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Chapter 7. Design of Amplifier

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로드 중.... (전체 텍스트 보기)

전체 글

(1)

Design of Amplifier

초고주파공학

조용희

(2)

전자파연구실

2

pHEMT amplifier with package

 Gain [dB]

 Bandwidth [Hz]

 Stability: oscillation

 Noise figure [dB]: LNA

 P1dB [dBm]: PA

 Characteristics of active device: bias

Bare chip

(3)

Wire bonding vs.

soldering

(4)

전자파연구실

4

 Bias voltage dependent on the active device

 Separation of AC and DC paths

 DC blocking capacitor

 RF choke, quarter wave transformer

 Gain dependent on I, V conditions

(5)

 Assignment of AC and DC path

(6)

전자파연구실

6

 Input impedance: S11

 Output impedance: S22

 Gain: S21

 Isolation: S12

(7)

 Lumped elements (L or C)

 Stub matching

 Conjugate matching: maximum power transfer

 Noise matching: low noise

 

L *

L

Z

Z

참조

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