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V
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5nanorod ~ Ã Ì} ` ¦ $ í © r v ¦, $ í © ) a nanorod ~ Ã Ì} _ ½ ¨ ¸& h F g < Æ& h : £ ¤$ í ` ¦ ¸ % i .
SEM õ XRD ¸ õ buffer layer\ ¦ ¶ ú { 9 ô Ç r « Ñ\ ¦ 600
◦C \ " f \ P % o % i ` ¦ M : nanorod_ $ í © s
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1 Ï÷ &% 3 . : £ ¤ y 600
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_ K ¢ - a ë ß ô Ç È Òõ Ö ¦ _ y è: £ ¤$ í ` ¦ Ð% i Ü ¼ 9, buffer layer ¶ ú { 9 ) a ~ Ã Ì} \ " f $ í © ) a nanorod ~ Ã Ì }
_ F g < Æ& h ½ × ¼ Ì s É r 2.28 eV% i .
Ù þ
d # Q: Nanorod, V
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5, RF Û ¼( ' a A, F g < Æ& h : £ ¤$ í
Structural and Optical Properties of V 2 O 5 Nanorod Films
Eunji Oh · Manil Kang · Sok Won Kim ∗
Department of Physics, University of Ulsan, Ulsan 680-749
Hyo Yeol Park
Electronics and Communication Semiconductor Applications, Ulsan College, Ulsan 680-749 (Received 16 February 2011 : revised 15 March 2011 : accepted 27 March 2011)
V
2O
5nanorod films were grown, and the structural and the optical properties of the films were investigated. The results of FE-SEM and XRD investigations showed that the nanorods were well grown when a buffer layer was inserted and the films were post-annealed at 600
◦C. The length and the width of the nanorods were to be found approximately 1000 nm and 140 nm, respectively.
According to transmission spectra, the absorption of the films depended on the variation in the crystalline structure induced by post-annealing, and a shift of the absorption edge was observed.
Particularly, the samples post-annealed at 600
◦C showed a gentle decrease of thd transmittance due increased surface scattering caused by disordered growth of nanorods, and the optical band-gap energy of the nanorod film grown with an inserted buffer layer was 2.28 eV.
PACS numbers: 78.66.J, 61.46
Keywords: Nanorod, V
2O
5, RF sputtering, Optical property
∗
E-mail: [email protected] -362-
Fig. 1. (Color online) Cross-sectional structures of sam- ples; (a) As-grown V
2O
5film and (b) film inserted buffer layer.
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r 1 l x : r ¸ · ú \ " f ¸ Å Ò ± ú É r 0 l x ¸_ Û ¼[ þ t` ¦ y
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: r ½ ¨\ " f H RF Û ¼( ' a AZ O Ü ¼ Ð V
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Table 1. Structures and post-annealing conditions of samples.
Annealing Annealing Sample Structure Temperature Time
(
◦C) (minute) 1 without buffer layer
2 with buffer layer · ·
3 without buffer layer
4 with buffer layer 500
5 without buffer layer 150 6 with buffer layer 600
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