SEMITOP ® 3 IGBT Module
SK30GBB066T
Target Data
Features
#$ " %&
'
Typical Applications*
Remarks
(
) *+++( #,-+.,/
GBB-T
Absolute Maximum Ratings
) 0- 1, 2
Symbol Conditions Values Units
IGBT
(34 5) 0- 1 7++ (
5) /8- 1 ) 0- 1 9+ #
) 8+ 1 */ #
:; :;) 0 7+ #
(!34 < 0+ (
() *7+ (= (!3> 0+ (=
(34? 7++ (
5) /-+ 1 7 @
Inverse Diode
% 5) /8- 1 ) 0- 1 *7 #
) 8+ 1 0A #
%:; %:;) 0 % 7+ #
%4; ) /+ = 2 B 5) /-+ 1 /7+ #
Module
:;4 #
B5 C9+ DDD E/8- 1
C9+ DDD E/0- 1
( #, / D 0-++ (
Characteristics
) 0- 1, 2
Symbol Conditions min. typ. max. Units
IGBT
(!3 (!3) (3, ) +,9* # - -,A 7,- (
34 (!3) + (, (3) (34 5) 0- 1 +,++/7 #
5) /0- 1 #
!34 (3) + (, (!3) 0+ ( 5) 0- 1 *++ #
5) /0- 1 #
(3+ 5) 0- 1 +,F /,/ (
5) /-+ 1 +,A / (
3 (!3) /- ( 5) 0-1 /A,* 0- G
5) /-+1 0A *- G
(3 ) *+ #, (!3) /- ( 5) 0-1 BD /,9- /,A- (
5) /0-1 BD /,7- 0,+- (
/,7* %
(3) 0-, (!3) + ( ) / ;. +,// %
+,+- %
H! (!3)C8(DDDE/-( 08-
09
:!) 0- G () *++( 08
3 I ) 0**- #I@ ) *+# +,F8 J
:!) 0- G 5) /-+ 1 *0A
I ) 0**- #I@ (!3) C8IE/-( -9
3 /,88 J
: 5C ! /,7- KI&
SEMITOP ® 3 IGBT Module
SK30GBB066T
Target Data
Features
#$ " %&
'
Typical Applications*
Remarks
(
) *+++( #,-+.,/
GBB-T
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
(%) (3 %) *+ #= (!3) + ( 5) 0- 1 BD /,9- /,8 (
5) /-+ 1 BD /,9- /,8 (
(%+ 5) 0- 1 / /,/ (
5) /-+ 1 +,F / (
% 5) 0- 1 /- 0+ G
5) /-+ 1 /A 0*,* G
::; %) *+ # 5) /-+ 1 *+ #
H I ) 0**- #I@ /,7 @
3 () *++( +,07 J
: 5C 0,/ KI&
; L 0,0- 0,- '
2 *+
Temperature sensor
:/++ )/++1 :0-)-LG 9F*<-M G
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
SK30GBB066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
