Active Devices
초고주파공학
조용희
전자파연구실
2
LNA (Low Noise Amplifier), PA (Power Amplifier), Mixer, VCO, switch
Filter, duplexer
Transmitter and receiver
전자파연구실
4
Noise figure: 2 dB
Amplifier gain: 15 dB
Return loss: 15 dB
Reverse isolation: 20 dB
Impedance matching: power and noise
HP
ADS (Advanced Design System)
AC and DC path
전자파연구실
6
Common-mode noise
180° hybrid
Insertion of inductor element
Power and noise matching
전자파연구실
8
Input impedance
Power matching
Thermal noise Shot noise
Thermal noise: white noise, Nyquist formula
Shot noise: vacuum tube, semiconductor
Flicker noise: 1/f noise, semiconductor
GkTB i
RkTB v
R R
kTB v P
n n
n n
4 4
) (
2
2 2
2
q V kT
V r I
qB I
i
T
T n
DC diode
DC
2
2
전자파연구실
10
SNR: signal to noise ratio
Noiseless system: NF = 1
Noisy system: NF > 1
in out out
in out
in
N N S
S SNR
NF SNR
1 2 1
total
1 G NF F
NF
Amplifier and mixer in cascade
LNA: NF and G
in
in out
in
out
1
1 1
N G N N N
N NF G
Noise ratio generated by system
전자파연구실
12
Thermal noise
p s s
p s
p p s
R R KTB
R
KTB R
R R
R
NF R
1
4
) //
(
2
4
Voltage attenuation
Output noise voltage Thermal noise, shot noise
Constant noise figure circle
Noise model
Equivalent resistor전자파연구실
14
2 2 2
11 22
21 12
1 | | | | | |
2 | || |
S S
K S S
11 22 12 21
S S S S
Stability circle:
Unconditionally stable:
K 1, 1
1
Output power (P1dB), power gain
Linearity (OIP3)
Efficiency (PAE)
Temperature
Power amplifier scheme
전자파연구실
16
Drain efficiency:
Power added efficiency:
DC RFout
P P
D
DC
RFin RFout
P P PAE P
Beat
IP3: third intercept point
IIP3: input IP3
OIP3: output IP3 = IIP3*G
Corruption of signal
전자파연구실
18
Input power vs. IM power