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Luminescence of CaS:Bi

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Luminescence of CaS:Bi Bull. Korean Chem. Soc. 1999, Vol. 20, No. 3 337

Luminescence of CaS:Bi

Chang-Hong Kim,* Chong-Hong Pyun,HanChoiJ andSung-JinKim*

DivisionofApplied Science, Korea Instituteof Scienceand Technology, Seoul136-791, Korea t Departmentof Chemistry, Ewha WomansUniversity, Seoul120-750, Korea

Received July 20, 1998

Luminescence of bismuthactivated CaS, CaS:Bi, preparedinsodiumpolysulfide isstudied. Excitationspec­ trumof CaS:Bi shows a bandat 350nm due totherecombinationprocessbetween holes inNa+Ca2+ and elec­ tronsin conduction bands, in addition to bandsat 260 nmfrom band gap of CaS, and at320 nm (1So 1Pi)and at 420 nm (1S0 3Pi) from electronicenergy transitions of Bi.Emission band at 450nm isfrom3Pi t 1S0 tran­ sition of Bi3+,bandsat 500 nm and580nmcorrespond to recombinations of electron donors(Bi3+Ca2+ and Vs2-) with acceptors (VCa2+ andNa+Ca2+). Emissionbandof 3Pi t 1S0 transition is shiftedtolongerwavelengthfrom CaS:BitoBaS:Bi,due to the increase of the Stokesshiftbythe decrease of the crystalfieldparameter from CaS:Bi to BaS:Bi.

Introduction

Bismuth activated CaS, CaS:Bi, has been well knownfor a long time as abluephosphor and used asa photolumines­ cence, electroluminescence, cathodoluminescence and ther­ moluminescencematerial.14

The s2-sptransitionofBi3+ is anallowedone: Bi3+ has an electronic configuration of 6s2 inthe ground state and 6s6p inthe excited state. Luminescence spectrumofions with s2- sptransitionsuchasBi3+, Pb2+, Sn2+, and Sb3+ shows a very broad gaussian band. For example, the band halfwidth of Sn2+ is ~0.65 eV.5 The characteristics of abroadband can be explainedwith their configurational coordinate energydiagram.

Thepotential energy curveofthe luminescent center inthe lattice canbe plotted asa function of thedistancerbetween the central cation and surrounding anions. In the potential energydiagram,thecoordinateof theexcitedstateminimum is shiftedfrom that of the ground stateminimum. This shift is very large for s2-sp transition, and the excitedp state is much widerthan theground s state. Therefore,luminescence froms2-sptransitionisobserved to be averybroad emission band.

Theemitting state for Sn2+, Pb2+, and Bi3+ is the 3P1 state.

But ina crystal field, this level splits into three sublevels, and the position of Bi3+ emission band can be changed dependingon thehostmatrix.

Vj and Mathur founda weak orange band at590nm in addition tothe strong blue band at 450 nm in the emission spectrum of CaS:Bi3+ at roomtemperature, and interpreted that the orange band is originated from the sulfur ion vacancy.6 Yamashita and Asano obtained blue (450 nm), green(515nm), and orange (588nm) emissionbandsat 300 K, and these bands were assigned tobands fromelectronic transition of Bi.3+7 Recently, Park assigned the emission band at 520 nmin CaS:Bi to the emissionfromthe defect centerformed byBi3+-Na+ pair.8

In this work, we found the emission spectrum of Bi3+ in CaS is not only from the electronic energy levelstransition ofBi3+, but also from the emission centers ofdefects and

vacancies in the CaS:Bi system. We could also observe Stokes shift in the emission band ofBi3+ by changing the host from CaS to BaS.

Experiment

Section

Bismuth (Bi3+) doped alkaline earth sulfides (CaS, SrS, BaS)were prepared by two methods: reaction in Na2COs+S flux and in H2Sflow. Thestartingmaterials for the synthesis of Bi doped alkaline earth sulfides were CaCO3 (Aldrich, 99+), SrCO3 (Aldrich, 99.9%), BaCOs (Aldrich, 99.9%), Bi2O3 (Aldrich, 99.9%), Na2CO3 (Aldrich, 99.95%) and S (Kanto, E.P.). For the synthesis of CaS:Bi,thestoichiometric amounts of starting materials with excess amount of flux werewell mixed and heated in a covered alumina crucibleat 1000 oC for 2 hrs. The residual flux in the product was washed out with distilledwaterat room temperature and the final product was dried after rinsing with ethyl alcohol.

SrS:Bi and BaS:Bi wereprepared in the streamof H2S gas flow. Themixtureof SrCOa or BaCOa and Bi2O3 washeated at 1000oC for 6 hrs. in the streamof H2S flow.

The products wereanalyzedbytheX-ray diffractiontech­ nique and XRD datawereobtained withRigaku X-ray dif­ fractometer using Cu Ka radiation. For photoluminescence (PL) measurements, monochromated 150 W Xenon lamp was used as an excitation source. The PL spectra were obtainedusing monochromator equipped with photomulti­ plier tube.

Results andDiscussion

Figure 1 shows X-ray diffraction patterns of CaS:Bi, SrS:Bi and BaS:Bi. The structure of host materials arerock­ salt type and thelattice parameter ofCaS:Biwas 5.69 Aand thoseof SrS:Bi and BaS:Biwere 6.02 A and 6.38 A, respec­

tively. No extra peaks except rock-salt structure sulfides were observed. The body color of CaS:Bi is changed from light yellow to black depending on the concentration of

Bi3+.

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338 Bull. Korean Chem. Soc. 1999, Vol. 20, No. 3 Chang-Hong Kim et al.

(q

alsu

I

e

A

m

A細 ・・ . •‘• " ' 세

I ---

」—

L

20 30 40 50 60 70

20

Figure 1. The X-ray diffraction patterns of (a) CaS:Bi, (b) SrS:Bi, and (c) BaS:Bi. Bi concentration was 0.05 mole% for each phosphors.

(q

Ausu

250 350 450 250 350 450

wavelength (nm)

Figure 3. The excitation spectra of CaS:Bi. (a) y=0.05, (b) y=0.25, (c) y=0.5, and (d) y=1.0, where y=Bi mole%.

Excitation Spectra of CaS:Bi. The ground state ofBi3+

with 6s2 configuration is 1S0. The excited levels have 6s6p configuration. Thus, 3P0,3P1,3P2, and 1P1 arepossible states.

Figure 2 showstheenergylevelsof ns2ion in theOh symme­ try. The transitions from 1S0 to 3P0 and 3P2 are completely spin forbidden, butthe two levels 3P1 and 1P1 aremixed by spin-orbital coupling. Therefore, the transitions 1S° T 3Pi

and1P1 areallowedtransitions andareexpected to haverea­ sonableabsorptionintensity.9,10

The excitation spectra ofCaS:Bi are shownin Figure 3.

These spectra showthree broad bands: the band at 260 nm correspondstothebandgap of CaS, and that at380-450 nm corresponds to 1S° T 3P° transition of Bi3+. But the band 250-350 nm inCaS is not clear, because it changed with the monitoring wavelength and the doping concentration of Bi3+. The excitation band around 350 nm is stronger than

Figure 2. Energy level diagram of a ns2 ion in the Oh symmetry.

Solid lines are allowed transition and dashed lines are forbidden transitions.

anyother bands when itwasmonitored at515 nm and 580 nm.It suggests that another excitation center otherthan 1P1

and3Pi states exist inCaS:Bi.

Emission Spectraof CaS:Bi. Bismuthdoped CaS shows different colors of emissiondepending on the doping con­ centration of Bi. Forexample,theemissioncoloris changed to blue, white,yellow,anddeep yellow when theBiconcen­ trationis increasedto 0.05 mole%, 0.25 mole%, 0.5 mole%, and 1.0 mole%,respectively.

(q

Ausu

400 500 600 700 800400 500 600 700 800 wavelength (nm)

J

\ (a) ex:260 nm I ---y=0.05

1 --- 0.25

/\l —0.5

\ --- 10

p

\ (b) ex:320 nm

L

\ (c) ex:350 nm \ (d) ex:418 nm

uL

Figure 4. The emission spectra of CaS:Bi (y=mole%) under the excitation by (a) 260 nm, (b) 320 nm, (c) 350 nm and (d) 418 nm.

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Luminescence of CaS:Bi Bull. Korean Chem. Soc. 1999, Vol. 20, No. 3 339 Figure4shows that theemissionspectra of CaS:Bidepend

on the Bi concentration andthe excitationwavelength. The emission spectraof CaS:Bi consist of three broadbands of 450, 515 and 580nm. Thebandsat515 and 580 nm are con­

siderably enhanced as the concentration ofthe Bi3+ ion is increased from 0.05%to25%. Inaddition, intensityof these bands are maximized under the excitation of350 nm. As previously known, the band at 450 nm corresponds to 3P1T 1S0 transitionof the atomicenergylevelinBi3+, how­

ever,bands at 515 and580 nm have not been explained in theliteratureuntilnow.

WhenCaS:Biis prepared in Na?CO3+S flux, Bi3+ ions can easily be doped to Ca2+ sites by compensating the charge with Na+. Especially, two Ca2+ (1.00 A) sites canbe easily replacedby a Bi3+ (1.03 A)ionand a Na+ (1.02 A)iondueto the similarsizeof theirionic radii.11 WhenCa2+ sitesinCaS arereplacedby Bi3+and Na+, the following defectequations canbefollowed:

2Ca2+=2Na+Ca2+ +Vs

3Ca2+=2Bi3+Ca2+ + VCa2+

2Ca2+=Bi3+Ca2+ + Na+Ca2+

Previously, similar defect formationmechanisms couldbe used toexplain thenature of excitation and emissionbands of CaS:La, CaS:DyandCaS:CepreparedinNa?CO3+S flux.

Especially, in CaS:La, La3+ ion itself does not have d and f electrons. Therefore, possible vacancies (VCa2+, VS2-) and defects formedbythe substituted ions (Na+Ca2+, La3+Ca2+) are considered to be responsible for the luminescence of CaS:La. Forexample,theemission bandsat 450 nm and 500 nmareassigned to thebandsresultedfromthetworecombi­ nationprocess ofLa3+Ca2+ (orVs2-) withholes inthe valence bandand with vacancies of Ca2+ ion, VCa2+. Here La3+Ca2+ and VS2- are the electron donor and the acceptor, respectively.

The bandat 580 nmisassignedtothebandresultedfromthe recombinationprocess ofLa3+Ca2+ andNa+Ca2+ sites.9-12 Simi­ lar spectra can also be observed in CaS:Dy prepared in Na2CO3+Sflux. The emission spectrum of CaS:Dy has two bands at 520 nm and 580nmin addition to the weak lines from thef-f transition of Dy3+.

In the same manner, we suggest that the luminescence spectraofCaS:Bi3+consist of twokindsof bands: oneisdue to the atomic energy level transitions and the other one is due to the recombination processes of the defects in CaS:M3+ type materials. Both the energy states of Bi3+ ion and the energy bands of defects in CaS are shown in Figure 5. Both the emission bands at 515 and 580 nm are suggested to be associated with the lattice defects: The formeris due to therecombinationof Bi3+Ca2+/Vs2- and VCa2+, which is a different view from others.8 The latter band is associatedwiththerecombination of Bi3+Ca2+/Vs

2

- levelwith Na+Ca2+ level.

The emission intensity at 450 nm decreases with Bi con­

centrationabove 0.05 mole % (refer toFigure 4), wherethe concentrationquenchingseemstobeginfromrelativelylow concentrationofBi. However, the emissions duetodefects and vacancies in the range of 500-600 nm continue to

conduction band

valence band

Figure 5. The atomic energy levels of Bi3+ and energy levels of defects and vacancies in CaS:Bi. a: 320 nm (3.87 eV), b: 420 nm (2.95 eV), c: 450 nm (2.76 eV), d: 260 nm (4.76 eV), e: 300 nm (4.13 eV), f: 350 nm (3.54 eV), g: 450 nm (2.76 eV), h: 515 nm (2.40 eV), and i: 580 nm (2.14 eV).

su

을-

p

Eou으

350 400 450 500 550 600 650 700 750 800 wavelength (nm)

Figure 6. Emission spectra of (a) CaS:Bi (0.05 mole%), (b) SrS:Bi (0.05 mole%), and (c) BaS:Bi (0.05 mole%).

increase beyond the quenching concentration point of Bi.

Thisrelativelyearlyquencingpoint ofBi maybe due to the interaction of the activator Bi3+ with the luminescence cen­

tersat lattice defects.

Emission Spectra of Bi Doped Alkaline Earth Sulfides.

The emission color of Bi doped alkaline earthsulfides are differentdependingonthe alkaline earthmetals: The emis­ sioncolorof CaS:Biisblue(450nm), that of SrS:Bi isgreen (497 nm) and thatof BaS:Biis red (608 nm). The emission spectra of SrS:Bi andBaS:Biare shown in Figure6.

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340 Bull. Korean Chem. Soc. 1999, Vol. 20, No. 3 Chang-Hong Kim et al.

Table 1. The Stokes shift and crystal field parameter of Bi doped alkaline earth sulfides

Stokes shift (cm-1) Crystal field parameter (10 Dq, cm-1)

CaS:Bi 1,340a 1,588c 18,750b

SrS:Bi 2,570a 3,239c 17,400b

BaS:Bi 4,490a 5,082c 16,100b

afrom ref. 9. from ref. 14. cthis study.

Figure 7. Simplified potential energy curve of Ca:Bi. Excited state level is only shown the lowest state of 3P1 stokes states. Only the lowest allowed stark state, 3Pi, is indicated in excited states.

fides fromCaS to BaS. From thisdiagram, we can explain the increase of the Stokes shift to longer wavelength from CaS toBaS.Theloweststate of 3P1 Stark state goes higher in energy from CaS toBaS, which is duetothe fact that CaS has larger 10 Dq than SrS and BaS.Sosplitting of3P1 stateis influenced much more by CaS. The minimum 3P1 energy level of Bi3+ in BaS is located at a large <r> value, and accordinglyitleadsto a large Stokes shiftof BaS.

Conclusions

The excitationspectraofCaS:Bishowthree broadbands:

the band at 260nm is from band gaptransitionofCaS, that at 320nm isfrom1S° T 1P1 transitionandthatat 420 nmis from 1S0 T 3P1. The excitation intensity at 350 nm is increasedwith theincrease of Biconcentration, especially at 515 nm and 580nm emission. It is indicated the excitation band at 350 nm is not from Bi3+ transition, but from the recombination between Na+Ca2+ andthe hole in the conduc­

tion band. The emission band at 450 nm is from 3P1

t

1S°

transition of Bi3+, that at 515nm is duetothe recombination of Bi3+Ca2+/Vs

2

-and VCa2+, and that at 580 nm isassociated withtherecombinationof Bi3+Ca2+ and Na+Ca2+.The positions of emissionbandsof CaS:Bi to BaS:Bi are shiftedto longer wavelength by the Stokes shift due to the crystal field effect.

Acknowledgment. S.-J. Kim thanks the KOSEF (96­ 0501-0601-3) forfinancialsupportof thisresearch.

References

Thepositionsofeachemission band of SrS:BiandBaS:Bi was shiftedtoward longer wavelength from that of CaS:Bi.

Table 1 shows the Stokes shiftandthecrystalfield parame­

ter (10 Dq) of alkaline earth sulfides. The Stokes shift is taken as the energy difference between the maximum of

1S0 T 3Pi excitationand the maximum of 3Pi

t

1S° emis­ sion. The Stokes shift for Bi3+ in thehost sulfide increases going from CaStoBaS.Bimuthion would betightlybonded by the surrounding anions in CaS, whereas it would be loosely bonded in SrS and BaS due to the increase of the effective distance between the central cation and the sur­ rounding anion as shown in the potential energy diagram.9 This may bepossible,because ionicsize of Bi3+ is similarto that of Ca2+,butissmaller than that of Sr2+ (1.18 A)and Ba2+

(1.35 A).11 The excited state of3P1 ofBi3+ splits into three levels in a crystal fieldby the Stark interaction. Therefore, the energy ofemission bandsof Bi3+ischangedby the host matrix. The lattice parameters of CaS:Bi, SrS:Bi, and BaS:Biare obtained as 5.69 A, 6.02A, and 6.38 A,respec­ tively. Thusthecrystal fields, 10 Dq,maybe decreased from CaS:BitoBaS:Biasshownin Table 1.13

Figure 7 shows a simplified potential energy-configura­ tional coordinate diagram ofBi3+ doped alkaline earth sul-

1.

2.

3.

4.

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Marwaha, G. L.; Singh, N.; Nagpal, J. S.; Mathur, V. K.

Radiation Effects 1981, 55, 85.

Zope, J. K.; Walunjkar, P. G. J. Luminescence 1971, 4, 25.

Marwaha, G. L.; Singh, N.; Mathur, V. K. J. Phys. Chem.

Solids 1982, 43, 271.

Vecht, A.; Waite, M.; Higton, M. H.; Ellis, R. J. Lumine­

scence 1981, 24/25, 917.

Yamashita, N.; Asano, S. J. Phys. Soc. Japan 1976, 41, 536.

Vij, D. R.; Mathur, V. K. Indian J. Pure Appl. Phys. 1969, 7, 638.

Yamashita, N.; Asano, S. J. Phys. Soc. Japan 1976, 40, 144.

Yu, I.; Park, H. L.; Kim, H. K.; Chang, S. K.; Chung, C. H.

Phys. Stat. Sol. 1989, (b)153, K183.

Donker, H.; Yamashita, N.; Smit, W. M. A.; Blasse, G.

Phys. Stat. Sol. 1989, (b)156, 537.

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