Characterization of the Ohmic-contact Properties of an InAs Nanowire by Using the Transmission Line Model

Characterization of the Ohmic-contact Properties of an InAs Nanowire by Using the Transmission Line Model

Min Hyeok Jo · Chan Ho Choi · Jae Cheol Shin

Department of Physics, Yeungnam University, Gyeongsan 38541, Korea (Received 26 June 2015 : revised 17 August 2015 : accepted 17 August 2015)

In this paper, we examined the metal contact resistance of an InAs nanowire by using the trans- mission line model (TLM). The InAs nanowires were grown via a catalyst-free, self-assembled growth method using metal-organic chemical-vapor deposition (MOCVD). The heights of the InAs nanowires exceeded 20 µm, but their diameters were very uniform along the growth axis. The metal contact resistance of the InAs nanowire was dramatically reduced by using a rapid thermal annealing (RTA) process. In a nanowire-based device, minimizing the metal contact resistance is es- sential because of the very small metal-semiconductor contact area. The transmission line model for semiconductor nanowires demonstrated here can contribute to improving the electrical properties of nanowire-based devices.

PACS numbers: 73.40.Cg

Keywords: InAs nanowire, Contact resistance, Transmission line model, Ohmic contact

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PACS numbers: 73.40.Cg

Keywords: InAs
”¸ü<s#Q, ]X8ú¤$†½Ó, Transmission line model, š¸b”]X8ú¤

∗E-mail: [email protected]

This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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