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A Study of Current Crowding and Its Effects on the Carrier Spill-over in InGaN/GaN Blue Light-emitting Diodes

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Vol. 64, No. 11, November 2014, pp. 1054∼1058

A Study of Current Crowding and Its Effects on the Carrier Spill-over in InGaN/GaN Blue Light-emitting Diodes

Hye-Jung Yu · Jin-Gyu Lee · Tae-Soo Kim · Nan-Cho Oh · Jung-Hoon Song

Department of Physics, Kongju National University, Kongju 314-701, Korea (Received 14 July 2014 : revised 4 September 2014 : accepted 4 September 2014)

Because conventional GaN-based light-emitting diodes (LEDs) grown on the sapphire substrates use a mesa structure for current injection, the current flows have both vertical and horizontal components. In these LEDs, the distribution of the current density in the horizontal direction cannot be totally uniform. The nonuniform current flows may cause nonuniform light emission and degrade the external quantum efficiency. This effect is called the current crowding effect. In this study, we analyzed the degree of current crowding and its effects on the carrier spill-over and the resultant external quantum efficiency in InGaN/GaN blue LEDs. A carrier spill-over that was larger by a factor of 1.7 was observed when the current crowding was measured to be 3.1 times lager, which means current crowding enhances the current overflow. We further show that the nonuniform distribution of carriers results in a different external quantum efficiency (EQE) that is a function of the distance from the p-contact edge, which can have a significant effect on the efficiency droop at high current. Although several mechanisms have been suggested to explain the droop, including electron leakage at heterointerfaces, poor hole injection efficiency, indium-rich regions, we show that the current-crowding effect, which increases with increasing current density is one of the major causes of the efficiency droop.

PACS numbers: 61.82.Fk, 64.70.kg, 68.35.bg, 78.55.Cr

Keywords: InGaN/GaN blue light-emitting diodes (LEDs), Current crowding, Corresponding equivalent circuit, Carrier spill-over, Efficiency droop

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Ë] ‚ §; c 6 ” X ¢ Ž ì ŏ Œ

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/ B

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(2014¸   7 Z 4 14{ 9  ~ à Î6 £ §, 2014¸   9 Z 4 4{ 9  à º& ñ ‘ : r ~ à Î6 £ §, 2014¸   9 Z 4 4{ 9  > F  S X ‰& ñ )

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 

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This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License

(http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any

medium, provided the original work is properly cited.

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% 3  .

PACS numbers: 61.82.Fk, 64.70.kg, 68.35.bg, 78.55.Cr

Keywords: InGaN/GaN ' õ AÒ  o µ 1 Ï F g  s š ¸× ¼, „  À Ó õ x 9 , ? /Â Ò 1 p x  r– Ð, î  r ì ø Í   Å g Ë >, “ ¦„  À Ó ´ òÖ  ¦ $  

I. " e  ] Ø

µ

1 Ï F g  s š ¸× ¼ (Light Emitting Diodes: LED)   H ± ú “ É r

„

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p

x ˜ Ð  “ ¦´ òÖ  ¦ µ 1 Ï F g  s š ¸× ¼ › ¸" î Ü ¼– Ð y Œ • F g ~ à Γ ¦ e ” 



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›

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‰

&

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› '

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€

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 8 £ x _  q $ † ½ Ó`  ¦   ? /“ ¦ t n , t p   H n { 9  8 £ x õ  p  { 9

 8 £ x _  ¿ ºa \  ¦    · p . n { 9  8 £ x _  ¿ ºa  p { 9  8 £ x

E-mail: [email protected]

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94 R F g Æ ÒØ  ¦ ´ òÖ  ¦ s  / å L  y  ± ú  t   H ‰ & ³ © œ`  ¦ Ä »µ 1 Ïô  Ç .

Figure 1(b)  H Å Ò{ 9  „  À Ó\    É r B j  ½ ¨› ¸ µ 1 Ï F g  s 

š

¸× ¼_  „  À Ó â ì2 £ § õ  „  À Ó x 9 • ¸s  . „  À Ó õ x 9  ‰ & ³ © œ“ É r Å

Җ Ð p + þ A „  F G  Ò\ " f { 9 # Q >  ÷ &“ ¦, Å Ò{ 9  „  À Ó

&

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L s = s

tn ideal k B T

ρJ o e (1)

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•

¸, n ideal “ É r  s š ¸× ¼ s  © œ> à ºs  .  s š ¸× ¼ s  © œ> à º

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 H 1.05 < n ideal < 1.35 _  ° ú כ`  ¦ ”    [6].

III. ÷ m Ç] M ö U ê s0 n É

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 © œ7 £ x ‚ à ÌZ O  (Metal-Organic Chemical Vapor Deposition:

MOCVD) Ü ¼– Ð   s # Q 0 A\  Si • ¸i ç  ) a 3 µm ¿ ºa \  ¦ ° ú 



 H n-GaN \  ¦ c » ¡ ¤ $ í  © œr (   .  Ö ¸$ í 8 £ x“ É r @ /% i ç ß –F G s  3.4 eV \  -t \  ¦ t   H GaN õ  @ /% i ç ß –F G s  2.6 eV “   In- GaN `  ¦ 5 Å Òl – Ð $ í  © œr †    ×  æ € ª œ Ä ºÓ ü t (Multi Quan- tum Wells: MQWs) ½ ¨› ¸s  . Mg • ¸i ç  ) a 20 nm AlGaN

„

   é ß – 8 £ x (Electron Blocking Layer: EBL) `  ¦  ×  æ € ª œ



Ä ºÓ ü t ½ ¨› ¸ 0 A\  $ í  © œr v “ ¦ 170 nm p-GaN `  ¦ $ í  © œr 

(3)

Fig. 1. (Color online) (a) Corresponding equivalent cir- cuit of the LED mesa structure (b) Current density dis- tribution at high, medium, and low current normalized to the initial current density for device with lateral in- jection geometry.

Fig. 2. (Color online) Schematic diagram of the carrier spill-over measurement.

( 

 . } 9 _   s Ý ¼  H 442 µm × 183 µm s  . ‘ : r  7 Hë  H \ 

"

f  6   x ô  Ç r « Ñ J ‡   n  “  “ É r „  À Ó õ x 9  ‰ & ³ © œ_  S X ‰ƒ  ô  Ç

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× þ

˜ % i  .

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. # Œl  F g " é ¶ Ü ¼– Ѝ  H InGaN _  @ /% i ç ß –F G ˜ Ð  ß ¼“ ¦ GaN _

 @ /% i ç ß –F G ˜ Ð   Œ •“ É r \  -t “   3.06 eV _  DPSS (Diode Pump Solid State) Y Us $ \  ¦  6   x # Œ š ¸f ”  € ª œ Ä ºÓ ü t \ 

Fig. 3. Experimental result and calculated by theory of emission intensity.

ë

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· ú

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„

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(4)

Table 1. Current spreading length obtained by fitting at 10 mA, 30 mA, 75 mA.

Current 10 mA 30 mA 75 mA Current spreading length 200 µm 95 µm 52 µm

Fig. 4. (Color online) Experimental result of current crowding at 10 mA, 30 mA, 75 mA.

½

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+ É Ã º e ”   H î  r ì ø Í _  € ª œ“ É r ô  Ç& ñ ÷ &# Q e ” t ë ß – Å Ò{ 9  „  À Ó

\

   É r 0 Au  1, 2\ " f „  À Ó x 9 • ¸    o > í ß – ° ú כ`  ¦    · p Fig. 5(b)\  ¦ ˜ Ѐ   0 Au & h  Å Ò{ 9  „  À Ó Ô  ¦ç  H+ þ A\  _  # Œ 1 l x { 9

ô  Ç „  À Ó\  ¦ Å Ò{ 9 ½ + É M : 0 Au & h Ü ¼– Ð   É r „  À Ó x 9 • ¸ ° ú כ`  ¦

t >   ) a  .   " f 1 l x{ 9 ô  Ç „  À Ó\  ¦ Å Ò{ 9 K Å Ò 8 • ¸ 0 A u

& h  Å Ò{ 9  „  À Ó Ô  ¦ç  H+ þ As  0 Au \     Õ ª € ª œ˜ Ð  õ • ¸ô  Ç î

 r ì ø Í  € ª œ Ä ºÓ ü t \  Å Ò{ 9 ÷ &>  ÷ &# Q  8 ´ ú §“ É r î  r ì ø Í   Å  g Ë

>`  ¦ µ 1 ÏÒ q tr ~  ´ à º e ” “ ¦, € ª œ Ä ºÓ ü t \   8 & h “ É r € ª œ_  î  r ì ø Í



 Å Ò{ 9 ÷ &# Q  8 & h “ É r î  r ì ø Í   Å g Ë >`  ¦ µ 1 ÏÒ q tr ~  ´ à º e ”   H

Fig. 5. (Color online) (a) Experimental result of carrier spill-over as a function of injection current on a position 1 and position 2 (b) Calculated by theory current density as a function of injection current density on a position 1 and position 2.

Fig. 6. (Color online) (a) Experimental result of EQE as a function of injection current on a position 1 and position 2 (b) Difference between the real and measured current density depending on position (c) Experimental result of Laser on-off.

 כ

s  . s  Qô  Ç " é ¶ “   M :ë  H \  0 Au \       É r î  r ì ø Í   Å  g Ë

>s    É r ° ú כ`  ¦ t >   ) a  .

Figure 6(a)  H 0 Au \    É r ü @ Ҁ ª œ ´ òÖ  ¦ s  . „  À Ó õ  x 9

s   H 0 Au  2 0 Au  1˜ Ð  ü @ Ҁ ª œ ´ òÖ  ¦ s  ß ¼>     z

Œ

¤ . Õ ªX O  €   z  ´] j– Ð „  À Ó õ x 9 s   8 a % ~“ É r ü @ Ҁ ª œ ´ ò Ö

 ¦`  ¦ ë ß –× ¼  H  כ “  ?  m  . Å Ò{ 9  „  À Ó 7 £ x  >  ÷ &

€

  p „  F G Â Ò   H \ " f Y O # Q| 9 à º2 Ÿ ¤ „  À Ó x 9 • ¸ s   H ß ¼> 



  >   ) a  . Õ ª Q  ‘ : r ƒ  ½ ¨\ " f z  ´] j 8 £ ¤& ñ ô  Ç ü @ Ҁ ª œ



´ òÖ  ¦“ É r 0 Au \          H Å Ò{ 9  „  À Ó\  ¦ “ ¦ 9 t  3 l w ô

 Ç . z  ´] j „  À Ó õ x 9  ‰ & ³ © œs       H  כ `  ¦ “ ¦ 9K " f 0 A u

\    É r „  À Ó x 9 • ¸ ° ú כü < z  ´+ « >& h Ü ¼– Ð “ ¦ 9÷ &# Q”   0 Au 

\

   É r „  À Ó x 9 • ¸ ° ú כ`  ¦    · p Fig. 6(b)\  ¦ ˜ Ѐ  , p „   F

G Â Ò   H \ " f  î  r „  À Ó õ x 9 s  d ” ô  Ç / B M“ É r ü @ Ҁ ª œ ´ ò

(5)

Ö

 ¦`  ¦ 8 £ ¤& ñ ½ + É M : “ ¦ 9K ï  r Å Ò{ 9  „  À Ә Ð  z  ´] j– Ѝ  H  8 ´ ú §

“ É

r „  À Ó Å Ò{ 9 ÷ &“ ¦ e ”   H  כ s “ ¦ „  À Ó õ x 9 s   Œ •“ É r / B M s 

“

¦ 9K ï  r Å Ò{ 9  „  À Ó ˜ Ð   8  Œ •“ É r „  À Ó Å Ò{ 9 ÷ &“ ¦ e ”   H

 כ

s  .  6 £ §“ É r ü @ Ҁ ª œ ´ òÖ  ¦ _  d ” “ É r

η ext = P/(hν)

I/e = η int η extraction (3)

s

 . ü @ Ҁ ª œ ´ òÖ  ¦“ É r ? / Ҁ ª œ ´ òÖ  ¦ õ  F g Æ ÒØ  ¦ ´ òÖ  ¦ (light extraction efficiency) _  Y  L Ü ¼– Ð   è ­ q à º e ”   H X <, Fig. 6(c)  H Laser on-off z  ´+ « >Ü ¼– Ð" f  © œ@ /& h “   ? / Ҁ ª œ 

´

òÖ  ¦`  ¦    · p . z  ´] j 8 £ ¤& ñ  ) a ? / Ҁ ª œ ´ òÖ  ¦ (Internal Quantum Efficiency: IQE) _  Õ ªA á Ԗ Ð „  À Ó\     Õ ª

° ú

כs    É r ° ú כ`  ¦ t   H  כ `  ¦ · ú ˜ à º e ”  . z  ´] j& h Ü ¼– Ð ° ú  

“ É

r „  À Ó x 9 • ¸     ¿ º t & h \ " f “ ¦ 9K     H ? / Ҁ ª œ



´ òÖ  ¦ s    É r ° ú כ`  ¦ t t ë ß – z  ´+ « >\ " f  H “ ¦ 9÷ &t  · ú §

€

Œ

¤l  M :ë  H \  z  ´+ « >   õ \ " f s  Qô  Ç   õ    z Œ ¤“ ¦ z  ´ ]

j “ ¦ 9K Å Ò# Q    H ? / Ҁ ª œ ´ òÖ  ¦ õ  z  ´+ « >\ " f “ ¦ 9

 )

a ? / Ҁ ª œ ´ òÖ  ¦ _  s   H “ ¦„  À Ӗ Ð ° ú ˜Ã º2 Ÿ ¤ d ” K t   H 0

Au & h  Å Ò{ 9  Ô  ¦ç  H+ þ A\  : £ ¤$ í \  _ K " f “ ¦„  À Ӗ Ð ° ú ˜Ã º2 Ÿ ¤ d ”

 o  ) a  . „  À Ó x 9 • ¸\    É r ? / Ҁ ª œ ´ òÖ  ¦ _  ° ú כ`  ¦ “ ¦ 9

# Œ ü @ Ҁ ª œ ´ òÖ  ¦`  ¦ ½ ¨ô  Ç €   „  À Ó õ x 9 s  d ” ô  Ç 0 Au 

\

" f ü @ Ҁ ª œ ´ òÖ  ¦“ É r  8 d ” ô  Ç “ ¦„  À Ó ´ òÖ  ¦ $  \  ¦ Õ ªo 

“

¦ „  À Ó õ x 9 s  €  •ô  Ç 0 Au \ " f_  ü @ Ҁ ª œ ´ òÖ  ¦“ É r  8 ¢ - a ë

ß –ô  Ç l Ö  ¦ l _  “ ¦„  À Ó ´ òÖ  ¦ $  \  ¦ t >  | ¨ c  כ s  .

‰

&

³F  0 Au & h  Å Ò{ 9  Ô  ¦ç  H+ þ As  “ ¦„  À Ó ´ òÖ  ¦ $  \  \ O   

 H % ò † ¾ Ó`  ¦ p u >  | ¨ c  כ “  t \  @ /ô  Ç  [ jô  Ç ƒ  ½ ¨  H > 5 Å q

”

 ' Ÿ  ×  æ \  e ”  .

V. + s Ç Â ] Ø

‘

: r ƒ  ½ ¨\ " f  H „  À Ó õ x 9 _  & ñ • ¸\  ¦ 8 £ ¤& ñ ½ + É Ã º e ”   H ½ ¨

»

¡

¤ > \  ¦  º   % i “ ¦ 0 Au \    É r î  r ì ø Í   Å g Ë >õ  ü @ Ҁ ª œ



´ òÖ  ¦`  ¦ & ñ | ¾ Ó& h Ü ¼– Ð 8 £ ¤& ñ % i  . ¢ ¸ô  Ç InGaN/GaN ' õ A Ò 

o µ 1 Ï F g  s š ¸× ¼\ " f „  À Ó õ x 9  ‰ & ³ © œs  î  r ì ø Í   Å g Ë >õ  ü

@ Ҁ ª œ ´ òÖ  ¦ \  p u   H % ò † ¾ Ó\  @ / # Œ ƒ  ½ ¨ % i  . „   À

Ó õ x 9  ‰ & ³ © œs  3.1 C   H 0 Au \ " f 1.7 C   8  H î  r ì ø Í 

 Å

g Ë >s  › ' a8 £ ¤ ÷ &% 3  . s \  „  À Ó õ x 9  ‰ & ³ © œ“ É r î  r ì ø Í  ’ < H z 

´`  ¦ Ä »µ 1 Ï   H  כ `  ¦ · ú ˜ à º e ” % 3 “ ¦, ÷  r ë ß –  m   0 Au & h 

“

  î  r ì ø Í  Å Ò{ 9  Ô  ¦ç  H+ þ As  0 Au & h Ü ¼– Ð   É r ? / Ҁ ª œ ´ ò Ö

 ¦`  ¦ œ íA  # Œ z  ´] j ™ è \  “ ¦„  À Ó ´ òÖ  ¦ $  – Ð s # Qt 



 H  כ `  ¦ ˜ Ð{ 9  à º e ” % 3  . “ ¦„  À Ó ´ òÖ  ¦ $  \  % ò † ¾ Ó`  ¦ p  u

  H כ ¹“  Ü ¼– Ѝ  H „  À Ó ¾ º[ O  [7–11], & ñ / B N _  Å Ò{ 9  ´ òÖ  ¦ y Œ ™

™

è [12–15], “  ´ o u ² D G ™ è o [16] 1 p x s  · ú ˜ 94 R e ” t ë ß –, „  À Ó x 9

• ¸ 7 £ x ½ + Éà º2 Ÿ ¤  8  H % ò † ¾ Ó`  ¦ ~ à ΍  H „  À Ó õ x 9  ¢ ¸ô  Ç Á º r

½ + É Ã º \ O `  ¦ ë ß –  p u “ ¦„  À Ó ´ òÖ  ¦ y Œ ™™ è\  B Ä º ×  æ כ ¹ô  Ç l 

#

Œ\  ¦ “ ¦ e ” 6 £ §`  ¦ ˜ Ð{ 9  à º e ” % 3  .

REFERENCES

[1] X. Guo and E. F. Schubert, J. Appl. Phys. 90, 8 (2001).

[2] X. Guo and E. F. Schubert, Appl. Phys. Lett. 78, 21 (2001).

[3] H. Kim, J.-M. Lee, C. Huh, S.-W. Kim and D.-J.

Kim et al., Appl. Phys. Lett. 77, 1903 (2000).

[4] S. Hwang and J. Shim, IEEE Trans. Electron De- vices 55, 5 (2008).

[5] C.-K. Li and Y.-R. Wu, IEEE Trans. Electron De- vices 59, 2 (2012).

[6] E. F. Schubert, Light Emitting Diodes (Cambridge University Press, Cambridge, 2003).

[7] B.-J. Ahn, T.-S. Kim, Y. Dong, M.-T. Hong and J.- H. Song et al., Appl. Phys. Lett. 100, 031905 (2012).

[8] A. E. Yunovich, V. E. Kudrtashov, A. N. Turkin, A.

Kovalev and F. Manyakhin, MRS Internet J. Nitride Semicond. Res. 3, 44 (1998).

[9] I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson and M. J. Kappers et al., Appl. Phys. Lett. 82, 2755 (2003).

[10] I. V. Rozhansk and D. A. Zakheim, Phys. Status Solidi C 3, 2160 (2006).

[11] I. V. Rozhansk and D. A. Zakheim, Phys. Status Solidi A 204, 227 (2007).

[12] C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang and W. T. Chang et al., Appl. Phys. Lett. 97, 261103 (2010).

[13] S. H. Han, D. Y. Lee, S. J. Lee, C. Y. Cho and M. K.

Kwon et al., Appl. Phys. Lett. 94, 231123 (2009).

[14] J. Xie, X. Ni, Q. Fan, R. Shimada and ¨ U. ¨ Ozg¨ ur et al., Appl. Phys. Lett. 93, 121107 (2008).

[15] H. Jimi, T. Inada and K. Fujiwara, Phys. Status Solidi (RRL) 2, 50 (2008).

[16] T. Mukai, M. Yamada and S. Nakamura, Jpn. J.

Appl. Phys. 38, 3976 (1999).

수치

Fig. 3. Experimental result and calculated by theory of emission intensity. ëß – îr ìø Í  Òq t$í ÷ &amp;&gt;  
 %i  
Table 1. Current spreading length obtained by fitting at 10 mA, 30 mA, 75 mA.

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