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Growth of Al-doped CdO Thin Films on SiO 2 Layers

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Vol. 64, No. 9, September 2014, pp. 864∼867

New Physics: Sae Mulli, DOI: 10.3938/NPSM.64.864

Growth of Al-doped CdO Thin Films on SiO 2 Layers

Bong Ju Lee · Jin Jeong

Department of Physics, Chosun University, Gwangju 501-759, Korea (Received 7 July 2014 : revised 16 July 2014 : accepted 23 July 2014)

Al-doped CdO thin films with different deposition times have been prepared on SiO

2

layers by using radio-frequency (rf) sputtering technique. The peaks associated with the (111), (200), (220), (311) and (222) planes of the face-centered cubic structure are observed. The films having the preferred orientation changed with the deposition time. The (111) peak intensities decreased with increasing deposition time, which indicates that the crystallinity of the films deteriorates with increasing deposition time. For the S-1, S-2, S-3 and S-4 films, the (200) plane gave the dominant peak. The density of the atoms in the (200) plane was the highest in the FCC structure; therefore, the surface energy of the (200) plane was the lowest. The grain image of the films is seen to bimodal.

The surface morphology, the microstructure, and the defect concentration of the films, as affected by the deposition conditions, suggest that a bimodal grain growth occurs. The surface structure of a thin film is expected to vary in shape due to grain growth during deposition while the interface will have an equilibrium shape during grain growth.

PACS numbers: 68.37.-d, 07.85.Tt

Keywords: Al-CdO, Thin films, X-ray diffraction

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PACS numbers: 68.37.-d, 07.85.Tt Keywords: Al-CdO, ~ à Ì} Œ •, X‚    r] X 

E-mail: [email protected] 864

This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License

(http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any

medium, provided the original work is properly cited.

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Growth of Al-doped CdO Thin Films on SiO

2

Layers – Bong Ju Lee et al. 865

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Table 1. Condition of Al doped CdO Thin Films.

Sample Dept Tem Dept Tim Flow Gas Before Ann (O) (

C) (Min) (O:Ar) (sccm) Time (Hr)

S1 150 1 5:10 1

S2 150 2 5:10 2

S3 150 3 5:10 3

S4 150 4 5:10 4

Fig. 1. (Color online) X-ray diffraction patterns of Al- doped CdO films of S1, S2, S3, and S4 groups.

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866 New Physics: Sae Mulli, Vol. 64, No. 9, September 2014

Fig. 2. Scanning electron microscopy images of the Al-doped CdO thin films: S1, S2, S3, and S4 groups.

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REFERENCES

[1] B. Saha, S. Das and K. K. Chattopadhyay, Sol. En- ergy Mater. Sol. Cell 91, 1692 (2007).

[2] B. Saha, R. Thapa and K. K. Chattopadhyay, Sol.

Energy Mater. Sol. Cell 92, 1077 (2008).

[3] U. Naoyuki, M. Hiroo, H. Hideo and K. Hiroshi, J.

Appl. Phys. 84, 6174 (1998).

(4)

Growth of Al-doped CdO Thin Films on SiO

2

Layers – Bong Ju Lee et al. 867

[4] R. Zhang, P. Chen, Y. Zhang, X. Ma and D. Yang, J. Cryst. Growth 312, 1908 (2010).

[5] J. Jeong and B. J. Lee, J. Nanosci. Nanotechnol. 13, 711 (2013).

[6] J. Jeong, S. P. Choi, K. J. Hong, H. J. Song and J.

S. Park, J. Korean Phys. Soc. 5, 960 (2006).

[7] J. Jeong, D. S. Na, B. J. Lee, H. J. Song and H. G.

Kim, Curr. Appl. Phys. 12, 303 (2012).

[8] M. Sun and J. Jeong, Mater. Sci. Semicond. Process.

16, 1267 (2013).

수치

Table 1. Condition of Al doped CdO Thin Films.
Fig. 2. Scanning electron microscopy images of the Al-doped CdO thin films: S1, S2, S3, and S4 groups.

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