Design of Amplifier
초고주파공학
조용희
전자파연구실
2
pHEMT amplifier with package
Gain [dB]
Bandwidth [Hz]
Stability: oscillation
Noise figure [dB]: LNA
P1dB [dBm]: PA
Characteristics of active device: bias
Bare chip
Wire bonding vs.
soldering
전자파연구실
4
Bias voltage dependent on the active device
Separation of AC and DC paths
DC blocking capacitor
RF choke, quarter wave transformer
Gain dependent on I, V conditions
Assignment of AC and DC path
전자파연구실
6
Input impedance: S11
Output impedance: S22
Gain: S21
Isolation: S12
Lumped elements (L or C)
Stub matching
Conjugate matching: maximum power transfer
Noise matching: low noise
L *L