OUTLINE DRAWING & CIRCUIT DI AGRAM
VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(°C)
Min Type Max
UNIT
IT(AV) Mean on-state current 180° half sine wave 50Hz
Single side cooled,Tc=85°C 125 1200 A
IT(RMS) RMS on-state current Single side cooled,Tc =85°C 125 1670 A
VDRM
VRRM
Repetitive peak ff-state voltage Repetitive peak reverse voltage
VDRM&VRRM tp=10ms
VDsM&VRsM= VDRM&VRRM+200V respectively
125 3000 V
IDRM
IRRM Repetitive peak current at VDRM
at VRRM 125 60 mA
ITSM Surge on-state current 21.0 KA
I2t I2T for fusing coordination
10ms half sine wave
VR=60%V RRM 125
1310 A2s*103
VTO Threshold voltage 0.80 V
rT On-state slop resistance 125
0.34
mΩ
VTM Peak on-state voltage ITM=3000A 125 1.75 V
dv/dt Critical rate of rise of off-state
voltage VDM=67%V DRM 125 1500 V/μ s
di/dt Critical rate of rise of on-state current
From 67%VDRM
to 1500A, Gate source 1.5A tr ≤0.5μs Repetitive
125 300 A/μ s
IGT Gate trigger current 50 200 mA
VGT Gate trigger voltage 1.0 3.0 V
IH Holding current
VA=12V, IA=1A 25
50 150 mA
VGD Non-trigger gate voltage At 67%VDRM 125 0.2 V
Rth(j-c) Thermal resistance
Junction to heatsink At 1800 sine, Single side cooled 0.065 °C /W
Viso Isolation voltage 50Hz,R.M.S,t=1min,Iiso:1mA(MAX) 3500 V
Thermal connection torque(M12) 12 N.m
Fm
Mounting torque( M8) 12 N.m
Tstg Stored temperature -40 140 °C
Wt Weight 3400 g
Outline
O
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THYRISTOR MODULE
MTC1200A
Rating and Characteristic
Fig.1 Fig.2
Fig.5 Fig.6
Fig.4 Fig.3
0.065
0 0.02 0.04 0.06 0.08
0.001 0.01 0.1 1 10
time,S
Transient thermal impedance,°C/W
MTC500
0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
100 1000 10000
Instantaneous on-state currant,amperes
Instantaneous on-state voltage,volts
MTC500
0 20 40 60 80 100 120 140
0 500 1000 1500
Mean on-state current,amperes
Case temperure,°C
DC 270 180 120 90 30 60
0 20 40 60 80 100 120 140
0 200 400 600 800 1000
Mean on-state current,amperes
Case temperature,°C
30 60 90 120 180
MTC500
0 100 200 300 400 500 600 700
0 100 200 300 400 500 600 700
Mean on-state current,amperes
Max.on-state dissipation,wates
30 60 90
120 180
270 DC MTC500
0 200 400 600 800
0 100 200 300 400 500 600
Mean on-state current,amperes
Max on-state dissipation,watts
30 60
90 120
180
Max. junction To case Thermai Impedance V s .T ime
360
Conduction Angle
Max. Power Dissipation Vs.Mean On-state Current Max. Power Dissipation Vs.Mean On-state C u rre nt
Conduction Angle 180 0
Max. case Temperature Vs.Mean On-state Current
Conduction Angle 0 180
Max. case Temperature Vs.Mean On-state Current
360
Conduction Angle Peak On-state Voltage Vs.Peak On-state Current
Tj=125°C
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THYRISTOR MODULE
MTC1200A
Rating and Characteristic
Fig.7 Fig.8
Fig.10 Fig.9
0 2 4 6 8 10 12 14 16 18
0 4 8 12 16 20
Gate current,IGT A Gate voltage,VGTV
max.
min.
PGM=100W (100 s pulse)
PG2W
Gate characteristic at 25?Cjunction
t e m p er a tu re 3V,200MA
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0 100 200 300 400
Gate current,IGT mA Gate voltage,VGTV
125癈 25癈
-10癈 -30癈 Gate Trigger Zone at variestemperature 16
2 4 6 8 10 12 14 16 18
1 10 100
Cycles at 50Hz
Total peak half-sine surge current,kA
Surge Current Vs.Cycles 1310
300 500 700 900 1100 1300 1500
1 10
Time,m.seconds Maximum I2t(Kamps2,secs)
I2t Vs.Time
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THYRISTOR MODULE
MTC1200A
Outside Dimension
8.5
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THYRISTOR MODULE
MTC1200A
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