ˜ Ð% i  . s  Qô  Ç   



o  H · ú ¡\ " f d ” `  ¦ : Ÿ x K  \ V © œ  ) a $ † ½ Ӂ   oü <  © œ6 £ x   H    õ

– Ð, \ P % ƒo  “ : r • ¸ `  ¦  €   í ß –™ è ì  r · ú š_  7 £ x – Ð Sn_ 

 Ö

¸$ í  o t ƒ  ÷ &# Q ITO? / q   Ö ¸$ í  o  ) a  © œI – Ð ” > r F  “ ¦ e ”

6 £ §`  ¦ ˜ Ð# Œï  r  .

Figure 3“ É r ‘ : r ƒ  ½ ¨\ " f  6   x ô  Ç r « Ñ_  EBSD s p  t

s  . Fig. 3(a)  H \ P % ƒo  t  · ú §“ É r r « Ñ, (b)  H @ /l 

· ú

š  © œI \ " f \ P % ƒo ô  Ç r « Ñ, (c)  H · ú š \ P % ƒo ô  Ç r « Ñ s

 . (a)\  q K " f (b)ü < (c)  H \ P % ƒo õ & ñ \  _ K    & ñ

(5)

Fig. 3. (Color online) EBSD image of ITO films. (a) as-received, (b) annealed without pressure, (c) annealed with pressure.

Fig. 4. I-V characteristics of coil-patterned gas sensors fabricated with screening printing of ITO powder. (a) without annealing, (b) annealed without pressure, (c) annealed with pressure. The inset is the image of ITO powder films image.

w n

(grain boundary)_  x 9 • ¸ 7 £ x    H  כ `  ¦ S X ‰ “   ½ + É Ã º

 e ” “ ¦, : £ ¤ y  “ ¦“ : r · ú š`  ¦ ô  Ç \ P % ƒo  r « э  H · ú š t 

· ú

§  H r « ј Ð    & ñ w n _  x 9 • ¸  8 7 £ x ô  Ç  כ `  ¦ S X ‰ “   ½ + É Ã

º e ”  . { 9 ì ø Í& h Ü ¼– Ð é ß –  & ñ  o÷ &t  · ú §  H ~ à Ì} Œ •\ " f_  H  o

# Q[ þ t“ É r s 1 l x €  " f   & ñ w n \ " f_  í ß –ê ø Í\  _ K  $ † ½ Óõ  s

1 l x • ¸ y Œ ™™ è >   ) a  .   " f   & ñ w n _  x 9 • ¸ 7 £ x  ô

 Ç  â Ä º\   H $ † ½ Ós   Œ • | 9   כ `  ¦ \ V © œ ½ + É Ã º e ”   [10].

t ë ß – · ú š \ O s  \ P % ƒo ô  Ç r « э  H   & ñ w n _  x 9 • ¸ 7 £ x

 €  " f $ † ½ Ó ¢ ¸ô  Ç 7 £ x  % i   H X <, s  Qô  Ç   õ   H ITO

?

/_  H o # Q 0 l x • ¸    o $ † ½ Ó    o_  " é ¶ “  e ” `  ¦ r   



 H   õ – Ð ó ø Íé ß –  ) a  .   " f Fig. 2 \ " f [ O " î ô  Ç $ † ½ Ó_ 



  o   & ñ $ í _     oü <  H Á º › ' a ô  Ç H o # Q 0 l x • ¸_     o

\

 _ ô  Ç  כ e ” `  ¦ ˜ Ð# Œï  r  .

Figure 4  H ì  r ´ ú ˜ ITO\  ¦ Û ¼ß ¼ 2 ; á ԏ 2 ;h AZ O Ü ¼– Ð “   W 

#

Œ  ï{ 9 + þ A Û ¼G ' p" f_  $ † ½ Ó    os  .  ï{ 9 + þ A“ É r ½ ¨› ¸ © œ

~ Ã

Ì} Œ •+ þ A\  q K    y Œ ™• ¸\  ¦ Z  }{ 9  à º e ” Ü ¼ , ~ à Ì} Œ •+ þ A\  q K 

Fig. 5. Response and recovery properties of coil- patterned gas sensors fabricated with screening printing of ITO powder under various gas.

"

f $ † ½ Ós  7 £ x  # Œ   y Œ ™• ¸\  ¦  © œ W Ù ¼– Ð ± ú “ É r ™ è $ 

†

½ Ó`  ¦ ½ ¨‰ & ³   H  כ s  € 9 כ ¹  . (a)  H \ P % ƒo „  _ , (b) @ / l

· ú š\ " f \ P % ƒo , (c) · ú š \ P % ƒo   ) a r « Ñs  . \ P % ƒo „   _

 r « Ñ (a)  H 43.9 KΩ·cm _  Z  }“ É r q $ † ½ Ó`  ¦ t  9, @ / l

 ×  æ \ P % ƒo ô  Ç r « Ñ (b)  H 1.6 KΩ·cm $ † ½ ÓÜ ¼– Ð y Œ ™™ è 

%

i Ü ¼ 9, · ú š \ P % ƒo ô  Ç r « Ñ (c)  H \ " f  H 293 Ω·cm $ 

†

½ Ó ° ú כ`  ¦ S X ‰ “   % i  . · ú š \ P % ƒo  „  \  q K  82 %_  y Œ ™

™

èÖ  ¦`  ¦ › ' a ¹ 1 Ï % i  . r « Ñ (c) \ " f % 3 # Q”   $ † ½ ӓ É r ITO ì

 r ^ ‰ ~ à Ì} Œ •+ þ A Û ¼G ' p" f\  › ' a ô  Ç 7 á x A _  ƒ  ½ ¨ [11]\ " f ˜ Ð

“

¦  ) a 600 ∼ 1500 Ω & ñ • ¸_  $ † ½ Óõ  q “ § 0 p x ô  Ç # 3 0 As  9, ì  r ^ ‰ ITO ~ à Ì} Œ •+ þ A Û ¼G ' p" f_   â Ä º\ • ¸ ± ú “ É r $ † ½ Ó\ 

"

f   y Œ ™• ¸ 7 £ x    H  כ Ü ¼– Ð ˜ Г ¦ ÷ &# Q e ” # Q € ª œ  ñô  Ç 1 l x



Œ

•$ í 0 p x`  ¦ \ V © œ½ + É Ã º e ” % 3  .

Figure 5  H  © œ“ : r \ " f Ar, N

2

, O

2

Û ¼\  ¦ y Œ •y Œ • 100 ppmm ”  Å Ò{ 9 Ù þ ¡`  ¦ M :_  Û ¼G ' p" f 6 £ x ² ú š x 9 ¨ 8 Š " é ¶ : £ ¤$ í s  .

z 

´“ : r \ " f Û ¼Å Ò{ 9  Å Òl   H 100 œ í ç ß –  Ü ¼– Ð % i  .  Û

¼ Å Ò{ 9  ) a t & h \ " f Ò'  $ † ½ Ós  7 £ x  # Œ Û ¼ Å Ò{ 9  s

 = å Q è ß – r ç ß – Â Ò   H \ " f $ † ½ Ós  î ß –& ñ ÷ &  H  כ s  › ' a ¹ 1 Ï÷ &% 3 



. s  Qô  Ç 6 £ x ² ú š: £ ¤$ í    o  H ™ è _  1 l x  Œ • “ : r • ¸ z  ´“ : r s 

%

3 Ü ¼Ù ¼– Ð Û ¼ ì  r   ì  r ´ ú ˜ ITO_  { 9  \  f  ¨ ‚ Ã Ì x 9 » 1 ς Ã Ì r

ç ß –s  U  ´# Qt   H  ⠆ ¾ Ó`  ¦ r   “ ¦ e ”   [12].

¢

¸ô  Ç 6 £ x ² ú š : £ ¤$ í “ É r q “ §& h  { 9 & ñ % i ~    כ \  q K , Û ¼ 7

á

x À Ó\      r4 Ÿ ¤ r ç ß –`  ¦   É r  ⠆ ¾ Ó`  ¦ ˜ Ð% i  . s  Qô  Ç  r 4

Ÿ

¤ : £ ¤$ í    o  H ì  r ´ ú ˜ ITO ³ ð€  \  f  ¨ ‚ Ã Ì  ) a l ^ ‰[ þ t _  „  



• 2 ; o• ¸\    É r : £ ¤$ í    o– Ð [ O " î ½ + É Ã º e ” Ü ¼ 9, „   • 2 ;



o• ¸  © œ Z  }“ É r O

2

\ " f  © œ   É r  r4 Ÿ ¤ r ç ß –`  ¦ ˜ Ðs “ ¦,



6 £ § Ü ¼– Ð N

2

,  t } Œ •Ü ¼– Ð Ar Û ¼ í  H Ü ¼– Ð  r4 Ÿ ¤ r ç ß –s  ² ú ˜



f ” `  ¦ S X ‰ “   % i  .

(6)

#

Œ ì  r ´ ú ˜ ITO  ï{ 9 + þ A Û ¼G ' p" f\  ¦ ] j Œ • % i “ ¦, Û ¼ 7 á x À Ó

\

   É r 6 £ x ² ú š x 9  r4 Ÿ ¤ : £ ¤$ í `  ¦ S X ‰ “   # Œ ITO ì  r ´ ú ˜`  ¦ s 6   x

# Œ ç ß –é ß –ô  Ç / B N& ñ `  ¦ : Ÿ x K  € ª œ  ñô  Ç 1 l x  Œ •: £ ¤$ í `  ¦ ° ú   H Û ¼ G '

p" f ½ ¨‰ & ³ 0 p x † < Ê`  ¦ ˜ Ð% i  .

P

c p 8 ý ò k >

‘

: r ƒ  ½ ¨  H & ñ  Ò(“ §¹ ¢ ¤ õ † < Æl Õ ü t  Ò)_  F " é ¶ Ü ¼– Ð ô  Dz D G õ 

†

< ÆF é ß –_  t " é ¶ õ  t d ”  â ] jÂ Ò x 9 & ñ ˜ Ð: Ÿ x’  í ß –\ O ”  < É ª" é ¶ _

 @ /† < Æ ITƒ  ½ ¨G ' p'  t " é ¶  \ O ƒ  ½ ¨   õ – Ð Ã º' Ÿ ÷ &% 3 6 £ § (NRF No.2010-0009828 & NIPA-2011-C1090-1121-001)

Y

c p w Š à U Ø ”  ô

[1] B. Timmer, W. Olthuis and A. Berg, Sens. Actua- tors, B: Chem. 107, 666 (2005).

[2] A. Gurlo, N. Bˆ arsan, M. Ivanovskaya, U. Weimar and W. G¨ opel, Sens. Actuators, B: Chem. 47, 92 (1998).

[5] H. Mbarek, M. Saadoun, B. Bessa¨is, Mater. Sci.

Eng., C 26, 500 (2006).

[6] D. Vincenzia, M.A Butturia, V. Guidib, M. Carot- taa, G. Martinellia, V. Guarnieric, S. Bridac, B.

Margesinc, F. Giacomozzic, M. Zenc, G.U Pig- nateld, A. A Vasilieve and V. Pisliakovf, Sens. Ac- tuators, B: Chem. 77, 95 (2001).

[7] A.C. Huebler, Printed electronics Europe 06, Apr.

(Cambridge, 2006).

[8] I. Elfallal, R. D. Pilington and A. E. Hil, Thin solid Films 23, 303 (1993).

[9] P. A. Cox, Transition Meal oxides (Oxford, 1992), p. 172.

[10] H. Morikawa and M. Fujita, Thin Solid Films 339, 309 (1999).

[11] B. C. Kim, J. Y. Kim, D. D. Lee, J. O. Lim, J. S.

Huh, Sens. Actuators, B: Chem. 89, 180 (2003) [12] J. Yu, B. Huang, Y. Dai, X. Qin, X. Zhang, Z. Wang

and S. Wang, Slid State Sci. 13, 1315 (2011).

수치

Fig. 2. (a) Resistivity, (b) carrier concentration of ITO films annealed with/without pressure
Fig. 5. Response and recovery properties of coil- coil-patterned gas sensors fabricated with screening printing of ITO powder under various gas.

참조

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