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National Institute for Materials Science, Tsukuba, 305-0044, Japan
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Improved Electrical Properties due to Pressurized High Temperature Annealing of ITO and Application to Gas Sensors
Jieun Koo · Youngji Cho · Jiho Chang ∗
Department of Nano Semiconductor Engineering, Korea Maritime University, Busan 606-791
Seunghwan Park · Woong Lee
National Institute for Materials Science, Japan, 305-0044
Hyojong Lee
-1069-
We studied the effect of pressurized high-temperature annealing of ITO films on their electrical properties and application to gas sensors. Low resistivity ITO films were achieved by using pres- surized high-temperature annealing. The electrical properties were investigated by using Hall effect and four probe measurements. The resistivity of the ITO film was decreased from 1.5 × 10
−4Ω·cm to 1 × 10
−4Ω·cm by the annealing at a high (600
◦C) temperature under high pressure (0.2 MPa).
A thermodynamic model was applied to explain the resistivity and the carrier concentration vari- ations. Also, an electron backscatter diffraction image was used to characterize the crystallinity of the ITO films to make it clear that those observations were not caused by improved crystal quality.
The resistivity of the printed ITO powder film decreased from 1.6 kΩ·cm to 294 Ω·cm during the pressurized annealing at high temperature. Finally, the response and the recovery properties of the printed ITO powder films were shown to depend on the properties of the ambient gases, which indicates the possibility of using printed ITO powder films for the fabrication of gas sensor devices.
PACS numbers: 61.72.Cc, 61.72.Ji, 07.07.D
Keywords: ITO, High-temperature annealing, High-pressure, Gas sensor
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