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Temperature Dependence of Upper Critical Field and Its Anisotropy Ratio of $SmFeAsO_{0.85}$ and $SmFeAsO_{0.8}F_{0.2}$ Single Crystals

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P4

Temperature Dependence of Upper Critical Field and

Its Anisotropy Ratio of SmFeAsO

0.85

and

SmFeAsO

0.8

F

0.2

Single Crystals

Hyun-Sook Lee

a

, Jae-Hyun Park

a

, Jae-Yeap Lee

a

, Ju-Young Kim

b

, Marek Bartkowiak

c

,

Jun Sung Kim

a

, B. K. Cho

b

, Chang-Uk Jung

d

, and Hu-Jong Lee

a

a Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea b Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea c Hochfeld-Magnetlabor Dresden (HLD), Forschungszentrum Dresden-Rossendorf, D-01314 Dresden, Germany

d Department of Physics, Hankuk University of Foreign Studies, Yongin, Gyeonggi 449-791, Republic of Korea

We investigated temperature dependence of upper critical fields (Hc2(T)) and its anisotropy of F-free

SmFeAsO0.85 and F-doped SmFeAsO0.8F0.2 single crystals, grown at high pressure with a nominal

composition, by measuring resistive transition in static and pulsed magnetic fields up to 7 T and 60 T, respectively. Hc2(T) for the field parallel to c-axis (Hc2//c(T)) and ab-plane (Hc2//ab(T)) obtained in both single

crystals exhibited the behavior similar to those of AEFe2As2 (AE=alkali earth) series, i.e., a linear increase of

Hc2//c(T) and a sublinear increase of Hc2//ab(T) with decreasing temperature below the superconducting

transition, which is in contrast to the result reported in NdFeAsO1-xFx single crystals. Fermi-surface topology

as well as paramagnetic pair-breaking effect is responsible for the field-orientation-dependent behavior of Hc2

(T). In addition, anisotropy ratio of γ(T) =Hc2//ab/Hc2//c (T) tells the existence of a multi-band nature.

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