Vol. 62, No. 11, November 2012, pp. 1192∼1195
New Physics: Sae Mulli, DOI: 10.3938/NPSM.62.1192
Dissociation and Preferential Adsorption of CaF 2 on Si(114)-2×1
Hidong Kim · Otgonbayar Dugerjav · Jae M. Seo*
Department of Physics and Institute of Photonics and Information Technology, Chonbuk National University, Jeonju 561-756, Korea
(Received 28 September 2012 : revised 12 October 2012 : accepted 26 October 2012)
Using scanning tunneling microscopy, a CaF
2molecule on Si(114)-2×1 held at 500
◦C has been found to dissociate to Ca and F atoms during the initial adsorption stage. The Ca atoms form isolated silicide molecules while the F atoms are desorbed from the surface. For CaF
2coverages up to 0.1 nm in addition to these silicide molecules, a one-dimensional facet composed of CaF(113) and Si(115) planes is formed adjacent to etch pits induced by F atoms. These results imply that F atoms act as an etchant on Si(114) and that CaF is adsorbed selectively on the (113) plane.
PACS numbers: 68.55.J-, 68.35.bg, 73.20.-r, 68.37.Ef
Keywords: Si(114), CaF
2, CaF, Ca silicide, Nanofacet, STM, PES
Si(114)-2×1 »ì Å; c" e CaF 2 8 ý A 0P Ñ ÷ Ò Åy X ì Ä ÿ Y c l
»r ) ò 6 B · Otgonbayar Dugerjav · " k< ' å ∗
· ¡ ¤ @ / < Æ § Ó ü t o < Æõ x 9 F g & ñ Ðl Õ ü t ½ ¨ è, Å Ò 561-756
(2012¸ 9 Z 4 28{ 9 ~ Ã Î6 £ §, 2012¸ 10 Z 4 12{ 9 Ã º& ñ : r ~ Ã Î6 £ §, 2012¸ 10 Z 4 26{ 9 > F S X & ñ )
\ P ) a Si(114)-2×1 l ó ø Í 0 A\ CaF
2\ ¦ f ¨ Ã Ìr ~ ´ â Ä º íl é ß > \ " f H K o ÷ &# Q F H ³ ð \ " f » 1 Ï
Ã
Ì ¦ Ca " é ¶ ë ß ³ ð _ Siõ ì ø Í6 £ x # ¦w n ) a z ´o s × ¼ ì r \ ¦ ë ß × ¼ H כ ` ¦ Å Ò ' V , a A & ³p â
`
¦ s 6 x # í ¦ / B N \ " f ' a ¹ 1 Ï % i . CaF
2_ 7 £ x à Ì| ¾ Ós 0.1 nm\ s Ø Ô s [ þ t Ca z ´o s × ¼ ì
r ü @\ ¸ F\ _ # \ g As { 9 # Q l ó ø Ís s ¦ Õ ª Å Ò0 A\ CaF(113) õ Si(115) Ü ¼ Ð s À
Ò# Q { 9 " é ¶ ¸ J d ± s + þ A$ í ) a H z ´` ¦ S X % i . õ & h Ü ¼ Ð Si(114) 0 A\ " f H CaF
28 £ x s
CaF 8 £ x s f ] X & h Ü ¼ Ð + þ A$ í ÷ &t 3 l w ¦ (113) s + þ A$ í ) a 6 £ § \ CaF 8 £ x s Õ ª 0 A\ $ í © H d` ¦
:
r ½ ¨\ ¦ : x # ½ ©" î % i .
PACS numbers: 68.55.J-, 68.35.bg, 73.20.-r, 68.37.Ef
Keywords: Si(114), CaF
2, CaF, Ca z ´o s × ¼, ¸J d ± , STM
I. " e  ] Ø
/ B
N Ä » ½ + Ë` ¦ ¦ { ç ß s 1.1 eV Ð ì ø Í ¸^ Siõ s
: r ½ + Ë` ¦ ¦ { ç ß s 12.1 eV Ð ] X ^ CaF
2 H ¸
¿
º d { 9 ~ ½ Ó½ ¨ ¸\ ¦ ° ú ¦ e ¦, Õ ª © Ã º z ´ : r \ " f
∗
E-mail: [email protected]
y
y 0.5431 nmü < 0.5462 nms # Q" f 0.6%_ s e [1]. Õ ª QÙ ¼ Ð Si 0 A\ · û ª É r CaF
2} ` ¦ & h 8 £ x$ í © r & ª
| 9
_ ] X } ` ¦ + þ A$ í ½ + É 0 p x$ í s e # Q" f, Si` ¦ l ì ø ÍÜ ¼ Ð
H / B N" î ' V , a A s ¸× ¼ 1 p x _ D h Ðî r è _ l
: r Ó ü t| 9 Ð Å Ò3 l q ~ Ã Î ¦ e [2].
&
³F t _ ½ ¨\ ¦ : x # Si(111) 0 A\ " f H
CaF
2 H > \ " f CaF Ð K o ÷ &# Q Si(111) ³ ð 0 A\ " f
1192
Dissociation and Preferential Adsorption of CaF
2on Si(114)-2×1 – Hidong Kim et al. 1193
1×1 Å Òl \ ¦ t H ª | 9 _ CaF > 8 £ x` ¦ ô Ç 8 £ x + þ A$ í ô Ç
6 £ § CaF
2 9 2 £ § Ü ¼ Ð 8 £ x8 £ x s $ í © ô Ç H z ´s Ð ¦÷ &
#
Q e [3,4]. Õ ª\ ì ø Í # Si(001) 0 A\ " f H Ä º ç H { 9
ô Ç Ca z ´o s × ¼ 8 £ x` ¦ + þ A$ í ô Ç 6 £ § ¸p ' ß ¼l _
-q \ ¦ t ¦ (111) Ü ¼ Ð s À Ò# Q { 9 " é ¶ [ þ t Ð $ í
© ô Ç ¦ Ð ¦÷ &% 3 [5–7]. Õ ªo ¦ Si(110) 0 A\ " f ¸
%
i r (111) Ü ¼ Ð s À Ò# Q { 9 " é ¶ [ þ t Ð $ í © ) a ¦
Ð ¦÷ & ¦ e [8]. s X O > CaF
2(111) s / B N: x& h Ü ¼ Ð
H כ É r s s \ -t © ± ú ¦ CaF
2(001)
s CaF
2(110) É r \ -t © @ /& h Ü ¼ Ð Z } l M :ë H s
[5]. ô Ǽ # , î ß & ñ ) a ¦x 9 Qt à º [ þ t × æ _ Si(5 5 12) É r 1 " é ¶ @ /g A$ í ` ¦ t ¦ é ß { 9 ½ ¨% i Ü ¼ Ð F ½ ¨ ¸
÷
&# Q s 0 A\ CaF
2\ ¦ 7 £ x Ã Ì , \ -t ± ú É r CaF(111)
õ < Êa CaF(113) Ü ¼ Ð s À Ò# Q ¸ J d ± s Si(5 5 12)-2×1 _ ¦Ä » Å Òl 5.35 nm ç ß Ü ¼ Ð { 9 & ñ > + þ A
$ í
) a H r z ´s þ j H Ð ¦÷ &% 3 [9]. s H CaF(113)
¸ CaF(111) ë ß p u \ -t ± ú H z ´` ¦ ´ ú K ï r .
¢
¸ _ î ß & ñ ) a ¦x 9 Qt à º [ þ t × æ _ Si(114)
¸ 1 " é ¶ @ /g A$ í ` ¦ t ¦ é ß { 9 ½ ¨% i Ü ¼ Ð F ½ ¨ ¸÷ & 9, s
³ ð É r s × æ8 £ x(double-layer) Û ¼9 \ ` ¦ (001) Ü ¼
Ð Ò q ty ½ + É Ã º e ¦ © @ /& h Ü ¼ Ð Si(5 5 12) Ð é ß í H
[10]. F ½ ¨ ¸ ) a Si(114)-2×1 É r 1.63 nm _ Å Òl \ ¦ t
¦ e l M :ë H \ { 9 " é ¶ ¸ ½ ¨ ¸^ $ í © \ " f î ß & ñ ) a + þ A ó
ø ÍÜ ¼ Ð 6 x| ¨ c 0 p x$ í ` ¦ ° ú ¦ e # Q ´ ú § É r ½ ¨ ' ÷ &
¦ e [11].
: r ½ ¨\ " f H Si l ó ø Í 0 A\ CaF
2_ & ñ $ í ~ Ã Ì} $ í ©
\
@ /ô Ç t F K t _ õ \ ¦ ½ ÓÜ ¼ Ð Si(114)-2×1 0 A\
"
f CaF
2_ K o ü < × þ & h f ¨ Ã Ì # Â Ò\ ¦ Å Ò ' V , a A & ³ p
â (scanning tunneling microscopy: STM)` ¦ s 6 x # µ
1 ß) ? / ¦ ô Ç .
II. ÷ m Ç ] M ö
Ð 8.0 mm, [ j Ð 3.0 mm, ¿ ºa 1.0 mm _ n+ þ A Si(114) l ó ø Í` ¦ r « Ñ f . Ë 8\ © Ã Ì # l : r · ú § 4 s 9.8
× 10
−11Torr í ¦ / B N(ultrahigh vacuum: UHV) 6 x l
Ð ` | 6 £ §, l ó ø Í\ À Ó\ ¦ f ] X f Ë 9 l ó ø Í : r ¸\ ¦ 650
◦C Ð Ä »t ô Ç G , À Ò 1 l x î ß \ P # r « Ñü < f . Ë 8
\
Â Ò Ã Ì ) a f ¨ Ã Ì Ó ü t| 9 ` ¦ ] j H \ V\ P % o \ ¦ % i . s l
ó ø Í` ¦ 1150
◦C t \ P # í ß o} ` ¦ ] j ¦, 900
◦