NANOTECHNOLOGY
2008. 3. 13 (목) 이 길 선
나노 기술 (Nano Technology) ( gy)
“나노미터(1nm = 1x10-9 m : 10억분의 1미터) 크기의 물질을 조작하고 제어하는 기술”
조작하고 제어하는 기술
나노: 그리스어로 난쟁이를 의미함
사람 적혈구 DNA 원자
백두산
지구 핀 머리
m nm
(1/십억) μm
(1/백만) mm
(1/천)
km
(천) 10
3km
(백만) (1)
나노기술의 응용
재미있는 나노 현상
크기에 따라 색깔이 바뀌는 나노입자
재미있는 나노 현상
합성조건에 따른 다양한 모양의 나노입자
춤추는 자성액체: 콜로이드 상태의 액체 자석
(지름 수십 f 로 안정화 $100/ )
(지름 : 수십 nm, surfactant로 안정화, >$100/g)
나노기술역사
Si(111)-7x7
f u
Si(111)-7x7
5 nm
나노 크기를 어떻게 관찰하는가
?
주사형 터널 현미경
(STM)
전자현미경
여러가지 표면의 원자 배열
8x8 silicon nitride / Si(111)
f u
Si(111)-7x7 Sb/Si(111)- 3x 3
5 nm
5 3x5 3
Sb/Si(111) Sb/Si(111)-2x1 Si(100)-2x1
-
전자의 터널링 전자의 터널링
도체 절연체 도체
분자 주판 단분자의 합성
C
60on stepped Cu surface
Fe(CO)
2작은 것으로부터 나노크기로 (Bottom-up 방식)
E l Q t C l Example: Quantum Corral
D Ei l IBM
(1) STM manipulation (2) Visualization
of the spatial
D. Eigler, IBMof the spatial distribution of certain quantum states of the
states of the corral
• Surface state electrons on Cu(111) were confined to closed
• Surface state electrons on Cu(111) were confined to closed structures (corrals) defined by barriers built from Fe datoms.
• A circular corral of radius 71.3 Angstrom was constructed in
this way out of 48 Fe adatoms.
Atomic Manipulation by STM
Iron on Copper (111):
Circular corral
radius= 71 3 A radius= 71.3 A 48 Fe atomsQuantum-mechanical Quantum mechanical interference patterns
M.F. Crommie, C.P. Lutz, D.M. Eigler. Science 262, 218-220 (1993).
전자의 파동성 : STM 이미지
48 Fe atoms on Cu(111) ( )
STM Manipulation of Atoms and Molecules STM Manipulation of Atoms and Molecules
Xenon/Ni(110) Xenon/Ni(110)
Iron/Cu(111) CO/Pt(111)
Atomic Force Microscope (AFM) and Lateral Force Microscope (LFM)
Photodiode L
Piezo ~
Laser
Feedback and x,y,z Scan
Control
Image
Control
x,y,z Piezo Drum Scanner
Topography, LFM, etc.
×500 ×20000
< Microscope image > < FE-SEM image >
단분자의 정렬 모양 : AFM 이미지 단분자의 정렬 모양 : AFM 이미지
Molecular Images of Au (111) and ODT on Au/mica
Topography FFT filtered image Spacing
Au (111) 2 9 Å
Au (111) 2.9 Å
2 5 Å 2 5 Å
5.0 Å
ODT 5.0 Å
ODT
on Au/mica Au (111)
4 0 Å 4 0 Å
나노기술의 기술적 접근
□ T d 방식
□ Top-down 방식
▶ 나노미터 수준의 가공을 통해 나노미터크기의 구조체를 인공적 으로 형성하는 기술 (거시적 → 미시적, 일반적인 반도체 공정)
□ Bottom-up 방식 p
물질의 최소 단위인 원자나 분자를 자유자재로 조작하여 원하는
기능 구조체를 형성하는 기술(미시적 → 거시적 예를 들면 레고처럼
기능, 구조체를 형성하는 기술(미시적 → 거시적, 예를 들면 레고처럼
각 조각을 조립하여 전체를 만드는 경우)
( )
Dip Pen Lithography (DPN)
Dip-pen nanolithography의 개념
□ Mirkin박사는 AFM측정에서 극복해야 할 단점인 대기 중의 물분자의 기판으로의 이동을 이용하여 코팅하고자 하는 물질을 물과 함께 이동가능성을 생각
Fountain pen AFM tip을 이용한 물질전달 개념도
□ 만년필과 DPN의 비교
Fountain pen
DPN Fountain pen
AFM tip Nib (end part of pen) Solid substrate Paper
Solid substrate Paper
Molecules Ink
Dip Pen Nanolithography (DPN)
Invention of DPN
• Capillary forces between the AFM tip and the sample → Difficult to achieve molecular resolution in air (water condensation)
Mirkin at el, Science, 283, 1999.
Advantages
Key Factors of DPN Resolution
• The grain size of substrate
Advantages
• Positive patterning
• Delivery of different types of
• Interaction between molecules and substrate
• The tip-substrate contact time and the scan speed
• Relative humidity
molecules at specific sites
• Not resist, stamp, complicated processing
Si l i i ( l AFM)
Relative humidity
• Simple instrumentation (general AFM)
Examples of Direct Nanopatterns by DPN (Mirkin’s group)
Au (111)
Amorphous Au Au (111) Amorphous Au
Amorphous Au Amorphous Au
HMDS (hexamethyldisilazane) : (Hy 33C)33-Si-NH-Si-(CH33)
On Oxide surfaces
Amorphous Au
Nanofabrication: Dip Pen Nanolithography
Nanofabrication: Dip Pen Nanolithography
S. Hong and C.A. Mirkin, Northwestern Univ.
Multiple DPN - 8
Protein Detection using DPN
Multiple DPN - 55000
8773 dots
Electrochemical DPN (Liu’s group)
Ag, Ge, Pd, Cu nanowires Au nanowires
Lith h Lithography
Photolithography Photolithography E-beam lithography
Microcontact Printing (uCP) Microcontact Printing (uCP)
Imprinting
Image Display Using Immobilized Vesicles
Immobilized diacetylene liposome
glass substrate
254 nm UV exposure
mask
+ polymerization
p
M k P tt
p y
on exposed areas
Heating at 100 oC
Mask Pattern
blue-to-red color transition
Observe pattern with a fluorescence microscope
Patterned Polydiacetylene Image
Nano-meter spacing electrode fabrication p g
SiO / Si wafer
Resist coating PMMA 950K C2 SiO
2/ Si wafer
SiO
2thickness: 200 nm
PMMA 950K C2 Thickness: 80 nm
e-beam lithography
& develop PMMA
Metallization
5 nm Ti/10 nm Au Nano pattern
Channel width: 20 nm
thermal evaporation
& lift off
iQUIPS Korea Univ.
Photo & E-beam Lithography Process
PMMA spin coating PR spin coating
E-beam Lithography Photo Lithography
PMMA spin coating (thickness: ~100 nm ) PR spin coating
(thickness: ~1 μm ) UV or laser exposure
iti ith k
e-beam exposure di t iti
development development
wafer PR mask
writing with mask direct writing
metallization lift-off
metallization lift-off
mask PMMA
exposed area metal
lift off lift off
• resist: photo sensitive polymer
• light source: UV or ArF laser
• resist: PMMA
• light source: e beam
• light source: UV or ArF laser
• critical size: ~100 nm
• light source: e-beam
• critical size: <10 nm
PMMA (polymethylmethacrylate)
Nano Pattern Fabrication Process
(Dr. Hwang, iQUIPS, Seoul University)
( g Q y)
E-beam lithography for nano pattern fabrication
Photo lithography for pad pattern fabrication
SEM Images of Typical Nano-Electrode
(Dr H ang iQUIPS Seo l Uni ersit ) (Dr. Hwang, iQUIPS, Seoul University)
FE-SEM and AFM Images of Nanoelectrode
7 5 0 n m 1 0 0 0 n m
E-beam patterning examples p g p
D l tt
Develop pattern Line width/spacing 1. 200 nm/300 nm 2. 100 nm/400 nm 3 50 /450
1
2
3 4 3. 50 nm/450 nm D l tt
4. 100 nm/100 nm 5. 50 nm/50 nm
4 5 Develop pattern
Line width/spacing 20 nm/180 nm
Liftoff pattern
Liftoff pattern Liftoff pattern
Line width/spacing 50 nm/50 nm
Liftoff pattern 6 um diameter 150 nm line width
iQUIPS Korea Univ.
세상에서 가장 작은 기타: 전자빔 식각 방 법
Self-assembled monolayer (SAM) and μCP
▲ LFM images of a gold surface patterned with SAMs terminated in different head groups.
▲ SEM images of test patterns on layers of silver (A, B, C: 50 nm thick; D: 200 nm thick) that were fabricated by mCP with HDT
Angew. Chem. Int. Ed, 37, 550-575 (1998)
Self-assembled monolayer (SAM) and μCP
Crystal growth
Whitesides et al., Nature, 398, 495 (1999)
21세기는 나노의 시대 21세기는 나노의 시대
수학, 화학, 물리, 생물, 공학의 융합 기술