¤} º õ m Í R } º T Æ X Ø º ; c 8 ý X ¢ InGaAsP-InP W ë s ¤ö n Ú º8 ý Y V Ët T Ò Þ
T
ø ¶ BÂ 6 Ò · L | - > 0 å
¦ 9@ / < Æ § F « Ñ/ B N < Æõ , " fÖ ¦ 136-701
,
>
ç ¡ 4 w H · % · n+ ä
[ j@ / < Æ § Ó ü t o x 9 6 £ x6 xÓ ü t o < Æõ , " fÖ ¦ 120-749
_
@* å ? · L |# Ü ` 9
ô
Dz D G õ < Æl Õ ü t ½ ¨" é ¶ F g l Õ ü t ½ ¨G ' p' , " fÖ ¦ 136-791
»? # Þ · ö ¶ B ø ¶ BÂ 6 Ò ∗
ô
Dz D G õ < Æl Õ ü t ½ ¨" é ¶ : £ ¤$ í ì r$ 3 G ' p' , " fÖ ¦ 136-791 (2005¸ 12 Z 4 23{ 9 ~ à Î6 £ §)
ª
Ä ºÓ ü t D ¥ ½ + Ë` ¦ 0 A # Y Us $ s ¸× ¼½ ¨ ¸_ InGaAsP-InP r « Ñ\ 1 MeV As s : r õ 80 keV H s
: r` ¦ ¸ ô Ç Ê ê, 800
◦C \ P % o # F g µ 1 Ï F g 8 £ ¤& ñ õ 188 nm ü < 155 nm _ ' õ AÒ os 1 l x (blue-shift) s { 9
# Qz ¤ . 80 keV_ H s : r ¸ \ _ ô Ç 155 nm_ ' õ AÒ os 1 l x É r F g | 9 & h r Ð\ s 6 x s 0 p x ¦, s
± ú
É r \ -t \ ¦ ! 9î r s : r` ¦ s 6 x # F g | 9 & h r Ð ½ ¨ & ³ ) a s : r ¸ l Õ ü t _ / B N& ñ q 6 x` ¦ Z
} É r \ -t (MeV)\ ¦ s : r` ¦ s 6 x H כ \ q K ´ ú §s ± ú Ø ¦ Ã º e H © & h s e . Õ ªo ¦, & h
< Ê_ ª \ É r { : £ § \ -t o\ ¦ · ú Ðl 0 AK ¸ | ¾ Ó` ¦ or & 80 keV H s : r` ¦ ¸ ô Ç õ
, ' õ AÒ os 1 l x É r & h < Ê_ ª \ + þ A& h Ü ¼ Ð 7 £ x ÷ & H כ s m e > & h < Ê ª s e 6 £ §` ¦ · ú Ã
º e % 3 .
PACS numbers: 42.88.+h, 78.66.-w
Keywords: ª Ä ºÓ ü t D ¥ ½ + Ë, ' õ AÒ os 1 l x, s : r ¸ , & h < Ê
I. " e  ] Ø
F
g | 9 & h r Ð (photonic integrated circuit)ü < ° ú É r é ß { 9
| 9
& h F g è H F g: x r Û ¼% 7 _ 5 Å q ¸ & h & h À 1 Ï t ¦
© ì r ½ + É × æ o l Õ ü t (wavelength division multiplex- ing) s µ 1 Ï ½ + Éà º2 ¤ > hZ > è (ì ø Í ¸^ Y Us $ s ¸× ¼, F
g ¸l , F g à º l , F g7 £ x; ¤ l , F g ¸ Ð 1 p x)[ þ t` ¦ _ } 9
\ | 9 & h # r Û ¼% 7 _ ß ¼l x 9 ] j q 6 x` ¦ × ¦ s H כ s
× æ כ ¹ô Ç & ³î ß s . é ß { 9 l ó ø Í0 A\ F g è \ ¦ | 9 & h l 0
AK " f Ä º & h Ü ¼ Ð כ ¹½ ¨÷ & H כ É r { : £ § (band gap) \ - t
ñ ¨ 8 (compatibility) s . + þ A& h F g | 9 & h r Ð ¸Ñ ý t
É
r F g7 £ x; ¤ l , F g à º l , F g ¸l \ ¦ 0 AK & h # Q ¸ 3> h_
É r { : £ § \ -t כ ¹½ ¨ ) a [1]. \ V\ ¦ [ þ t # Q, Y Us $ s
¸× ¼ü < ¸l , F g ¸ Ð\ ¦ < Êa | 9 & h H â Ä º, ¸
Ð_ { : £ § \ -t © ß ¼ ¦ Õ ª 6 £ § s ¸l , t
∗
E-mail: [email protected]
}
Ü ¼ Ð Y Us $ s ¸× ¼, 7 £ ¤ E
00g( ¸ Ð) > E
0g( ¸l )
> E
g( Y Us $ s ¸× ¼) s # Q ô Ç . [2] Õ ªA ë ß Y Us
$
s ¸× ¼\ " f µ 1 Ï ) a y n Cs ¸ Ð\ " f f ¨ à º þ j è
Ð ÷ & " f 5 Å x| ¨ c à º e H כ s . Ö ¦ Q s \ ¦ $ í 2 [ l
0 AK " f H 100 nm s © _ { : £ § \ -t o | ¨ c à º e
#
Q ô Ç [3,4].
{
: £ § _ a % ~ É r / B N ç ß ì r K 0 p x (spatial resolution)` ¦ % 3 l 0 A K
" f H d y Ê ê F $ í © ¢ ¸ H ª Ä ºÓ ü t (quantum well) D ¥
½
+ Ë (intermixing)` ¦ s 6 x ô Ç . Õ ª Q d y Ê ê F $ í © l Õ ü t
É
r ª Ä ºÓ ü t ½ ¨ ¸ (structure)_ \ x × þ [ > (epitaxial) F
$ í
© ` ¦ K ô Ç H 4 ¤ ¸ ú ô Ç / B N& ñ õ ¦q 6 x s H é ß & h s e
. Õ ª Q , ¾ Ó © ) a < Ê (defect-enhanced) ª Ä ºÓ ü t
D ¥ ½ + Ë É r F $ í © (regrowth)õ × þ & h % ò % i $ í © (selective- area growth) ~ ½ ÓZ O \ q # ç ß é ß ¦ ´ òõ & h Ê ê $ í © é
ß > (postgrowth level)\ " f { : £ §` ¦ ¸] X ½ + É Ã º e . [5,6]
s
{ : £ § ¸ H ª Ä ºÓ ü t õ © # 4 8 £ x (barrier) Ó ü t| 9 s
\
Ä »6 x ô Ç < Ê_ © ñ S X í ß _ ¸] X ` ¦ : x # 0 p x ¦,
-120-
induced disordering) [7-9], Á º Ô ¦í HÓ ü t o S X í ß (im- purity free vacancy diffusion) [10], F g f ¨ à º Ä » ¸ ) a D ¥ ½ + Ë (photoabsorption induced intermixing) [11-13], s : r ¸ l
Õ ü t (ion irradiation technique) 1 p x s e .
: r ½ ¨\ " f H ª Ä ºÓ ü t D ¥ ½ + Ë` ¦ 0 AK ± ú É r \ -t _
! 9î r s : r` ¦ ¸ # F g | 9 & h r Ð ¸Ñ ý t \ s 6 x 0 p x ô
Ç Y Us $ s ¸× ¼_ © s ' õ AÒ os 1 l x ÷ & H כ ` ¦ S X
% i . Õ ªo ¦, s Qô Ç ' õ AÒ os 1 l x \ s : r ¸ r & h < Ê _
ª Õ ªo ¦ l ó ø Í : r ¸ p u H % ò ¾ Ó\ · ú Ð ¤ .
II. ÷ m Ç] M öU ê s0 n É
InGaAsP-InP Y Us $ s ¸× ¼_ ½ ¨ ¸ H MOCVD (metal organic chemical vapor deposition)\ ¦ s 6 x K $ í
© % i . s M : ª Ä ºÓ ü t8 £ x õ © # 4 8 £ x` ¦ 6 ` ¦ § #
8 £ x (multi) ª Ä ºÓ ü t ½ ¨ ¸\ ¦ + þ A$ í % i . [ jô Ç ½ ¨ ¸
H Fig. 1 \ ? /% 3 .
s
: r ¸ H 1 MeV _ As s : r` ¦ 1 × 10
15ions/cm
2_
¸ | ¾ ÓÜ ¼ Ð l ó ø Í : r ¸ 200
◦C ü < 300
◦C \ " f y y
¸ % i . ¢ ¸ô Ç, 80 keV_ H s : r` ¦ l ó ø Í : r ¸ 200
◦C
\
" f 5 × 10
15ions/cm
2, 1 × 10
16ions/cm
2, 5 × 10
16ions/cm
2_ ¸ | ¾ ÓÜ ¼ Ð ¸ % i . Õ ªo ¦, s : r` ¦
¸ H 1 l x î ß G V , a A (channeling) ´ òõ \ ¦ × ¦ s l 0 AK r
« Ñ\ ¦ ¸ s : r Ü ¼ ÐÂ Ò' 7
◦l Ö ¦ # Qt > % i . s : r ¸
Ê ê ¸ H r « Ñ H / å L5 Å q\ P % o (rapid thermal annealing:
RTA) ~ ½ ÓZ O Ü ¼ Ð | 9 èì r 0 Al \ " f 800
◦C Ð 1 ì r 1 l x î ß \ P
%
o % i . \ P % o r InGaAs contact layer_ Ass l ó
ø ÍÜ ¼ ÐÂ Ò' ¾ ú Ü ¼ Ð S X í ß (outdiffusion) [3] ÷ & H כ ` ¦ }
l 0 A # Ò re ¦[ þ t` ¦ @ / (face to face)Ü ¼ Ð Z ~ H ~ ½ Ó Z O
s s 6 x ÷ &% 3 .
Fig. 1. The structure of InGaAsP-InP laser diodes.
: r \ " f F g µ 1 Ï F g (photoluminescence)8 £ ¤& ñ ` ¦ % i . F g µ 1 Ï F
g8 £ ¤& ñ r InP clad 8 £ x t d y ) a r « Ñ s 6 x ÷ &% 3 .
s
: r ¸ r Ò q t$ í ÷ & H & h < Ê_ ì r íü < ª ` ¦ \ V8 £ ¤ l 0
AK SRIM-2003 [14] r Ó ý t Y Us ` ¦ s 6 x % i .
III. + s ÇÊ Ý õ m Í w ² o
ª Ä ºÓ ü t D ¥ ½ + Ë É r > (interface)\ " f \ P & h Ä » ¸ Á º| 9
"
f (thermally induced disordering) ü < & h < Ê Ä » ¸ ) a Á º
| 9
" f(point-defect-induced disordering) ´ òõ \ _ K { 9 # Q
± ú
à º e . [3] Fig. 2 \ " f Ð1 p w s : r ½ ¨\ " f 6 x ô Ç InGaAsP-InP Y Us $ s ¸× ¼ H F g µ 1 Ï F g 8 £ ¤& ñ õ © s
1530 nm { : £ § \ -t \ ¦ . 800
◦C \ " f 1 ì r ç
ß \ P % o / B N& ñ ë ß # ¸ 50 nm _ ' õ AÒ os 1 l x s { 9 # Q è
ß . s H \ P & h Ä » ¸ Á º| 9 " f ´ òõ \ _ K ' õ AÒ os 1 l x s { 9
#
Q l M :ë H s . s : r ¸ r Ò q tl H & h < Ês \ O s é ß t
Z } É r \ P % o / B N& ñ \ _ K " f D ¥ ½ + Ës Ò q t| H כ É r D ¥
½
+ Ë_ & ñ ¸ (degree)\ ¦ ¸] X l # Q§ > l M :ë H \ Ä ºo
"
é
¶ H ª Ä ºÓ ü t D ¥ ½ + Ë´ òõ H m . Õ ª Q , s : r ¸ Ê
ê 800
◦C \ " f \ P % o ) a r « Ñ[ þ t É r \ P & h Ä » ¸ Á º| 9 " f ´ ò õ
ü < & h < Ê Ä » ¸ ) a Á º| 9 " f ´ òõ \ _ K 150 nm s © _
' õ AÒ os 1 l x s { 9 # Q 800
◦C \ P % o ë ß ô Ç r « Ñü < H 100 nm s © _ { : £ § \ -t s l M :ë H \ \ P & h Ä » ¸ Á
º| 9 " f ´ òõ \ _ ô Ç % ò ¾ Ós e 8 ¸ F g | 9 & h r Ð\ 6 £ x 6
x H X < H ë H ] j ÷ &t · ú § H .
Fig. 2. PL spectra of the ion irradiated samples after
annealing. InGaAsP-InP samples were irradiated by 1
MeV As ion and 80 keV H ion with dose of, respectively,
1 × 10
15ions/cm
2and 5 × 10
15ions/cm
2at substrate
temperature of 200
◦C, and then samples were subse-
quently annealed at 800
◦C for 1 min.
Fig. 3. Projected ion distribution (a) and vacancy distri- bution (b) of samples irradiated by 1 MeV As ion and 80 keV H ion with dose of, respectively, 1 × 10
15ions/cm
2and 5 × 10
15ions/cm
2using the SRIM-2003 simulation.
200
◦C \ " f 1 MeV _ As s : r õ 80 keV _ H s : r` ¦
¸ ô Ç r « Ñ[ þ t É r \ P % o / B N& ñ ` ¦ 2 ; Ê ê F g µ 1 Ï F g 8 £ ¤& ñ õ
y y 188 nm, 155 nm_ ' õ AÒ os 1 l x s { 9 # Qz ¤ . s Q ô
Ç ' õ AÒ os 1 l x É r s : r ¸ \ _ K & h < Ês Ò q t$ í ÷ & ¦, 5
Å q& h \ P % o H 1 l x î ß ª Ä ºÓ ü t` ¦ : x K & h < Ê_ S X í
ß s { 9 # Q ª Ä ºÓ ü t õ © # 4 8 £ x s \ D ¥ ½ + Ë` ¦ Ä » ¸
#
Y Us $ s ¸× ¼_ © ` ¦ y èr v l M :ë H s . Fig.
3 É r SRIM-2003 r Ó ý t Y Us ` ¦ s 6 x # 1MeV As s : r õ
80 keV H s : r` ¦ y y 1 × 10
15ions/cm
2, 5 × 10
15ions/cm
2 ¸ | ¾ ÓÜ ¼ Ð s : r ¸ r r « Ñ ? / { 9 s : r (projected ion) _ ì r íü < { 9 s : r õ ÷ & ³ 5s : r (recoiled ion) \ _ K µ 1 ÏÒ q tô Ç / B N/ B N, 7 £ ¤ < Êt % i ` ¦ · p כ s .
Fig. 3(b) \ " f Ð H ü < ° ú s 80 keV_ H s : r ¸ H 1 MeV _ As s : r ¸ ü < q § # , ¸ s : r _ \ -t
± ú ¦ H Z > l M :ë H \ s : r ¸ r Ò q t$ í ÷ & H & h
< Ê_ ª s 2.7C & h t ë ß F g | 9 & h r Ð\ s 6 x s 0 p x ô Ç 155 nm _ ' õ AÒ os 1 l x s { 9 # Qz ¤ . s ± ú É r \ -t \ ¦
! 9î r s : r` ¦ s 6 x # F g | 9 & h r Ð\ ¦ ½ ¨ & ³ô Ç s
: r ¸ l Õ ü t _ / B N& ñ q 6 x` ¦ Z } É r \ -t (MeV∼)\ ¦ ° ú
Fig. 4. PL spectra of samples irradiated by 80 keV H ion with various doses.
Fig. 5. PL spectra of samples irradiated by 1 MeV As ion at different substrate temperature. The samples were ir- radiated by 1 MeV As ion with dose of 1 × 10
15ions/cm
2at the substrates temperature of 200
◦C and 300
◦C.
H s : r` ¦ s 6 x H כ \ q K ´ ú §s ± ú Ø ¦ Ã º e H © & h
¸ e .
Fig. 4 H & h < Ê_ ª \ É r { : £ § \ -t o\ ¦ · ú
Ðl 0 AK l ó ø Í : r ¸ 200
◦C \ " f 5 × 10
15ions/cm
2, 1 × 10
16ions/cm
2, 5 × 10
16ions/cm
2t ¸ | ¾ Ó
`
¦ or & 80 keV _ H s : r` ¦ ¸ ô Ç Ê ê F g µ 1 Ï F g` ¦ 8 £ ¤
&
ñ ô Ç כ s . Fig. 4 \ " f Ð1 p w s \ P % o / B N& ñ Ê ê ¸
| ¾ Ós 7 £ x ½ + ÉÃ º2 ¤ ' õ AÒ os 1 l x É r y y 155 nm, 144 nm, 100 nm Ð y èô Ç . 7 £ ¤, ¸y 9 & h < Ê ª s 7 £ x ½ + ÉÃ º2 ¤ {
: £ § \ -t H × ¦ # Q H . " f, s Qô Ç ' õ AÒ os 1 l x \ H S. Charbonneau 1 p x [2] s Ð ¦ô Ç ? /6 x õ ° ú s & h < Ê_
ª \ + þ A& h Ü ¼ Ð ¸÷ & H כ s m 5 × 10
15ions/cm
2s _ ¸ | ¾ Ó\ " f ' õ AÒ os 1 l x s © ß ¼> ÷ &
H e > & h < Ê ª s e 6 £ §` ¦ · ú Ã º e % 3 .
s
: r ¸ r l ó ø Í : r ¸\ É r { : £ § \ -t o\ ¦ S X
l 0 AK " f 1 MeV As s : r` ¦ 5 × 10
16ions/cm
2_
¸ | ¾ ÓÜ ¼ Ð 200
◦C ü < 300
◦C \ " f s : r ¸ \ ¦ z ´'
s
1 l x s { 9 # Qz ¤ . s : r ¸ r Z } É r l ó ø Í : r ¸ (300
◦C)
H / B N/ B N õ î r : £ § D h" é ¶ ç ß F ½ + Ë\ 8 ´ òõ & h s
¦ F « Ñ_ q & ñ | 9 s | ¨ c 0 p x$ í ¸ " f ± ú É r l ó ø Í : r
¸ (200
◦C) \ q K 8 H 200 nm _ ' õ AÒ os 1 l x s e 6 £ §` ¦ S X
% i .
IV. + s Ç Â ] Ø
InGaAsP-InP Y Us $ s ¸× ¼\ 1 MeV As s : r õ 80 keV H s : r s l ó ø Í : r ¸\ ¦ 200
◦C Ä »t 9 y y 1 × 10
15ions/cm
2, 5 × 10
15ions/cm
2_ ¸ | ¾ ÓÜ ¼ Ð ¸
) a Ê ê, 800
◦C \ " f 1 ì r 1 l x î ß \ P % o # F g | 9 & h r Ð
\
s 6 x 0 p x ô Ç 188 nm, 155 nm _ ' õ AÒ os 1 l x s { 9 # Qz ¤
. 80 keV_ H s : r ¸ \ _ ô Ç 155 nm_ ' õ AÒ os 1 l x É r F
g | 9 & h r Ð\ s 6 x s 0 p x ¦, s ± ú É r \ -t \ ¦
! 9î r s : r` ¦ s 6 x # F g | 9 & h r Ð ½ ¨ & ³ ) a s
: r ¸ l Õ ü t _ / B N& ñ q 6 x` ¦ Z } É r \ -t (MeV)\ ¦ s
: r` ¦ s 6 x H כ \ q K ´ ú §s ± ú Ø ¦ Ã º e H © & h s e
. & h < Ê ª \ @ /ô Ç { : £ § \ -t o\ ¦ · ú Ðl 0 AK 200
◦C \ " f 5 × 10
15ions/cm
2, 1 × 10
16ions/cm
2, 5 × 10
16ions/cm
2_ ¸ | ¾ ÓÜ ¼ Ð 80 keV H s : r` ¦ ¸ r
õ y y 155 nm, 144 nm, 100 nm _ ' õ AÒ os 1 l x` ¦ { 9
#
Qz ¤ . Õ ª õ ' õ AÒ os 1 l x \ H & h < Ê_ ª \ + þ A
&
h Ü ¼ Ð ¸÷ & H כ s m 5 × 10
15ions/cm
2s _
¸ | ¾ Ó\ " f ' õ AÒ os 1 l x s © ß ¼> ÷ & H e > & h < Ê ª s
e 6 £ §` ¦ · ú Ã º e % 3 . Õ ªo ¦, 1 × 10
15ions/cm
2_ ¸
| ¾ ÓÜ ¼ Ð 1 MeV As s : r ¸ r Z } É r l ó ø Í : r ¸ (300
◦
C) H / B N/ B N õ î r : £ § D h" é ¶ ç ß F ½ + Ë\ 8 ´ òõ
&
h s ¦ F « Ñ_ q & ñ | 9 s | ¨ c 0 p x$ í ¸ " f ± ú É r l ó ø Í
: r ¸ (200
◦C) \ q K 8 H 200 nm _ ' õ AÒ os 1 l x s % 3 # Q f
` ¦ S X % i .
P
c p 8 ý ò k >
: r ½ ¨ H õ < Æl Õ ü t Â Ò t " é ¶ H " é ¶ § 4 ½ ¨> hµ 1 Ï
\ O
_ t " é ¶ Ü ¼ Ð s À Ò# Q & _ þ v m . s \ y × ¼a Ë >m .
[1] D. Nie, T. Mei, H. S. Djie, M. K. Chin, X. H. Tang and T. X. Wang, J. Vac. Sci. Technol. B 23, 1050 (2005).
[2] S. Charbonneau, E. S. Koteles, P. J. Poole, J. J.
He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P.
G. Piva and I. V. Mitchell, IEEE J. Select. Topics Quantum Electron. 4, 772 (1998).
[3] M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P.
J. Poole, S. Charbonneau and A. P. Roth, IEEE J.
Select. Topics Quantum Electron. 4, 741 (1998).
[4] V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S.
Lim and B. S. Ooi, IEEE J. Select. Topics Quantum Electron. 8, 870 (2002).
[5] H. S. Djie, T. Mei, J. Arokiaraj and D. Nie, J. Appl.
Phys. 96, 3282 (2004).
[6] J. Z. Wan, J. G. Simmons and D. A. Thompson, J.
Appl. Phys. 81, 765 (1997).
[7] M. D. Camras, N. Holonyak Jr., K. Hess, M. J. Lu- dowise, W. T. Dietze and C. R. Lewis, Appl. Phys.
Lett. 42, 185 (1983).
[8] K. Meehan, N. Holonyak Jr., J. M. Brown, M. A.
Nixon, P. Gavrilovic and R. D. Burnham, Appl.
Phys. Lett. 45, 549 (1984).
[9] T. Wolf, C. L. Shieh, R. Engelmann, K. Alavi and J. Mantz, Appl. Phys. Lett. 55, 1412 (1989).
[10] S. G. Aling, A. C. Bryce, I. Gontijo, J. H. Marsh and J. S. Roberts, Semiconduct. Sci. Technol. 9, 2149 (1994).
[11] D. Kirillov, J. L. Merz, P. D. Dapkus and J. J. Cole- man, J. Appl. Phys. 55, 1105 (1984).
[12] J. Ralston, A. L. Moretti, R. K. Jain and F. A.
Chambers, Appl. Phys. Lett. 50, 1817 (1987).
[13] A. McKee, C. J. McLean, G. Lullo, C. Bryce, R.
D. De La Rue, J. Marsh and C. Button, IEEE J.
Quantum Electron. 33, 45 (1997).
[14] J. F. Ziegler, J. P. Biersack and U. Littmark, The
Stopping and Ion Range of Ions in Matter (Perga-
mon, New York, 1985).
Blue-Shift of an InGaAs-InP Quantum-Well Structure by As and H Ion Irradiation
J-H Lee and I-H Choi
Department of Materials Science and Engineering, Korea University, Seoul 136-701
S. W. Shin and C. N. Whang
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749
Y. T. Byun and K. S. Choi
Photonics Research Center, Korea Institute of Science and Technology, Seoul 130-650
T. G. Kim and J. H. Song
∗Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130-650 (Received 23 December 2005)
InGaAsP-InP samples with a laser diode structure were irradiated with 1 MeV As ions and 80- keV H ions for quantum-well (QW) intermixing, and the samples were subsequently annealed by rapid thermal annealing at 800
◦C. The photoluminescence measurements confirmed that the main PL peaks of the 1 MeV As ion and the 80 keV H ion irradiated sample were blue-shifted by 188 nm and 155 nm, respectively. The 80 keV H ion irradiation inducing 155-nm blue shift can be applied to photonic integrated circuits (PIC). If a PIC can be fabricated by using light H-ions with such a low energy, the fabrication cost can be greatly reduced comparing with when using high-energy (∼MeV) ions. In order to confirm the effect of the quantity of defects on the modification of the bandgap energy, 80 keV H ion was irradiated with various doses. It is found that blueshift does not depend linearly on the quantity of defects and there exists critical quantity of defects that induce maximum blueshift.
PACS numbers: 42.88.+h, 78.66.-w
Keywords: QW intermixing, Blue-shift, Ion irradiation, Point defects
∗
