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(1)

Electronic Properties

of Nano-Carbon Systems

Carbon Nanotubes Graphene

Intercalated Graphite Networks

Individual Wires Siegmar Roth

s.roth@fkf.mpg.de

(2)

Lecture 4

24th March 2009

a) “Bsic Solid State Physics”

b) “Devices based on

Individual Carbon Nanotubes”

(3)

Format of future lectures?

Basics in the morning?

(9:00 to 10:30?)

Research Report in the evening?

(17:00 to 18:00? = 09:00 – 10:00?) (18:00 to 19:00?)

(19:00 to 20:00?)

Evening lecture would allow

Europeans to attend via internet

(4)

Basics:

How would we organize the exams?

a)Midterm:

5 to 10 topics out of a list, write a few lines to each of the topics, but enough to convince me that you understand the matter

b) Endterm: again 5 to 10 topics from the list + a short oral discussion

(5)

Topics List for Siegmar’s Lectures 1.) What is a crystal?

2.) Why are crystals so important for solid state physics?

3.) What is special with nanocrystals?

4.) Crystal lattice, elementary cell 5.) Reciprocal lattice

./.

(6)

Topics List for Siegmar’s Lectures 6.) Particle-wave-dualism

7.)Electrons in a solid 8.) Bloch Waves

9.) Density of States 10.) Fermi Level

11.) Energy Bands, Electrons, Holes, Doping

12.) Energy Gap 13.) Electron Spin

./.

(7)

Topics List for Siegmar’s Lectures 14.) Drude Model

15.) Drift Velocity 16.) Mobility

17.) Ballistic Transport 18.) Hall Effect

19.) Quantum Hall Effect 20.) Magnetoresistance

21.) Thermoelectric Effect 22.) Ideal Conductivity

23.) Superconductivity

./.

(8)

Topics List for Siegmar’s Lectures 24.) Carbon

25.) Graphite 26.) Diamond 27.) Graphene 28.) Nanotubes 29.) Fullerenes 30.) Peapods 31.) Polymers

32.) Conjugated Polymers 33.) Polyacetylene

34.) Conducting Polymers ./.

(9)

Topics List for Siegmar’s Lectures 35.) Composites

36.) Nanocomposite 37.) Percolation

38.) Transparent Conducting Films 39.) Microwave Attenuation

40.) Actuators

41.) Nanosensors 42.) Field Emission

./.

(10)

Topics List for Siegmar’s Lectures 43.) Supercapacitors

44.) Batteries with Nanotubes 45.) Fuel Cells

46.) Electrochromic Devices 47.) Solar Cells

48.) Thermoelectric Energy Harvesting 49.) …..

50.) …..

./.

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200nm Long, very straight tubes => well suited for El. Diffraction 50nm

1 SWNT, with contacts

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Devices based on

Individual Carbon Nanotubes

(26)

Minimum Knowledge:

Single-Walled Multi-Walled

Semiconducting Metallic

What are Nanotubes?

(27)

The Price of 1 Nanotube:

1 tube contains about 10**5 atoms

12g --- 10**23 atoms --- 10**18 tubes 1g --- 1k € --- 10**17 tubes

1 tube costs about 10 f€

(28)

AFM image of SWCNT over gold leads on Si chip, representing a „conventional“

carbon nanotube transistor

(29)

Schematic view of

„conventional“ Carbon Nanotube Transistor

(30)

Transistors

Three Terminal Device Source, Drain, Gate

Active Channel, Gate Dielectric Output Characteristics

Transfer Characteristics

(31)

Singel Electron Transistors

Coulomb Blockade V = Q / C

V … Voltage [Volts]

Q … Charge [Coulomb]

C … Capacitance [Farad]

E = ca. 10-19 Coulomb

C = 10-18 Farad (single nanotubes) Æ V = ca. 1 eV (Electronvolt)

(32)

Sensors

Sensitivity Selectivity

Reproducibility Calibration

Self-Learning Systems ?

(33)

Output Characteristics of CNT Transistor at various gate voltages

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„All-Carbon“ Transistor

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Wet-chemical synthesis of nanotube junctions

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0.0 0.2 0.4 0.6 0.8 1.0 0

100 200

G 12 (nS)

carbon gate (mV)

Change of channel conductance as function of voltage at carbon gate

(40)

-0.2 -0.1 0.0 0.1 0.2 0.0

0.5 1.0 1.5 2.00 20 40 60 80 100 0 50 100 150 200 250

-0.80 -0.4 0.0 0.4 0.8 40

80

0 2 4 6 8 10

10-12 10-11 10-10 10-9 10-8

(d)

(e)

(f) (c)

G 12 (nS)

back gate (V)

(b)

G 12 (nS)

(a)

G 12 (nS) G12 (nS)

back gate (V)

carbon gate = 0.4 mV

carbon gate = 1 mV carbon gate = 0

α Eg G12 (S)

back gate (V)

Introduction of insulating barrier into metallic tube by application of voltage to carbon gate

(41)

Dy@C82

(Dy@C82)n@nanotube Dy atom

Metallofullerene Peapod

(42)

TEM of (Dy@C-82)@SWCNT

(43)

Nanotube peapod FETs

0 200 400 0 200 400

(b) 265 K

300 K (a)

G (nS)G (nS)

-10 -5 0 5 10

0 25 50 75 100

(c)

215 K

42 K 75 K 100 K

4 K 11 K

G (nS)

VG (V) Vds

n++ Si

SiO2

Vgs

Drain Source

Gate Voltage

(44)
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Spin Valve

29.05.07 Strasbourg s.sahakalkan@fkf.mpg.de

R

A H

Co Co

Vg

Vsd

(46)

CIA = Current-Induced Annealing

(47)

Vertical Nanotube Transistor (Patented by Infineon

- and by Samsung ?!)

C

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Battery of Nanotube Transistors (Infineon)

(49)

Vias from Nanotube Bundles (Cooperation with Infineon)

(BMBF „INKONAMI“ mit Infineon)

(50)

BMBF

„INKONAMI“

Infineon

(51)

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