Vol. 64, No. 9, September 2014, pp. 864∼867
New Physics: Sae Mulli, DOI: 10.3938/NPSM.64.864
Growth of Al-doped CdO Thin Films on SiO 2 Layers
Bong Ju Lee · Jin Jeong ∗
Department of Physics, Chosun University, Gwangju 501-759, Korea (Received 7 July 2014 : revised 16 July 2014 : accepted 23 July 2014)
Al-doped CdO thin films with different deposition times have been prepared on SiO
2layers by using radio-frequency (rf) sputtering technique. The peaks associated with the (111), (200), (220), (311) and (222) planes of the face-centered cubic structure are observed. The films having the preferred orientation changed with the deposition time. The (111) peak intensities decreased with increasing deposition time, which indicates that the crystallinity of the films deteriorates with increasing deposition time. For the S-1, S-2, S-3 and S-4 films, the (200) plane gave the dominant peak. The density of the atoms in the (200) plane was the highest in the FCC structure; therefore, the surface energy of the (200) plane was the lowest. The grain image of the films is seen to bimodal.
The surface morphology, the microstructure, and the defect concentration of the films, as affected by the deposition conditions, suggest that a bimodal grain growth occurs. The surface structure of a thin film is expected to vary in shape due to grain growth during deposition while the interface will have an equilibrium shape during grain growth.
PACS numbers: 68.37.-d, 07.85.Tt
Keywords: Al-CdO, Thin films, X-ray diffraction
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PACS numbers: 68.37.-d, 07.85.Tt Keywords: Al-CdO, ~ Ã Ì} , X r] X
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