Korean Chemical Engineering Research

전체 글

(1)Korean Chem. Eng. Res., Vol. 43, No. 1, February, 2005, pp. 85-91. PET {[

(2) ECR ¤èJà £¿ g»g SnO2 MÐO£ |. ;h* OàG G÷|* Û* ¿\{. †. KhêH,¬õgò ÷ôh õg« ÖQ {g GöË 39-1 Z¬¬HG dHàHê ÖQ K¯g ¤ 72-1 ¸ ö ³ [¤, 2004¸ 11ö 5³ >). 136-791 * 121-791 (2004 8 24. Characteristics of Transparent Conductive Tin Oxide Thin Films on PET Substrate Prepared by ECR-MOCVD Yun Seok Kim*, Bup Ju Jeon, Jeh Beck Ju*, Tae Won Sohn* and Joong Kee Lee† Eco-Nano Technology Research Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Korea *Department of Chemical Engineering, Hongik University, 72-1, Sangsu-dong, Mapo-gu, Seoul 121-791, Korea (Received 24 August 2004; accepted 5 November 2004). ß È. ECR-MOCVDõ «ÄK 5ÆQÑ ·M Ê~ÉL«(CH ) Sn-H -O ~.,GÑ SnO L« fÆæÉ. f Æê ·ML M,JU o à_Ft, MÉ/~ C/,¶ « M-, MÉ MÍ, K«¿³² t, ôQ Ñê ço à_¡¤Ñ ¶ Æ æÉ. K«¿³² tê MÉ MÍÍ ÍWÑ ¶ o M,J I]s ä2 SnO L« æÉ. K «Ë à_¡¤Ë« ôê L HJU Ñ Âj2 o O®Gj ÷

(3) . ECRMOCVDÑ g fÆê L ·êQ ä 2 380-780 nm ÍQ òÑ ÎÎ 93-98%, 0.1-0.5%. ôê L è grain ¿,2 à_¡¤Ñ îªÇ« 20-50 nmp. àk³ ³_G. á õg MJdê ÆQÑ M, JI]o 7.5×10 ohm·cm, ·ê 93%, ä 0.2%õ ä2 L« »´. 3 4. 2. 2. 2. 2. −3. Abstract − SnO2 films were prepared at room temperature under a (CH3)4Sn-H2-O2 atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD (Electron Cyclotron resonance -Metal Organic Chemical Vapor Deposition) system. The electrical properties of the films were investigated as function of process parameters such as deposition time, microwave power, magnetic current power, magnet/showering/substrate distance and working pressure. An increase in microwave power and magnetic current power brought on SnO2 film formation with low electric resistivity. On the other hand, the effects of process parameters described above on optical properties were insignificant in the range of our experimental scope. The transmittance and reflectance of the films prepared by the ECR-MOCVD exhibited their average values of 93-98% at wave length range of 380-780 nm and 0.1-0.5%, respectively. The grain size of the SnO2 films that are also insensitive with the process parameters were in the range of 20-50 nm. On the basis of experimental data obtained in the present study, electrical resistivity of 7.5×10−3 ohm·cm, transmittance of 93%, and reflectance of 0.2% can be taken as optimum values. Key words: Tin Oxide, PET, ECR-MOCVD, Transmittance, Resistivity. 1.. C «. æ2 é02 M Ê, ·êS 4t G2 & Í( ÆQ s OÇgtG

(4) ´ o dHJ 8_ « ®gê[1, 2]. M « âo ·MLs fÊGD .g ä dí, 0 dí, Ý·dís «ÄGñ CdO(cadium oxide), IO(indium oxide), TO(tin oxide), ATO(antimony-doped tin), FTO(fluorine-doped tin oxide), ITO(tin-doped indium oxide), ZnO(zinc oxide) Ù« ÄæÊ Àk , «6K Lê dLËs @dGñ fÊGD G(O, M. M 21§D2 _Ýd¬õ b4 MÉàH ~tÍ èMG

(5) _Ýhé¯ ñ6 Í( ¶ AñS« ÉÍ Êd0ê ¬

(6) Jdõ IJk³ lèGj õgæÊ À. ·MLk³ Ä † To. whom correspondence should be addressed. E-mail: [email protected] 85.

(7) 6õöMH?ö?éö =òö«O,. 86. Ñ2 TO, ZnO Ù ³ ~k³ fÊê ·ML õgÍ lèGj ,}æÊ À[3-12]. é Qo ÞÑ ÄæÊ À2 ITO áLo HJ ·êõ ÊsK MDMÍ Íß Î¤GÊ è³ K s«´ Ê\0 áLs OË ¤ À. K é « âÊ o 5Ñ ô ¤ ÀD AéÑ M HÇ í0Ñ áLs ½Æ ¤ À2 ßYs äÊ Àk÷, {«5 £Ñ K áL k³ I]« Íê2 Y« ÀÊ, ¯³ Äk³ ¯g o fÆÍÍ (JæÊ Àk, «÷ DÑ g j z« æ Ê DªJ ã uK Y« À. «6K ITOÑ WGñ fÆò ÍÍ IGÊ ôÆQs ÆQO A ITO LÑ [G2 Î¤K HJ, MDJ U s ÷2 ZnO áL Î , DÑ íu GÊ DªJ 0 Î¤G( \G[11, 12]. «Ñ Wg SnO (TO) 2 ITOQ WGGñ MDM o ©´(÷ DªJ U « Î ¤G, ùJ, dHJk³ 8_K ßYs Í(Ê À. K, Í òÑ è HJ ·êS« 85% « « æÊ, 5Ñ MD WI]« 10 -10 Ω·cm òÑ Àk , D , DªJ 0« Î¤O O 4n¶ fÆòÍ IGñ ¬

(8) @s .g JYG[13, 14]. 6÷ SnO áLs ·M³ ÄGD .g2 MDMõ 1®Í À. Ok³ · ML íè« ñTK ·-ËD¶s «ÄK Lk³ Míê

(9) DÊ örk³2 A2õ «ÄK örê M ÉD à s «ÄK ECR(electron cyclotron resonance) 5d Hô D¬s «ÄG2 öro âo ª

(10) U s gG2 ör G÷¶Ê 0ê. A2ê ·ML Î í-J¯ örk ³ ôæ´ ÀD AéÑ D¶ê áL [ôt« uGÊ áLê z Yt« uGñ D¶« É? ts çj æ

(11) dHôr Ñ Wg ¬Jk³ ¤« E4(2 éfÍ À´ dHJk³ Y t« âo ECR ñ¶ Kõ «ÄG2 a« ÁêJ«[15, 16]. ³äJk³ o I]ê o ·êSs Í(D .g2 300 C « D¶5Í 1®GD AéÑ £ ,

(12) d, ád, I Í@ ßYs Í, 1ý D¶ Ùo ù « uGñ L fÊ« ÎºG2 éfY« ÀÉk÷ á õgÑ2 ¥ ùs ÍG( :Ê 5Ñ ¤}æD AéÑ ñ¶A Ê~É 1ý¯ PET (polyethylene terephthalate)õ D¶k³ ÄGñ ×s ¤}G. á õgÑ2 «6K ßYs lÄGñ 5Ñ D0ê [ô t« ãGÊ, L« è³G, o @ « À2 ECR-MOCVD (electron cyclotron resonance-metal organic chemical vapor deposition) örk³ KDdYí Mg¯ TMT(tetramethyltin)õ PET D ¶.Ñ )[ dE ,

(13) M, ·êS, ä U « Î¤K SnO ·MLs fÆGÊ áL ßÑ Âj2 K ¡¤Ñ ! ¶ ´¡K MDJ Ú HJ U ¡dõ Ý«2( Æ G. 2. −1. −2. 2. o. 2. 2.. / ð£ Z tà. 2-1. / ð£ Ê~É ¤( .Ñ M s ä2 áLs 5Ñ dH ô ÿD .Gñ ECR-MOCVD ßjõ ÄG. á õgÑ Ä ê × ßjõ Fig. 1Ñ ÷É. äD zÑ .jK MÉ s 0g @ æ2 875 Gauss ÉDßÑ äD MÉË o ³W* ÎÑ g ´¡K ³_K ¡M ,¤³ «Ç³T· (cyclotron) Òs Gj ê. «A, ?²¤ 2.45 GHz K«¿³². ¤@¤ C43× C1 2005 2. Fig. 1. Schematic diagram of ECR-MOCVD system.. Í )Î ²îs 0Gñ äD³ ½ æ

(14) MÉ ¡M ,¤ Q K«¿³² ?²¤Í ³jO Î, ECR ÆQ« ê. ECR òo MÉ §D³ ÆQO ¤ À. «Rj ECR òs 0ê G2 MÉËo àÆQs OÇÿÊ K«¿³²³z o Ñw (õ »´ MDß, ÉDßs !¶ D¶« .jK ô òk³ ½ê. Plasma source³ RR 160 PQE (Roth & Rau Co., Germany) õ ÄG2) K«¿³² M¬to 2 kW, MÉ M¬M Í2 185 A«. Base pressureõ 10 -10 Torr³ K(GD .g N 400 l/sec Ä

(15) s ä2 turbomolecular pump(ATP400 HPC, Alcatel)Q ÝÆ Bé³ 1,000 L/min Ä

(16) s ä2 mechanical pump (TRP-60 pump, Woosung vacuum)Í ¨óJk³ õæ´ À. ECR ñ¶ K ßjÑ [g À2 3í stub 4w2 ä K«¿ ³² §Dõ MdG2) ÄG. ÉDßê ä K«¿³ ² §D2 é s .g MJdæ´t G2), « MJd ör Ñ2 4w MJdQ magnetic MJd & Í( ör« Àk á ×Ñ2 ä K«¿³² §DÍ MÍ æ´ MÉ MÍ õ ³_Gj GÊ 3í 4wõ ÆQGñ HÇ ñ¶ K ÆQÑ ä. K«¿³² §DÍ K«¿³² t 10% «³ K(æ´ ÆQG. ÎÎ äÍA2 MFC(URS100·5, UNIT instrument)³ ?½GÊ SnO Mgõ àGD .Gñ TMT(tetramethyltin, (CH ) Sn)s I5¨h¤Æ(RW-0525G, JEIO TECH)Ñ Ê carrier gas¯ argonk³ bubblingE äD³ K½Z. 2-2. / tà Ê~É ¤( .Ñ d? áLs GD .Gñ Ê~É D¶ k³2 ùJk³ 120 Cb( WGJ 8_J«Ê õ ãK PET (&ÿ 0.1 mm)õ ÄG. á õgÑ2 microwave power, magnetic current power, äD working pressure, ~ CÑ D ¶b( M-Q ôÑs à_¡¤³ ¤}Gñ ôê áL −4. 2. 2. 3 4. o. −5.

(17) HÑ C fÆê SnO ·ML. ECR-CVD. 87. 2. Table 1. Experimental conditions for deposition of SnO2 films on PET substrate prepared by ECR-MOCVD ECR-CVD processing conditions Substrate Base pressure Work pressure Bubbler pressure Deposition temperature Bubbler temperature TMT gas flow rate Ar gas flow rate O2 gas flow rate H2 gas flow rate Microwave power Magnetic current Deposition time. PET 1×10−4 Torr 10-30 mTorr 200 Torr Room temperature −14 oC 0.25 sccm 3 sccm 20 sccm 10 sccm 800-1,600 W 140-170 A 3-20 min. U s oÝIÊ, × ÆQs Table 1Ñ ÷É. äD base pressure =Ñ à_¡¤¥ ÍAõ ?½GÊ microwaveQ magnetic currentõ ¯ÍGñ ECR layerÍ æ

(18) ä ² §Dõ 10% ÂOk³ ÆQK á _g, Ñ Ñ ×s ¤}G. 2-3. Ïh tà fÊê áL ,

(19) morphologyQ L &ÿõ e¯GD .Gñ FE-SEM(field emission scanning electron microscopy)k³ 10O SÑ áL,

(20) grain sizeQ &ÿõ +_G. áL M DJ U s e¯GD .Gñ 4PPM(four-point probe method CMTSR2000N, Mission Peak Optics Inc.)s ÄGÊ WI]o . Ñ gg, ,

(21) I]Ñ L&ÿõ «ÄGñ +_G. fÊê ·MLÑ ¬K ·êQ ä +_o UV-visible spectroscopy system(HP-8453, Agilent)k³ +_Gk +_ ²ß p.2 380-700 nm Í òk³ G. Dá reference2 PET film k³ ÄK +_GÊÉ G2 SnO áLs +_G. 2. 3.. ûG Z +{. `| 5Ñ ECR ñ¶ KÑ g PET D0Ñ ôê SnO áL ,

(22) morphologyQ &ÿ+_s .g 10O e¬g ~K FESEM ,s Fig. 2Ñ ÷É. ôÆQo H /O /TMT PWÍ 1/2/0.025, carrier gas³ Ar 3 sccm, magnetic current power 160 A, microwave power 1600 W, working pressure 20 mtorr ÆQGÑ 5~ 8 ôæÉ. MÉê ~ C « M- 8 cm, ~ Cê D ¶M- 10 cm³ K(GÊ s ¿D2 10 10 cm ³ G. D ¶o MÉDß ¤)ök³ 5 rpmk³ ¡Mÿ base pressureõ 1 10 torr³ ÆQK á O ÆQÑ ô« ,}æÉ. Fig. 2(a) Ñ sF SnO áL ,

(23) morphologyõ +_K ê ôÑ s fK ÆQÑ2 grain sizeÍ 20-50 nm«Ê, áL &ÿ 2 Fig. 2(b)Ñ Ý2 àQ ç« u 140 nm _³ 28 nm/min ôõ ÷'s e¯G. á õg à_¡¤2 ôÑ, microwave power, magnetic current power, magnet/showering/substrate distance, working pressure«. K à_ÆQÑ ôÑs 5~ k³ ³Gj ¤}G

(24) , D¶ê MÉ M-Í ÍtÊ, microwave powerÍ ÍO¤´ ÍG(O à_¡¤¥³ MÊ ·êSê MI 3-1.. 2. 2. 2. 2. −5. X. Fig. 2. SEM images surface and cross-sectional SnO2 film prepared by ECR-MOCVD. (a) Surface morphology of SnO2 film (b) Cross-section of SnO2 film (H2/O2/TMT mole ratio 1/2/0.025, carrier gas Ar 3 sccm, magnetic current power 160A, microwave power 1,600 W, magnet/showering/substrate distance 8/10 cm, working pressure 20 mtorr, deposition time 5 min).. ]« ÷÷2 MJdê ÆQÑ fÊê áL Î &ÿ2 u 140 nm³ ³GÊ grain size2 M ³_Ws < ¤ ÀÉ. · 2 ³äJk³ áL« &âî 0¤´ ÷u,Ê <s Àk÷, K ôÆQÑ fÊê áL &ÿÑ !ñ ·2 Fig. 3Ñ Ý×« D¶« ùd k³ ¡ê 500 nm &ÿ áLs fG

(25) , D¶ ¡« Ç2 p.Ñ2 áL &ÿÍ ·õ _G2 Q ¬J¯ ¯ÉÍ æ( :{s e¯G. Fig. 42 Fig. 2Q ³K Æ QÑ ôê SnO ·Q ä õ +_K êõ ÷ =k³ Í ò¯ 380-780 nm ²ßÑ +_æÉ. +_ ê sK uÑ ó«2 À(O ³äJk³ Ädõ OÇG2 93% « k³ · « âo áL« fÊæÉÊ, ä ò 0.10.5% p. DK êõ ÷Ê À. Fig. 52 Fig. 2Q ³K ÆQÑ PET 1ý.Ñ ôê SnO MQ è³õ e¯GD .Gñ áLs fÊK á 4 PPMk³ +_K ,

(26) I] profiles ÷ É. á ×ÆQÑ »´, áL ,

(27) I]o è 1.4 10 2. X. 3. Korean Chem. Eng. Res., Vol. 43, No. 1, February, 2005.

(28) 6õöMH?ö?éö =òö«O,. 88. Fig. 3. The effects of process parameters described thickness and transmittance for deposition of SnO2 films on PET substrate prepared by ECR-MOCVD (H2/O2/TMT mole ratio 1/2/0.025, carrier gas Ar 3 sccm, deposition time 3-20 min, substrate distance 8-10 cm, magnetic current 140-170 A, microwave power 800-1,600 W, working pressure 10-30 mtorr).. &ÿõ ÊsK MD WI]o 1.98 10 ohm·cmõ ÷ Ék è³2 MÊ 5%³ kÎ è³K L« »´. 3-2. èJ 'O£ Lð ô Ñ ¡dÍ ôê d? ·ML MD WI] ê ·êÑ Âj2 s e¯GD .Gñ á ×s ¤}G . Fig. 2Q ³K ×ÆQÑ ôÑs 3~Ñ 20~ b( 5~ Ñk³ ¡dÿ ×s ¤}G. Fig. 6o Í ò¥(420, 470, 530, 580, 620, 800 nm) · ¡dQ MD WI ] ¡dõ ÷Ê À. ·Ñ YË °« s¤´ è³K as ÷2), ôÑ« 10~ « (æ

(29) · Í kÎ è³Gj ÷÷2 as e¯O ¤ ÀÉÊ, ôÑ« ÍO¤´ ·2 ©´(2 s ÷Ê À. «ak³ O Ñ ¸G×« ·Q M2 äWG2 êõ e¯O ¤ ÀÉ. ôÑ 5~ «GÑ2 WGJ è³K ·õ ÷Ê ÷Ë( so è³K êõ ÷Ê Àk÷, 20~ ôK áL s fG

(30) è ·2 H& 93% « s K(|. ôÑÑ ¬K U o áL« î ðDÑ2 bulkK L« æ´ uÑ o MDI]s ÷Ê «áÑ2 Qo «5ê «5« D¶ k³ ¯d æ´ Yó o ôõ ÷. ôðDÑ2 áL &ÿÍ 90 nmÑ ôÑ« 6´÷

(31) 500 nm³ Í| (O, MD WI]o

(32) « ÍG( :Ê 10~ «á2 ECR ò ê D¶ « potential energy ó«Ñ K êK Ñw( M³ ,

(33) ùd « è@Gñ crack« è@GD AéÑ ·Í ÝG Ê MD WI]« ÍGj ê. «A grain size2 "´-, ½É =(agglomerate)³ g æÊ, 10-60 nm p.Ñ K ¿Dõ ÷, MD WI]o 5~ 8 ôK áL« 1.98 10 ohm·cm ³ Íß DK êõ ÷É. 3-3. ¿·§9 çp£ Lð K«¿³² t ¡dÍ ôê d? ·ML MD ohm/sq,. −2. Fig. 4. Transmittance and reflectance of SnO2 films prepared on PET by ECR-MOCVD. (a) Transmittance (%) (b) Reflectance (%) (H2/O2/TMT mole ratio 1/2/0.025, carrier gas Ar 3 sccm, magnetic current power 160 A, microwave power 1,600 W, magnet/showering/substrate distance 8/10 cm, working pressure 20 mtorr, deposition time 5 min).. −2. ¤@¤ C43× C1 2005 2. Fig. 5. Surface resistance (ohm/sq.) profile of SnO2 film with 10×10 size. (H2/O2/TMT mole ratio 1/2/0.025, carrier gas Ar 3 sccm, magnetic current power 160 A, microwave power 1,600 W, magnet/showering/substrate distance 8/10 cm, working pressure 20 mtorr, deposition time 5 min)..

(34) HÑ C fÆê SnO ·ML. ECR-CVD. Fig. 6. Effect of deposition time on transmittance and resistivity. (H2/ O2/TMT mole ratio 1/2/0.025, carrier gas Ar 3 sccm, magnetic current power 160 A, microwave power 1,600 W, magnet/showering/substrate distance 8/10 cm, working pressure 20 mtorr).. WI]ê ·êÑ Âj2 s e¯GD .Gñ Fig. 2Q ³ K ×ÆQÑ K«¿³² ts ¡dGñ 800 WÑ 1,600 W b( 200 W Ñk³ ×G. Fig. 7Ñ Ý×« K«¿³² t« o 800 WÑ2 ôê L ·Í è 97%³ 4? ´

(35) Ê t« Íg è ·2 Ã ¡d Ç« 90% « s K(G. SEM ~ ê áL grain size2 20-50 nm«Ê &ÿ2 90 nmÑ 140 nm³ ¾ Í|. «A MD WI ]o 800 WÑ 2.8 10 ohm·cm³ WGJ j ÷

(36) k÷, t« ÍO¤´ MD WI]o ¾ ÝGñ 1,600 WÑ2 1.98 10 ohm·cmb( ÝG. Íß âo MDJ áLU s ÷2 1,600 WÑ2 è 95% « o ·êSs ÷ ÉÊ, ä S K 0.5% ÂO Î¤K ä Ss ÷É. «6 K ê2 K«¿³² t §DÍ 0¤´ «5d ÊÍ Í Wê Ñ «5Ë« PET ,

(37) Ñ o Ñw(õ MGñ òlK ,

(38) ä« ,}æÉD Aé«. «6K «K³ ôÍ Í W e¯Gk÷, K«¿³² t« á ×p.Ý 4(j. 89. 2. æ

(39) Ê~ÉD¶ ,

(40) Ñ decomposition reactionê cross-linking ä« ³´÷ ðD h ß .jÍ è³g(Ê _« ßæ2 ê_Ñ ³ ñ Î³ ßGñ ,

(41) Ñ Qo cracks G j æ´ ,

(42) I]« ¿j ÍGj ê. 3-4. Magnetic current power magnet/showering/substrate distance £ Lð MÉ/~ C/D¶ M-¡dQ MÉ §DÍ ôê d ? ·ML MD WI]ê ·êÑ Âj2 s ÷ É. Fig. 2Q ³K ×ÆQÑ MÉ/~ Co 8 cm³ Ê_ GÊ ~ C/D¶ M-õ 8 cmÑ 10 cmb( 1 cm Ñk³ ×GÊ, MÉ §D2 140-170 Ab( 10 A Ñk³ ×G . Fig. 8(a)Ñ ÷û àQ ç« MÉk³z D¶ « M-Í Í bî0¤´ MD WI]o ÝGÊ ·2 M gÑÑ WGJ è ³Gj ÷

(43) . Fig. 8(b)Ñ < ¤ À×« MD WI]o magnetic current powerÍ ÍO A 6.2 10 ohm·cmÑ 1.2 10 ohm·cm b( ÝGÊ ·2 è 95%Ñ 94%b( ÷,. MÉ tà« Ês A2 MÉ/D¶ M-Í Ó´0¤´ «5d Ê −2. −2. −1. −2. Fig. 7. Effect of microwave power on transmittance and resistivity. (H2/O2/TMT mole ratio 1/2/0.025, carrier gas Ar 3 sccm, magnetic current power 160 A, magnet/showering/substrate distance 8/10 cm, working pressure 20 mtorr, deposition time 5 min).. Fig. 8. Effect of substrate distance and magnetic current power on transmittance and resistivity. (a) Magnet/showering/substrate distance (b) Magnetic current power (H2/O2/TMT mole ratio 1/2/0.025, carrier gas Ar 3 sccm, magnetic current power 160 A, microwave power 1,600 W, working pressure 20 mtorr, deposition time 5 min). Korean Chem. Eng. Res., Vol. 43, No. 1, February, 2005.

(44) 6õöMH?ö?éö =òö«O,. 90. Ý³ MDI]« ((O MÉ t« 0¤´ M- to kÎ Ê4,. «6K o K«¿³² t, D¶M-, MÉ t« ÞYJk³ s Âj2 ak³ K«¿³²Q M É t« 0¤´ ECR layerÍ j æ´ « @ê Í bÖ¤´ ÊÊ áL« î ¤ À. ECR « è@G2 875 GaussÑ ECR layer2 H& 3íÍ æ2) MÉ §D Q K«¿³² §DÍ « ò ¿Dõ æÎK. K«¿³²Í Ê_æ´ À2 × ÆQÑ2 MÉ §DÍ Íß Ã ts äj æÊ 8 cm M-Ñ ôê áL Î o Ñw( Êõ ä2 «5ê MÉË«

(45) Ï òlK ,

(46) äs Gj æ´ PET ,

(47) k³ Mê o äÑw(Ñ g MÍ Î¤K L« æ(O ¬Jk³ D¶« ùè G

(48) ·Í uÑ ©´,. ä

(49) ECR layerQ Ó´0¤´ o Ñw(õ äÊ ÀÉ «5Ë « D é£ äk³ Ñw(Í 4 ,

(50) l dÍ òlGj ,}æ( :D AéÑ bulkK L« æ´ ,

(51) I]« Ik, o Ñw( M³ D¶ « J´ ·2 âo L« ê . MJ ÆQo MÉê D¶ « M-2 10 cm, MÉ § D2 160 A³ A³ ·2 95%Ê MD WI]o 1.98 10 ohm·cmõ ÷,. 3-5. (< p£ Lð à_ Ft ¡dÍ ôê d? ·ML MD WI] ê ·êÑ Âj2 s Æ G. Fig. 2Q ³K ×ÆQ Ñ working pressureõ 10 mtorrÑ 30 mtorrb( 5 mtorr Ñ k³ ¡dÿ ×s ¤}G. Fig. 9Ñ Ý×« à_Ft« ÍO¤´ MJk³ è ·Í ê. 10 mtorrQ 15 mtorr à_ÆQÑ2 ²ß òÑ ·êS« è³Gj ÷ ÷(O M è ·ê2 80% « s ÷Ê À´ Ädõ .K ÆQÑ2 OÇG2 êõ ÷,. Ft« ÍO¤´ áL &ÿ2 150 nmÑ 130 nm³ ÝGÊ, grain size2 30-50 nm õ ÷,. á ×Ñ2 à_Ft 10 mtorrÍ Íß âo êõ ÷É2), 10 mtorrÑ 30 mtorr³ Ft ÍÑ !ñ MD W I]o 7.5 10 ohm·cmÑz 1.3 10 ohm·cm³ ÍGÊ ·2 è 93%Ñ 98%b( ÷,. 20 mtorrb(2 K. −2. −3. −1. K êõ ÷Ê À2), « p.õ ´2 FtÑ2 · Q MDI]« Ñ o ÍSs D´GÊ À. «ao 20 mtorr Í ´2 (YÑz2 äDz Ft« l dê «5Ë s f´O ¤ À2 MÉê K«¿³² ts ´D Aé Ñ 8_K ECR Òs G( \G2 «5Ëo D¶Ñ GD M Ñ YDts GD Aé«. äD z Ft« 4(j æ

(52) «5£Ñ K Ñw( s M¬K Ls ¤ ÀÊ ECR k³ ¯K M¬ Ñw(õ äÊ ÒGj æ´ ßÍ k Î }¶(j ê. 6÷ o Ftk³ ¯Gñ PET D¶Ñ ¬ Jk³

(53) Ï o Ñw(õ ( \Gj æ

(54) ùè « è@Gñ crack« è@Gj æ

(55) o ôÑ gGÊ MQ · 2 Ñ IGî ¤ À. 4.. û «. ECR 5dHôäÑ K SnO áL ßk³ ñ¶A ¤( ¡ Ú ùd s MdO ¤ ÀÉÊ à_¡¤ ÆQ³ ,

(56) U f´Í WGJ Ä«G. á õgÑ2 ôÑ, microwave power, magnet current, magnet/showering/substrate « M-, à_Ft Ù à_¡¤Í áLU Ñ Âj2 s Æ. GÊ à_MJdõ 0Gñ ·Q MD WI]« Ñ MJ às ä2 à_ÆQs Æ G. à_¡¤Ñ !ñ · M L U o D¶ê MÉ M-Í ÍtÊ, microwave powerQ magnetic current powerÍ ÍO¤´ áL &ÿÍ ÍG÷, grain size2 30-50 nm³ WGJ ³_G. K, ô Ñ« ÍWÑ !¶ áL &ÿ2 90 nmÑ 500 nm³ ¾ ÍGÊ, grain size2 10-60 nm Ñ Gj ÷

(57) . «A, Î à_ ¡¤ M Ê ·êSê MI]« ÷÷2 MJÆQÑ áL &ÿ2 140 nm ³ ³G. MD WI]o D¶ê MÉ M-Í ÍtÊ, microwave powerQ magnetic current powerÍ ÍO¤´ 4(2 s ÷Ê à_ Fto «5 òlK «Ñ îªG³ o Ft³¤´

(58) Ï o «5d Êõ äD AéÑ MD WI] « 4(2 Áêõ »s ¤ ÀÉ. ·2 áL &ÿÍ · õ _G2 O®K ¯ÉÍ æ( \GÊ D¶ ¡« ³´÷( :2 p.Ñ microwave powerQ magnetic currentÑ g è@K ECR layerÑ !¶ «5d ÊÑ Íß Ã s ç4 _æ á L &ÿÍ ÍO¤´ ·Í 4,2 ³äJ¯ s ! í( :Ê &ÿÑ îªÇ« D¶ ¡« Çk

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