Se Thin Films by Using a Vacuum Evaporation Method and Temperature Dependences of the Physical Properties

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Growth of p-Zn

_0.51

Cd

_0.49

Se Thin Films by Using a Vacuum Evaporation Method and Temperature Dependences of the Physical Properties

Dong Hun Han · Eun Jeong Yoon · Jeoung Ju Lee

^∗

Department of Physics and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701, Korea

Kwang Yong Kang

Institute for Soft and Biomaterials, Changwon National University, Changwon 641-773, Korea (Received 29 April 2015 : revised 18 June 2015 : accepted 19 June 2015)

Zn0.51Cd0.49Se thin films with thicknesses of about 430 nm were deposited on indium-tin-oxide (ITO)-coated glass substrates by using thermal evaporation of high-purity ZnSe and CdSe mixed tablets in high vacuum. X-ray diffraction spectra showed that the Zn0.51Cd0.49Se thin films had mixed ZnSe and CdSe cubic zincblende structures with a lattice constant a = 6.077 ˚A and that the crystals were preferentially grown with a (111) orientation. From the results of X-ray photoelectron spectroscopy, the intensities of the binding energies of the Zn 2p core levels were found to be increased with increasing annealing temperature and those of the Cd 3d and the Se 3d core levels to be decreased. The optical energy band gap of the as-deposited Zn0.51Cd0.49Se thin film was 2.32 eV.

Especially, the optical energy band gaps of Zn0.51Cd0.49Se thin films annealed in a vacuum electric furnace at temperatures from 200^◦C to 500^◦C were about 2.30 eV ∼ 2.08 eV. From measurements of the photoinduced discharge characteristics, the hole drifts in the Zn0.51Cd0.49Se thin films and the hole concentrations were found to increase with increasing annealing temperature but the hole mobilities were found to decrease.

PACS numbers: 81.15.-z, 81.05.Hd

Keywords: Zn0.51Cd0.49Se thin film, Annealing effect, Energy band gap, Surface roughness, PIDC

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This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

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PACS numbers: 81.15.-z, 81.05.Hd

Keywords: Zn0.51Cd0.49Se~ÃÌ}, \%Po ´òõ, \-t { çß, ³ð }9l,FgÄ»l ~½Ó :£¤$í

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Table 1. Measured composition ratio and calculated ‘x’ values for the Zn0.51Cd0.49Se thin films.

ZnSe : CdSe Annealing Composition ratio Calculated ‘x’

compounds temperature (at. %) values

(molar ratio) (^◦C) Zn : Cd : Se ZnxCd1−xSe

as-depositied 25.42 : 24.33 : 50.25 Zn0.51Cd0.49Se 200 24.22 : 25.04 : 50.74 Zn0.49Cd0.51Se

1 : 1 300 24.17 : 24.82 : 50.97 Zn0.49Cd0.51Se

400 24.46 : 24.47 : 51.07 Zn0.5Cd0.5Se

500 20.30 : 29.69 : 50.01 Zn0.41Cd0.59Se

Fig. 1. (Color online) X-ray diffraction patterns of the Zn_0.51Cd_0.49Se thin films for (a) as-deposited sample and annealed samples at (b) 200 ^◦C, (c) 300 ^◦C, (d) 400^◦C, and (e) 500^◦C for 10 min in vacuum: Cubic (•).

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¼Ð, \P%o õ 200^◦C, 300^◦C, 400^◦CÐ \P%oôÇ r

(5)

Fig. 2. (Color online) XPS spectrum of the Zn0.51Cd0.49Se thin films for (a) Zn 2p, (b) Cd 3d and (c) Se 3d core levels.

«

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%

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h

ìr y©¸\¦ >íßôÇ õ Se\¦ ½©or(`¦ M: Zn:Cd

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Fig. 3. (A) FESEM and (B) AFM images of the Zn0.51Cd0.49Se thin films for (a) as-deposited sample and annealed samples at (b) 300^◦C, (c) 400^◦C, and (d) 500

◦C for 10 min in vacuum.

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Fig. 4. (Color online) Optical absorption spectra of the Zn0.51Cd0.49Se thin films. The inset shows the transmis- sion spectra obtained for the Zn0.51Cd0.49Se thin films.

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Fig. 5. (Color online) (a) Oscilloscope trace of the pho- toexcited carrier and (b) dV/dt of the Zn0.51Cd0.49Se thin films.

½

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³

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(7)

Table 2. Calculated values of drift mobility and concentration of charge carrier for the Zn0.51Cd0.49Se thin films.

Calculated ‘x’ Annealing Carrier Carrier Transit

values temperature drift mobility concentration time

ZnxCd1−xSe (^◦C) ( ×10⁻³cm²/V·s) ( ×10¹⁹ /cm³ ) ( µs )

Zn0.51Cd0.49Se as-deposited 1.78 7.31 29

Zn0.49Cd0.51Se 200 1.16 10.2 32

Zn0.49Cd0.51Se 300 0.80 13.1 36

Zn0.5Cd0.5Se 400 0.43 20.31 44

Zn0.41Cd0.59Se 500 3.51 3.84 28

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%i. ¢¸ôÇ ³ðÀÓ s1lx¸ü< îrìøÍ 0xl¸H Óüto

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Ü¼ 9, îrìøÍ_ ÅÒ'rçß tT ü< #Qïr·ú V s

_'a>H

tT =dD

µV (3)

s

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£¤&ñ)a t_Tü< d (3)Ü¼ÐÂÒ' 0.43 µm ¿ºa_ 7£xÃÌ)a Zn0.51Cd0.49Se~ÃÌ}õ 200^◦C, 300^◦C, 400^◦C, 500^◦CÐ

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B

N_ s1lx¸ 12.8 cm²/V·s\ q§÷& 9, Ér°úכ`¦ %3%3

. #l"f îrÍøì 0lx¸_ >íß [39]Ér

n(d, t) = (κ/4πqµ)t⁻¹ (4)

`

¦ s6 x %iÜ¼ 9, κH qÄ»Ö¦Ð"f CdSe éß&ñ_ Ä»

px [40]s Ð¦ôÇ p-+þA Zn_0.7Cd_0.3Se¸\ @/ôÇ ª/BN _

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a Zn0.51Cd0.49Se~ÃÌ}õ 200^◦C ∼ 500^◦CÐ \P%oôÇ

~ Ã

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¼Ð ºúïp ìøÍ¸^\"fü< ° sú p-+þA ¸\¦ ?/H

כ

õ {9uôÇ. ª/BN_ 0lx¸H 400^◦CÐ \P%oôÇ r«Ñ

\

¸^_ îrÍøì 0lx¸H Ô¦íHÓüt_ 0xl¸ü< °ú tëß, 400

◦CÐ \P%oôÇ r«Ñ_ âÄº Ô¦íHÓüt 0lx¸ ÉrâÄº[þt

Ð ß¼. Ô¦íHÓüt 0lx¸ 9þt Äâº\H >h>h Ô¦íHÓüt "é¶

[þt (dopant atoms)s îrìøÍ_ íßêøÍ"é¶s ÷&l M: ë

H\ sÐ K s1lx¸ [41]. "f, 500^◦C

Ð \P%oôÇ âÄº\¦ ]jü@ , 400^◦CÐ \P%oôÇ r«Ñ

\

z´`¦¸ú [O"î ¦ e.

IV. + s Ç Â ] Ø

/BN7£xÃÌ ZOÜ¼Ð ITO lóøÍ 0A\ Zn0.51Cd0.49Se~ÃÌ}

`

¦]j # 10ìr 1lxîß /BNlÐ 5Åq\"f 200^◦C ∼ 500

◦CÐ \P%oôÇ Êê X- r]X>, >~½ÓØ¦ÅÒ &³p

â

, UV-Vis-NIR ìrFg>, X- Fg ìrFg>, "é¶çß§4

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³pâ 8£¤&ñ x9gFÄ»l ~½Ó :£¤$í`¦½¨ôÇ õH6£§ õ

ºH a = 6.077 ˚A &ñ¹¢¤^ $3Fg½¨¸Ð (111) ~½Ó

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\

7£x %i. 8£¤&ñ)a Fg<Æ&h \-t { çßÉr 7

£

xÃÌ)aZn_0.51Cd_0.49Se Ì}Ã~õ 200^◦C ∼ 500^◦CÐ \P% o

ôÇ r«Ñ\ @/ # 2.08 eV ∼ 2.32 eVt %i. Õª o

¦ Zn^0.51Cd0.49Se~ÃÌ}_ ÅÒ'rçßÉr 28 µs ∼ 44 µss

%

3¦, ª/BN³ðÀÓÐ"f p-+þA ¸\¦?/%3. ¢¸ >íß)a

ª/BN_ s1lx¸H 4.30 × 10⁻⁴ cm²/V·s ∼ 3.51 × 10⁻³ cm²/V·ss%3¦, ª/BN_ 0lx¸H 3.84 × 10¹⁹/cm³ ∼ 2.03

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(8)

P

c p 8 ý ò k >

s

K½¨t"é¶q\ _ # Ãº'÷&%3_þvm.

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Se Thin Films by Using a Vacuum Evaporation Method and Temperature Dependences of the Physical Properties

Growth of p-Zn

Cd

Se Thin Films by Using a Vacuum Evaporation Method and Temperature Dependences of the Physical Properties

Dong Hun Han · Eun Jeong Yoon · Jeoung Ju Lee

Kwang Yong Kang

à Ã

Å   « Ö «Y c l0 n É; c 8 ý X ¢ p-Zn

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REFERENCES

Å « Ö «Y c l0 n É; c 8 ý X ¢ p-Zn

Se U c lT c l8 ý V ËX R ê s õ m Í ö n ÚP X ì Ä ¤V R Ë8 ý Æ X Øy ¢8 ýÇ X ØV R Ë

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