SEMiX ® 4s

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SEMiX ^® 4s

GB

Trench IGBT Modules

SEMiX604GB12E4s

Features

• Homogeneous Si

• Trench = Trenchgate technology

• V_CE(sat) with positive temperature coefficient

• High short circuit capability

• UL recognized, file no. E63532

Typical Applications*

• AC inverter drives

• UPS

• Electronic Welding

Remarks

• Case temperature limited to T_C=125°C max.

• Product reliability results are valid for Tj=150°C

• Dynamic values apply to the following combination of resistors:

RGon,main = 1,0  RGoff,main = 6,2  R_G,X= 2,2  R_E,X= 0,5 

Absolute Maximum Ratings

Symbol Conditions Values Unit

IGBT

V_CES T_j= 25 °C 1200 V

IC

T_j= 175 °C T_c= 25 °C 916 A

T_c= 80 °C 704 A

ICnom 600 A

I_CRM I_CRM = 3xI_Cnom 1800 A

VGES -20 ... 20 V

t_psc

V_CC= 800 V VGE≤ 20 V

VCES≤ 1200 V Tj= 150 °C 10 µs

Tj -40 ... 175 °C

Inverse diode IF

T_j= 175 °C T_c= 25 °C 707 A

T_c= 80 °C 529 A

IFnom 600 A

I_FRM I_FRM = 3xI_Fnom 1800 A

IFSM t_p= 10 ms, sin 180°, T_j= 25 °C 3240 A

T_j -40 ... 175 °C

Module

It(RMS) T_terminal= 80 °C 600 A

T_stg -40 ... 125 °C

Visol AC sinus 50Hz, t = 1 min 4000 V

Characteristics

Symbol Conditions min. typ. max. Unit

IGBT

V_CE(sat) I_C= 600 A V_GE= 15 V chiplevel

T_j= 25 °C 1.8 2.05 V

Tj= 150 °C 2.2 2.4 V

VCE0

chiplevel T_j= 25 °C 0.8 0.9 V

T_j= 150 °C 0.7 0.8 V

rCE V_GE= 15 V chiplevel

T_j= 25 °C 1.7 1.9 m

T_j= 150 °C 2.5 2.7 m

VGE(th) VGE=VCE, IC= 24 mA 5 5.8 6.5 V

I_CES VGE= 0 V VCE= 1200 V

T_j= 25 °C 5 mA

T_j= 150 °C mA

C_ies

VCE= 25 V V_GE= 0 V

f = 1 MHz 37.2 nF

Coes f = 1 MHz 2.32 nF

C_res f = 1 MHz 2.04 nF

Q_G V_GE= - 8 V...+ 15 V 3400 nC

R_Gint T_j= 25 °C 1.25 

td(on) VCC= 600 V I_C= 600 A V_GE= ±15 V RG on= 1.7  RG off= 6.9  di/dt_on= 7100 A/µs di/dt_off= 6350 A/µs

T_j= 150 °C 374 ns

t_r T_j= 150 °C 85 ns

Eon T_j= 150 °C 35 mJ

t_d(off) T_j= 150 °C 1277 ns

t_f T_j= 150 °C 114 ns

Eoff T_j= 150 °C 110 mJ

Rth(j-c) per IGBT 0.049 K/W

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SEMiX604GB12E4s

Characteristics

Symbol Conditions min. typ. max. Unit

Inverse diode V_F = V_EC I_F= 600 A

VGE= 0 V chiplevel

T_j= 25 °C 2.1 2.46 V

Tj= 150 °C 2.1 2.4 V

VF0

chiplevel T_j= 25 °C 1.1 1.3 1.5 V

Tj= 150 °C 0.7 0.9 1.1 V

rF

chiplevel T_j= 25 °C 1.1 1.4 1.6 m

Tj= 150 °C 1.7 1.9 2.1 m

I_RRM I_F= 600 A

di/dt_off= 6000 A/µs VGE= -15 V V_CC= 600 V

T_j= 150 °C 430 A

Q_rr Tj= 150 °C 100 µC

Err T_j= 150 °C 44 mJ

R_th(j-c) per diode 0.086 K/W

Module

LCE 22 nH

R_CC'+EE'

res., terminal-chip T_C= 25 °C 0.7 m

T_C= 125 °C 1 m

R_th(c-s) per module 0.03 K/W

Ms to heat sink (M5) 3 5 Nm

M_t to terminals (M6) 2.5 5 Nm

Nm

w 400 g

Temperature Sensor

R100 Tc=100°C (R25=5 k) 493 ± 5% 

B_100/125 R_(T)=R₁₀₀exp[B_100/125(1/T-1/T₁₀₀)]; T[K]; 3550

±2% K

SEMiX ^® 4s

GB

Trench IGBT Modules

SEMiX604GB12E4s

Features

• Homogeneous Si

• Trench = Trenchgate technology

• V_CE(sat) with positive temperature coefficient

• High short circuit capability

• UL recognized, file no. E63532

Typical Applications*

• AC inverter drives

• UPS

• Electronic Welding

Remarks

• Case temperature limited to T_C=125°C max.

• Product reliability results are valid for Tj=150°C

• Dynamic values apply to the following combination of resistors:

RGon,main = 1,0  RGoff,main = 6,2  R_G,X= 2,2  R_E,X= 0,5 

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Fig. 1: Typ. output characteristic, inclusive R

_{CC'+ EE'}

Fig. 2: Rated current vs. temperature I

_C

= f (T

_C

)

Fig. 3: Typ. turn-on /-off energy = f (I

_C

) Fig. 4: Typ. turn-on /-off energy = f (R

_G

)

Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

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SEMiX604GB12E4s

Fig. 7: Typ. switching times vs. I

_C

Fig. 8: Typ. switching times vs. gate resistor R

_G

Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R

_{CC'+ EE'}

Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge

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This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

SEMiX 4s

spring configuration