Korean Chemical Engineering Research
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(2) o* û * kÐ Ï]. †. ¤ò¬H/ àê¬H dà@ àHê , d Q ó} QÎ- 2-2 õ§¬H/ àê¬H dHàHê ÖQ ¬éC Uô 134 ¸ ö ³ [¤, 2004¸ 12ö 16³ >). 445-743 * 120-749 (2004 11 5. Stripping of Ion-Implanted Photoresist Using Cosolvent-Modified Supercritical Carbon Dioxide In-Il Jung, Ju-Won Kim, Sang-Yun Lee*, Woo-Sik Kim*, Jong-Hoon Ryu and Gio-Bin Lim† Department of Chemical and Biochemical Engineering, The University of Suwon, San 2-2, Wau-ri, Bongdam-up, Hwaseong, Gyeonggi 445-743, Korea *Department of Chemical Engineering, Yonsei University, 134, Sinchon-dong, Seodaemun-gu, Seoul 120-749, Korea (Received 5 November 2004; accepted 16 December 2004). ß È. á õCÑ2 K àÄk³ ¡ê 𻪠«d!õ «ÄGñ «2 ,
(3) Ñ ÊéG2 «5?½ ¯S( )T(IIP, ion-implanted photoresist) Ú ÍÍ ¨í fM à_s 97, 148, 200 C 5Q 200, 300, 400 bar Ft ÆQÑ ¤}G. «5?½ ¯S()T2 ¨¤ 𻪠«d!Ñ g fMæ( :Ik÷ èO(swelling)æ 2 as e¯O ¤ ÀÉ. K, ³ àÄk Ú 9 É ÄkË HY àÄk³ ¡ê 𻪠«d! Q) Êo «5?½ ¯S()Tõ èOQÿ÷, fMÑ ÁêJ«( \G. 6÷ DMSOÑ DIWÍ HYê HY àÄ k(5%, v/v)³ ¡ê 𻪠«d! Q)Êo 97 C, 200 bar 5, Ft ÆQÑ 30~ 8 §_ Y×s ¤ }K ê «5 ?½ ¯S()T fMÑ ÁêJ«É(u 80%). á õCÑ Äê HY àÄk³ ¡ê ð» ª «d! Q)Êo ñ¶ K Ta(ashing) Ú ê ÄkÍ ,á« æ2 5R §_ ör ¬8k³ dHU. Äê ¤õ ÝQ ¤ À. o. o. Abstract − We propose an effective and environmentally friendly dry stripping method using a supercritical carbon dioxide (SCCO2) system modified by a single and multiple cosolvents to remove ion-implanted photoresist and residue from a wafer surface at three different temperatures (97, 148, 200 oC) and pressures (200, 300, 400 bar). After high dose of ion implantation the photoresist was not easily removed by using pure SCCO2, but swollen. The SCCO2 system modified by single cosolvents and multiple cosolvents mixed with aprotic solvents could not effectively remove the heavy organics, but swell them. However, the SCCO2 system modified with multiple cosolvent (5%, v/v) composed of DMSO and DIW showed high removal efficiency for ion-implanted photoresists at 97 oC and 200 bar for 30 min (about 80%). In this study it has been shown that the dry stripping method using SCCO2 system modified with multiple cosolvents could replace either plasma ashing or acid and solvent wet bench method and dramatically reduce accompanied chemical usage and disposal. Key words: Supercritical Cleaning, Ion-implanted Photoresist, Dry Cleaning. 1.. C «. Î ªJ¯ 4J ®CÑ g
(4) Ï Â§dæ2 § «, 2010¸Ñ2 450 mm «2 ¿DQ 45 nm ¡³° -Ê 26í K)¿ à_« 1®O ak³ +æÊ À. «6K ä Æ èMÑ !ñ IKML, C- , 450 mm «2, | Ò¡ §d Ù ¡d2 ªg îwæ2 *³Ò à_ íès ®CGÊ À[1]. ä à«) fÆ à_o ¿j ô(deposition), , à_. D¬ 4Y¯ ä Æo K èMê
(5) ´ *³ Ò à_ íè« ®CæÊ À. à«)(device) fÆÑ DRAM † To. whom correspondence should be addressed. E-mail: [email protected]. ‡. « øéo õ§¬0/ 6ÎR /¤ _¸s ,Ä/ñ ·ÊæÉ5n. 27.
(6) _¯³ö6?òö«Oö6ÎRöKÜåö»/[. 28. -Ê RÎ à_« äÞJk³ ,}æ 2) ¯S()T 2 , à_s 0g ¡³ Ò¡ K §CÆ s .g ÄæÊ À. «6K ¯S( )T2 §CÆ á { à_ MÑ äÃQ fMÍ æ´t G UK fMÍ «P´(( :s Î ¨í³ j æ´ MÜ f\ DIG Ú
(7) d ò¯« ê. ä à«) fÆ à_ y FEOL(front end of line) à_ M ªÑ ¯S()T fMõ .K à_o J´ 30¡ « « ®CæÊ À. à«) fÆ y «5c½ à_ ÍÑ !¶ «5 c½Ñ g ¡ ê ¯S()T fM à_ ÍG2 Y_«[1]. ¯S()T2 KD Ê~É í0³ ³äJk³ däÑ g fMî ¤ À(O à«) fÆà_ y «5c½ ÙÑ g dê Î ³äJ¯ 5R§_ öRÑ K d/fM à_k³ f MÍ ´sî à«) Ñ Íñ KDí³ ÊéGj ê. é, « 6K ¯S()T fM à_o ³äJk³ QR §_ê 5R §_ s ³}GÊ Àk÷ ñ¶ Kõ «ÄK QR §_ ör Î ¯ S()Tõ UGj fMG( \G, U¾ Ù åD 1 í0Ës fMG( \K. K, 100 C « Ê5 =õ K( G2 ñ¶ Kõ «ÄK QR §_ Î à«) IKM í0 KMSs ¡dQÿ2 Ù éfY« Àk «õ ÝUGD . g H /N Ú UV/O Ù §_ ör« f8æÊ À[2, 3]. é ¯S()T Ú 1ís fMGD .g - JÄæ2 5 R§_ öro ³äJk³ zê ê¤ HYís ÄG2 SPM « Äæ2) s zRQÿ2 Y« À. «Ñ à_ «áÑ2 N-methyl-2-pyrrolidone (NMP), dimethylsulfoxide (DMSO)Ù KDÄkõ
(8) ÄGñ §_ ê_s ¤}GÊ À[4]. ¯S()T2 Ý Ê~É í0³ Ò¡ «Â(õ «2 .Ñ dGD .g Äæ, U¾, à«) MDJ U ¡ dõ .g ¨ís c½G2 «5c½ à_Ñ ¯S()T2 òG( :2 ò ¨í c½s LD .K K)¿³ Äê. «6K «5 c½ à_Ñ K)¿³ Äê ¯S()T ,
(9) Ñ2 ¨í «5ËÑ g ¯S()T Ñ ÊéG2 ¤, Ù òÉÍ öæ´ !d@(crust layer or carbonized layer)« ê[5]. c³ ¯S()T zQ +
(10) ,
(11) .Ñ æ2 !d@o 9 à (nonprous) CÆõ (nj æ´ ³äJk³ U Äk z·Í Ä«G( :4 ÄkÑ K fMÍ ´ . «6 K !d@s Í(2 ¯S()T fMÑ ñ¶ K ör« Íß - ÄæÊ Àk÷ ñ¶ K s .K Ê5 c¡ 5³ ¯Gñ ¯S()T Ñ ÊéG2 Äk÷ I~É
(12) Aè í0 Ë« ¯S()T !d@Ñ g j K÷Í( \GÊ ¯ S()T zT{ 2 ²ùs ³k[6]. «6K ²ù ÍÍío 9/J o ¤g ²Çs @ GÊ,
(13) Qo µ¤ ß9§_ s ®CK. K, à_ ß9Ñ ÍÍí« Jî Î ²ÇË« ñ «2Ñ éô î ¤ À. 𻪠K2 o Äg ê Kñ í0M K U Ñ g , yY, u, + ÙÑ ÄÉ fk, MÑ2 ä f Æà_Ñ DÊ §_ ör ¬8k³ M ÂD, ³á, éÌ) Ù s y[k³ 𻪠«d!õ «ÄK QR §_ à_« õCæÊ Àk, §_ à_ 4n¶ (developing), ª, QÆ, ô (metal deposition), IKMS 1ý ÙÑ ÄæÊ À[7]. 𻪠K³2 9l , 8_ , 9 ¯d Ú fJ +
(14) Ñ (photolithography) (etching) , (photoresist, PR). o. 2. 2. 3. ¤@¤ C43× C1 2005 2 . ßYs (n2 «d!Í - ÄæÊ Àk «d!õ. ÄG2 𻪠K à_ Î í0 ÙÑ ¬K Ägt Íõ .g
(15) KD Äkõ ÍGñ ÄGD K. «A. Äæ2 KD Äk2 DÊ öRÑ 9g kÎ
(16) s ÍGñ. ÄWk³ K dHU Äs k³ ¤ Àk, Äê «d !Q àÄk2 ÑK Ft ÆQÑ g j ~-Í æ³ é¨hGñ ÄO ¤ À´ h ndJ«Ê fJ«. á õCÑ2 «5 c½ à_ á !d@s (nÊ À2 ¯S ()Tõ fMGD .g 𻪠«d!Q K àÄkõ « ÄK 𻪠K à_ JÄs ]G. 2.. /ð£ Z tà. á õCÑ Äê Y- «22 P-type(100) _ ös (n Novolak resinê DNQ ~k³ «P´, ¯S()Tõ 1.2 µm &ÿ³ )- ªs «ÄGñ QZ. ¯S()Tõ K á ¯S()TÍ ¯ê Y- «2 ,
(17) Ñ «5 c½ à_s ¤}Gñ c½ê «5Ñ g ¯S()T ,
(18) Ñ dê !d @s (n´ fÊG. «A, «5c½o arsenic ions 20 KeV ÍQ 3 10 atoms/cm ³ c½G. «6 K ê_s 0Gñ »´, Y- «22 Fig. 1Ñ fQê àQ ç« u 1.2 µm ¯S()T @Ñ u 600 Å _ !d@« æÉ. fÊê «22 1 1 cm ¿D³ QGñ ÄG . 𻪠K³ Äê «d!2 99.99% ¨õ (n2 ak³
(19) « _f Ç« ÄGk, àÄk³2 ¯S() TÑ ¬g Äg « Ê «d!Q Hd « À2 DMSO, NMP, DMPU(1,3-dimethyl-3,4,5,6-tetrahydro-2[1H]-pyrimidone), DIW(deionized water) Ùs Eo HYGñ ÄG. 2-1. /# ð£ á õCÑ ÄK Y× ßj2 Fig. 2Ñ fQGk, §_s .K äD2 ÊFÑ Y×s ¤}O ¤ À´ ªæÉk, ä D zÑ Qss Ê_O ¤ À2 L
(20) (holder)õ Í(´ fÊ æÉ. 15. 2. 2. Fig. 1. SEM micrographs of the implant damaged photoresist coated wafer..
(21) «5?½ ¯5()6 fMõ .K 𻪠K à_. 29. Fig. 2. Schematic diagram of the supercritical cleaning apparatus used in this study.. Y×ßj2 ÊF «d!Q ³_
(22) àÄkõ àG2 à z, §_« «P´(2 ÊF äD, «d!Q 1 Äkõ ~-G2 ~-Ƴ C ê. Äk IßƳz ÷5 «d! 2 -Îæ´ ÊF _
(23) Bé(Teikoku, ELM-1, Japan)Ñ g ÍF ê. ÍFê «d!2 áöFtÆQD(back-pressure regulator, 26-1,700, accuracy: ±1%, Tescom, U.S.A.)Ñ g òG2 Ftk³ Æ Qæ, ÍFê «d! 5õ ä5³ b cD .Gñ äD z³ Ë´ÍD MÑ ùDõ jG. ÊFäD zÑ c½æ2 àÄk2 ÊF _
(24) c Bé(syringe pump, D series, Model 100D)õ «ÄGñ òG2 s c½O ¤ À´ G. ÊF äD zÑ2 band heaterõ zôGk PID 5 ÆQDÑ g ±0.1 C 5 p.Ñ ÆQæ´ G. ÊF äD zÑ c½ê 𻪠«d!Q àÄk òlK HY s .g äD zÑ /ä L¬õ Ê zÑ /äDõ Ä Gñ /äG. §_ Y׫ Ü0ê áÑ2 äD zÑ À2 ¯S()Tõ ¯WK àÄkõ ¨¤ 𻪠«d!õ ³_
(25) õJk³ sÝ c
(26) äD zÑ fMGk, ÊF äDÑ ê HY K2 ÝF S¿Ñ ÝFæ´ «d! Q àÄk2 ~-æ, àÄkÍ fMê «d!2 ³ ÂQ dry gas meter(SINAGAWA, DC-2)õ M° K
(27) « +_æÊ z³ öæÉ. ÝF S¿ Ft K áö Ft ÆQDõ 0g òG 2 Ftk³ ÆQæÉ. ÊF äD zÑ ÍÍG2 Íñ ÍÍ ís fMGD .g ÊF äD z ÍFê «d!õ Kí j z³ öG. §_ê «2 Qso H  s «Ä Gñ Y- «2 ,
(28) s îûGñ ¯S()T fM _õ e¯ G. o. 2-2. /# tà á õCÑ2 1 1 cm Qss ÊF äD z L
(29) Ñ Ê _GÊ, äDõ ó½(sealing)K á ÊF äD 5õ Y× 5 ³ ùG. ÊF äD 5Í ³_Gj æ
(30) ÊF _
(31) Béõ «ÄGñ 𻪠«d!õ ÊF äD z³ àG . «A «d!2 ùDõ M° Y× 5³ ùæ´ Ê F äD z³ ÍFê. «Q Wÿ ³_
(32) àÄkõ ÊF _
(33) c Béõ ÄGñ äD zÑ c½Gj ê. «Rj c ½ê 𻪠«d!Q àÄk2 /ä L¬ ¡MÑ g ³ «j æ´ Y- «2 ,
(34) k³z ¯S()Tõ fMQÿ j ê. §_ à_ QÑ« (û á 1ís ÄgK 𻪠«d!Q àÄk2 ÝF S¿³ « æj ê. « æ2 8 ÊF äD z³ ¨¤ 𻪠«d!Í à_ Ftk³ õJk³ c½ æ, ÝFS¿³ « ê 1ís ÄgK «d!Q àÄk2 ÝFÑ g ~-ê. «A ~-ê «d!2 ³ ÂQ dry gas meterõ 0g K
(35) « +_æÊ z³ ê. ¨¤ 𻪠«d!õ ÊF äD zÑ ª sÝsk³ ÊF ä D z Qss §tGk, ÍÍG2 ÄkÍ Ç´ QÆ à _s ¤}K á Qss ~G. 2. 3.. ûG Z +{. 𻪠«d!õ «ÄGñ Y- «2³z «5 c½ à_ á !d@s ä2 ¯S()T fMÑ ¬K s <4ÝÊ É 5, Ê, K àÄk Ùs ¡dQÿ
(36) Y×s ¤}G. Korean Chem. Eng. Res., Vol. 43, No. 1, February, 2005.
(37) _¯³ö6?òö«Oö6ÎRöKÜåö»/[. 30. e¯O ¤ À. DMSO «Ñ ³äJk³ ¯S()TÑ ¬g ΤK ÄgD ts (n2 NMP, DMPU, propylene carbonate(PC), ethyl glycol (mono) methylether acetate(EGMEA), diethylen glycol(mono) methylether (DGME), 1-methoxy-2-propanolËs àÄk³ 5%(v/v) ÄGñ 200 C 5 ÆQÑ 30~Ñ ¤}Gñ àÄk ¡dÑ !ñ s ]G. Fig. 52 ÎÎ àÄkÑ ¬K Y× ê H  ,s Ýñ cÊ À. =Ñ Ý׫ Äê HÇ à ÄkËo ¯S()Tõ èO 2 ¡ Qÿ2 òOs Ýk÷ «2 ,
(38) . ¯S()T ¬z~o ¬³ 4 À´ Äê àÄkËÑ g ¯S()T fMÍ æ( :{s e¯O ¤ À . K, ³ àÄkõ ÄO Î ³ Ê à_ ÆQÑ 5 ÍÑ K ¯S()TÑ ¬K Ägt« ÍO as D¬ Gk÷ ¤}ê ÆQÑ2 5 ÍÑ !ñ ¯S()T fM ÁS êõ e¯O ¤ ÇÉ. !¶ «á Y×Ñ2 9/J o 5 ÆQ¯ 97 CÑ }ê Y×Ñ Äê àÄk y 5R § _ê 𻪠«d! §_Ñ Äæ2 9 É Äk¯ DMSO, NMP[4, 8-10]Q DMPUõ >Gñ ÊQ àÄk
(39) ¡d Ñ !ñ s ]G. ¤}ê 52 97 C« «A ¨¤ «d! Ê2 u 0.7 g/cm s (r. àÄk Í
(40) o ¤ }ê à_ ÆQÑ «d! z)Ñ ¬g 10%(v/v)³ ÍG ñ ¤}G. ¤}ê ê2 Fig. 6Ñ ÷ Ék, Fig. 6Ñ < ¤ À׫ 5%(v/v) àÄkõ ÄK ÎÝ ¬Jk³ o
(41) J ¯S()TÍ fMæ2 as e¯G. «2 𻪠«d! Ê ÍQ Wÿ àÄk
(42) « ÍWÑ !¶ ¯S ()TÍ
(43) Q« fMæ2 ak³ _ê. 6÷ fQê H  ,(Fig. 6)Ñ < ¤ À׫ ¤}ê HÇ Î «2 ,
(44) u 20-30% _ ¯S()TÍ fMæÉs ¢
(45) ¯S()TÍ fMæ( :Ê ¬³ 4 À´ ³ àÄkõ « ÄK örk³2 ÁSJ¯ ¯S()T fMÍ ´sÒ ak³ ¶ê. 3-3. ´ @ô/ óK£ Lð K àÄkõ ÄK ê «d!-³ àÄk à_o ¯ S()T fMÑ ÁêJ«( \K ·s »s ¤ ÀÉ. « 6K Y×s à3k³ àÄk³ ÄK ÄkËs HYGñ DÝ UJ¯ HYÄUs àÄk³ JÄGñ ÝI[8, 9]. 𻪠à_ ÆQo 97 C, 200 bar 5, Ft ÆQÑ 5%(v/v) àÄkõ o. Fig. 3. Optical microscope images of photoresist stripped by SCCO2. The operating conditions were 97 oC, 200 bar and 60 min.. 3-1. 5Ï ¿û× < ¨¤ 𻪠«d!Os ÄGñ 97 C, 200 bar 5 F t ÆQÑ 60~ 8 ¯S()TÑ ¬K Ägts ]K ê ¯S()TÍ Ägæ2 as e¯O ¤ ÇÉk ³z ¯S( )T @« èOæ2 ao îûO ¤ ÀÉ(Fig. 3). «2 9 Ä k¯ «d!2 í0«÷ o ~É
(46) ·-ËÑ ¬Gñ Äk³ ÁêJ«( \G÷ à yÉ HìTõ Í(Ê À´ · -Ë CÆõ èO(swelling) Qÿ2 ak³ 0ê. 3-2. !Ç @ô/ óK£ Lð 9 J¯ 𻪠«d! í0«÷ o ~É
(47) í0Ñ ¬K fKê Ägts ÍQÿD .g2
(48) K D Äkõ àÄk³ ÍGñ ÄO ¤ À. á Y×Ñ2 ð DÑ DMSOõ àÄk³ ÄGñ Êõ ³_Gj K(G
(49) 5 ÍÑ s îûGD .K Y×s ¤}G. ³K « d! Ê(0.5 g/cm )õ (n2 ÆQ 97, 148, 200 C 5Q 200, 300, 400 bar Ft ÆQÑ àÄk Í
(50) s 5%(v/v)³ Ê_GÊ 30~ 8 Y×K ê H  ,s Fig. 4Ñ ÷ É. =Ñ Ý׫ ³K ÊÑ 5 ÍÑ !¶ !d@s ä2 ¯S()T fM « ó«õ Ý«( :Ik, MJk³ fMæ(2 :I(O ¯S()T @« èOæM÷ ¡ æÉ{s o. 3. o. o. o. 3. o. Fig. 4. Optical microscope images of photoresists stripped by SCCO2 modified with 5%(v/v) DMSO at different temperatures and pressures for 30 min; (a) T=97 oC, P=200 bar, (b) T=148 oC, P=300 bar, (c) T=200 oC, P=400 bar.. ¤@¤ C43× C1 2005 2 .
(51) «5?½ ¯5()6 fMõ .K 𻪠K à_. 31. Fig. 5. The effect of various cosolvents of 5%(v/v) concentration on the photoresist stripping. The operating conditions were 97, 200 bar and 30 min; (a) NMP. (b) DMPU, (c) EGMEa, (d) DGME, (e) PC, (f) 1-methoxy-2-propanol.. Fig. 6. The effect of various cosolvents of 10%(v/v) concentration on the photoresist stripping. The operating conditions were 97 oC, 323 bar and 30 min; (a) DMSO, (b) NMP, (c) DMPU.. Fig. 7. The effect of various cosolvents of 5%(v/v) concentration on the photoresist stripping. The operating conditions were 97 oC, 200 bar and 30 min; (a) DMSO+NMP, (b) DMSO+DMPU.. ÄGñ 30~ 8 ¤}Gk «A Äê àÄk2 DMSO+ DMPU, DMSO+NMP Ú DMSO+DIW HY àÄkõ ÄG. 9 É Äk¯ DMSO, NMP, DMPUÑ ¬g DMSOÑ NMP,. õ 9S³ HYGñ 5%(v/v)õ àÄk³ ÄK ê õ Ñ ÷ Ê À2), =Ñ & Äkõ HYK àÄkõ. ÄK Î K ¯S()T fMÍ 20-30% _ fMæÉs. DMPU 2:1 Fig. 7. Korean Chem. Eng. Res., Vol. 43, No. 1, February, 2005.
(52) _¯³ö6?òö«Oö6ÎRöKÜåö»/[. 32. S()Tõ Kíj fMO ¤ À´ Qc2 kí òOê o Êõ Í(2 𻪠«d!Í o ~É
(53) Ê~É í0s ÄgQÿ(2 \G÷ èOQk³ ¯S()T Ägõ Kí j ,}O ¤ À´ Qc2 òO« QÑ ÊÄGñ «P´,. «6K §_ èn o «2 §_ à_Ñ §_ QÑs O ¤ À. K, §_ á 1) Ú QÆ à_s ³ à_d Wk³ ‘dry-in, dry-out’ à_s ¤}O ¤ ÀD AéÑ Ä ÍD « kÎ Ç ak³ D¬ê.. [ ÷ á õC2 êHD¬z/KDêHé (_ ¤ò¬H/ h _D ¬õC« (òk³ ¤}æÉk «Ñ Ý Ã?n. Fig. 8. The effect of DMSO+DIW of 5%(v/v) concentration on the photoresist stripping. The operating conditions were 97 oC, 200 bar and 30 min.. M fMæ( :Ê ¬³ 4 ÀÉ. Fig. 8Ñ2 9 É Äk¯ DMSOÑ DIWs 14:1 9S³ HYGñ 97 C, 200 bar 5, Ft ÆQÑ 5%(v/v)õ ÄG ñ 30~ 8 𻪠K §_ à_s ¤}K êõ ÝñcÊ À . =Ñ å ¤ À׫ «2 ,
(54) ¯S()T y u 80% _Í fMê as e¯O ¤ ÀÉ. «6K ê2 ³K 5, Ft ÆQÑ ³ Ú 9 É ÄkË HY ÄUs àÄk³. ÄGs ÎQ 9/|s A ¯S()T fMS« u 2.7-4 OÏ ÍK êõ ÝñcÊ À. «6K DIW ÍÍ ¯S ()T fMÑ ´¡K ¯É³ ÊÄG2ÍÑ ¬K _eK èn o e¯O ¤ ÇÉk÷, DIW ÍÍ «5 c½ê ¯ S()T fMSs ÍQÿ2) y®K ¯É»s e¯O ¤ À Ék,
(55) Ï ªJ¯ õCÍ (Jk³ ,}æ´t KÊ @Î ê. o. 4.. û «. á øéÑ2 𻪠«d!õ «2 §_ à_ y KD1 í fMÑ ¬K §_ Äk³ s ]G 𻪠« d!2 9 Äk³ «6K 9 U s í0GD .g àÄkõ Wÿ ÄG. «6K 𻪠«d!õ «ÄK § _Ñ ð»ª «d! IY, Kñ eto ¯S()T Ägts Í(2 àÄkõ Wÿ í0³ Kíj z·QE ¯. ¤@¤ C43× C1 2005 2 . +S 1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA(2001). 2. Flamm, D. L., Solid State Technology, 35, 37-41(1992). 3. Louis, D., Lajoinie, E., Pires, F., Lee, W. M. and Holmes, D., “Post Etch Cleaning of Low-k Dielectric Materials for Advanced Inter Connects,” Charcterization and Process Optimization, 41-42, 415-418(1998). 4. Lee, W. M., “Aproven Sub-micron Photoresist Stripper Solution for Post Metal and via Hole Processes,” EKC Technology, Inc. (1996). 5. Nagal, N., Imai, T., Terada, K., Seki, H., Okumura, H., Fujino, H., Yamamoto, T., Nishuyama, I. and Hatta, A., Surf. Interface Anal., 34, 545-551(2002). 6. Gillespie, P., Berry, I. and Sakthivel, P., “Semiconductor Operations, Fusion Systems Division, Rockville, MD., Wafer Temperature Control-a Critical Parameter for Dry Photoresist and Residue Removal,” Semiconductor International(1999). 7. Weibel, G. L. and Ober, C. K., “An Overview of Supercritical CO2 Applications in Microelectronics Processing,” Microelectronic Eng., 65, 145-152(2003). 8. Mullee, W. H., “Removal of Photoresist and Residue from Substrte using Supercritical Carbon Dioxide Process,” Kor. Patent No. 2003-0024873(2003). 9. Cotte, J. M., McCullough, K. J., Moreau, W. M., Pope, K. R., Simons, J. P. and Taft, C. J., “Process of Removing Ion-implanted Photoresist from a Workpiece,” U.S. Patent No. 6,683,008 B1 (2004)..
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