½ ¨ 7 Hë H Sae Mulli (The Korean Physical Society), Volume 49, Number 4, 2004 ¸ 10 Z 4, pp. 329∼332

(1)

½ ¨ 7 Hë H Sae Mulli (The Korean Physical Society), Volume 49, Number 4, 2004 ¸ 10 Z 4, pp. 329∼332

CMOS ï " e Ó Þ ° Ë Ñ] K ¡ System8 ý כ r Ç4 õ m Í < gX c lM ø n Ú

»ø ¶ B? ^∗ · + ä ÷ 7 B) o

Â

Ò â @ / < Æ § o © & ñ Ð/ B N < ÆÂ Ò, Â Òí ß 608-737 (2004¸ 8 Z 4 6{ 9 ~ Ã Î6 £ §)

Ã

º F g è Ð" f 1/7 inch(diagonal = 3.1 mm) CMOS G ' p" f\ ¦ 6 x H ¸ { 9 : r B j 6 x F g < Æ>

\

¦ [ O > # e ¦ Û ¼h Ë : q ½ ¨ E $ Ý ¼\ ¦ f ] X / B N, ] j % i . ] j ) a F g < Æ> _ surface + þ A © É r peak to valley ° ú כs ± 0.1 µms ¦, © _ $ í 0 p x =/ B G` ¦ ¨ î l 0 A # grid + þ AI _ à Ôü < o © ¨ î 6 x à

Ô\ ¦ 6 x # ë ß 7 á ¤½ + Éë ß ô Ç õ \ ¦ % 3 % 3 .

PACS numbers: 42.15.Eq

Keywords: ¸ { 9 : r B j , F g < Æ> [ O > , CMOS G ' p" f, E $ Ý ¼

I. " e Â ] Ø

þ

j H [ þ t # Q mobile phone\ © Ã Ì ) a B j F g < Æ> _

$ í

0 p x s l > r_ Ö r ï 8_ $ í 0 p x` ¦ 0 p x ¦ e Ü ¼ 9, & ³F MEGA/ å L B j : r s > hµ 1 Ï÷ & ¦ e Ü ¼ 9, size è+ þ A o, slim o ÷ & " f F g < Æ> _ [ O > r ½ ¨ ¸& h ô Ç> \ Ø Ô ¦ e

. n t _ O B j H ß ¼> E $ Ý ¼# Q! l r^ ¦ o , s p t G ' p

"

f(CCD, CMOS)Â Òü < ° ú É r Ù þ d Â Ò¾ ¡ §í ß \ O õ B j ¸o

×

¼, í Ðá Ô 2 ;' , Õ ªA i èá Ôà ÔJ ?# Q1 p x PC Å Ò l l í ß \ O

`

¦ | ¦ e Ü ¼ 9, Ê ë@ / : r, MP3 e ¦ Y Us # Q, Ö r ï 81 p x õ

½ + Ë " f Ã º´ ú § É r n t _ O ! Q Û ¼ ] j¾ ¡ §` ¦ ë ß [ þ t ¦ e

. Ê ë@ / : r õ n t _ O B j _ ½ + Ë¾ ¡ § B j : r É r & ³ F

n t _ O B j _ ó ø ÍB | ¾ Ó` ¦ 0 p x H r © Ø ½ Ó` ¦ Ð

#

Å Ò ¦ e Ü ¼ 9, 100ë ß o ès © _ MEGA/ å L B j : r_ 1

p

x © Ü ¼ Ð · ú ¡Ü ¼ Ð Ö r ï 8r © ` ¦ d ¦ e H + þ A¼ # s [1].

n

t _ O B j ü < Ê ë@ / : r ] j ¸\ O ^ [ þ t_ â Ô q tÜ ¼ Ð © E $

Ý ¼Â Ò_ × æ כ ¹$ í s D h\ v > Â Òy ÷ & ¦ e Ü ¼ 9, s כ É r B

j Ê ë@ / : r1 p x ¢ - a$ í ] j¾ ¡ §_ $ í 0 p x` ¦ ý aÄ º H כ ¹ Ü ¼ Ð

6 x l M :ë H s .

B j \ 6 x ÷ & H F g < Æ> ¸Ñ ý t_ l : r& h כ ¹½ ¨ ½ Ó Ü

¼ Ð É r s Ý ¼s . { 9 ì ø Í& h Ü ¼ Ð E $ Ý ¼ f â s 3 mm & ñ

¸ ÷ & 9, $ q 6 x, â | ¾ Ó o, q ½ ¨ o1 p x \ & h ½ + Ëô Ç e ¦ Û ¼ h Ë

: èF ´ ú §s 6 x ÷ & ¦ e . Õ ª Q e ¦ Û ¼h Ë : èF H

: r ¸ü < _ þ v ¸\ y l M :ë H \ èF & ñ \ × æ` ¦ l K

ô Ç . & ³F ´ ú §s 6 x ÷ & ¦ e H e ¦ Û ¼h Ë : > \ P É r OZ1000, PC, Zeonex, OKP4, TOPAS, APEL1 p x s e

∗

E-mail: [email protected]

[1,2]. : r 7 Hë H \ " f H H» ¡ ¤F g < Æ\ _ K F g < Æ> _ íl [ O

>

X <s ' \ ¦ Ã ºu K $ 3 & h ~ ½ ÓZ O Ü ¼ Ð & ñ ¦, íl [ O

>

data` ¦ l í Ð # 1/7 u CMOS(complementary metal-oxide- semiconductor) G ' p" f\ ¦ 0 Aô Ç q ½ ¨ e ¦ Û ¼ h Ë

: E $ Ý ¼\ ¦ s 6 xô Ç mobile phone camera F g < Æ> \ ¦ [ O > , ]

j % i .

II. ° Ë Ñ] K ¡4 8 ý כ r Ç4 õ m Í < gX c l

F

g < Æ> H e ¦ Û ¼h Ë : q ½ ¨ E $ Ý ¼ 1B Ð ½ ¨$ í ¦, BFL(back focal length;E $ Ý ¼Ê êé ß \ " f CMOS image ac- tive % ò % i t _ o ) H & h ü @ cutting coatings ÷ &# Q e

H glass lid ¿ ºa 0.55 mmü < glass lid\ " f CMOS ac- tive area t _ o 0.3 mm H ¦& ñ ÷ &# Q e Ü ¼Ù ¼ Ð þ j è ô

Ç 0.85 mm s © s ÷ & ¸2 ¤ # ô Ç . ¢ ¸ô Ç 1/7 u format \ @ /6 £ x H ³ ðï r oy ` ¦ θ Ð # [ O > 3 l q ³ ð\ ¦ & ñ

s \ @ /6 £ x H í& h o f

⁰

H 6 £ § d \ _ K & ñ

) a .

f = y

⁰

tan θ (1)

¢

¸ô Ç lens Ä »´ ò½ ¨ â É r B j _ µ 1 ßl ' ¸ f -number_

&

ñ _ { 9 1 l x f â \ @ /ô Ç í& h o _ q ÐÂ Ò' & ñ

÷ &# Q . s ü < ° ú s F g < Æ> _ l : r ª s & ñ ÷ & s

ª \ ´ ú H F g < Æ> \ ¦ ½ ¨$ í l 0 A # H» ¡ ¤F g < Æ s : r

\

_ K y כ ¹ è_ / B GÒ ¦ì ø Í â rõ ¿ ºa \ ¦ & ñ ô Ç . s X O

>

& ñ ) a F g < Æ> \ q ½ ¨ > Ã º\ ¦ G 6 x # þ j& h o õ

&

ñ [3]` ¦ : x # Table 1\ ] jr ô Ç [ O > ª ` ¦ ë ß 7 á ¤ ¸ 2

¤ F g < Æ> \ ¦ ¢ - a$ í ô Ç [5].

-329-

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-330- ô Ç² D GÓ ü t o < Æ rt “D hÓ ü t o ”, Volume 49, Number 4, 2004 ¸ 10 Z 4

Table 1. Specification of optical system.

Parameter Specification

Sensor type CMOS

Sensor size 1/7 inch(2.15 × 1.66 mm, dia = 2.72 mm) Number of pixels 356 × 292 (Pixel size 5.6 × 5.6 µm, CIF)

Lens f /number f /2.4 Lens focal length 2.1 mm

View angle 65

^◦

MTF 50 lp/mm at 0.4

Distortion Max. 2.5 %

Fig. 1. Structure of 1/7-inch CMOS image chip-set.

r

] j¾ ¡ § ] j \ 6 xô Ç CMOS chip set format É r 1/7

u Ð" f Õ ª ½ ¨$ í + þ AI ü < F g < Æ& h : £ ¤$ í É r Fig. 1 ü < ° ú .

Glass lid \ 650 nm s © _ & h ü @ cutting coating` ¦

#

low pass filter % i ½ + É` ¦ # $ Å Ò Ã º @ /% i ` ¦ : x õ r v

¦, ¦Å Ò Ã º % ò % i ` ¦ é ß # CMOS t ¦ e H

© : £ ¤$ í $ \ ¦ ~ ½ Ót H % i ½ + É` ¦ { { © ¦ e Ü ¼ 9, Ò o Ã

º ] j x 9 ì rF g: £ ¤$ í ` ¦ ¦ 9ô Ç r F g % ò % i _

© (400 ∼ 650 nm)\ @ /ô Ç [ O > r × æ u H { 9 ì ø Í& h Ü ¼ Ð 537 nm 1.0 \ @ / # 460 nm 0.25, 610 nm 0.4, x 9 650 nm 0.3_ © @ /& h © Z > × æ u \ ¦ ¦ 9 # [ O > % i

. Fig. 2\ [ O > F g < Æ> _ layout\ ¦ [ O > data` ¦ Table 2 \ ? /% 3 . íl [ O > data Ð" f í& h o 2.1 mm\

Fig. 2. The layout of CMOS image optical system.

Table 2. Surface data of CMOS image optical system.

No. Radius (mm) Thickness (mm) Glass Object Infinity Infinity

Stop 1.979057* 1.95 PMMA

2 -1.459767* 0.82

3 Infinity 0.55 BK7

4 Infinity 0.30

Image Infinity 0.00

*Aspherical Coefficients Stop surface : k = 0.0

a4 = -0.60035, a6 = 4.75178, a8 = -61.1119, a10 = 211.614 2nd surface : k=-0.455310(ellipsoid surface)

a4 = -0.0153519, a6 = -0.309554, a8 = -0.795438, a10 = -1.66717 PMMA glass code : 585000.299000

@

/ # Ï ã J] X 0 p x ~ ½ Ó& ñ d k = k

₁

+ k

2

− d/nk

1

k

2

ÐÂ Ò' r

¹

= −r

2

= 2.1` ¦ Ø ¦µ 1 Ï& h Ü ¼ Ð # conic © Ã ºü < q ½ ¨ > Ã

º\ ¦ þ j& h o Ã º Ð # [ O > % i .

III. כ r Ç4 õ m Í < gX c l; c å ¾ Ë X ¢ Ä Z ØV Ä

n

t _ O G ' p" f6 x F g < Æ> H è+ þ A o slim o\ ¦ Æ Ò½ ¨ l 0 A # plastic q ½ ¨ E $ Ý ¼\ ¦ 6 x % i Ü ¼ 9, 1/7 u CMOS G ' p" f_ ½ © É r 2.15 × 1.657 mm

²

s Ù ¼ Ð @ /y _

U ´s F g < Æ> _ © \ @ /6 £ x ÷ &Ù ¼ Ð image circle size

2.72 mm ÷ & ¸2 ¤ % i .

Fig. 2 H þ j& h [ O > ) a F g < Æ> \ @ /ô Ç F g ¸ Ð" f F g

<

Æ> _ ½ ¨$ í + þ AI ü < l ½ ¨ [ O > r 9 כ ¹ô Ç l : r « Ñ Ð 6

x ) a . Fig. 3\ Table 2\ _ K ] j ) a q ½ ¨ F g < Æ> _

+ þ A © ` ¦ ¨ î H ~ ½ ÓZ O Ü ¼ Ð" f Taylor Hobson surface profiler\ ¦ s 6 x # 8 £ ¤& ñ ô Ç õ \ ¦ ? / ¦ e . Ä »´ ò

Fig. 3. Measurements of aspherical surface profile.

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½ ¨ 7 Hë H CMOS G ' p" f6 x F g < Æ System_ [ O > x 9 ] j l Õ ü t – ^ 7 á x I · & ñ 6 x$ 3 -331-

Fig. 4. Transverse ray aberrations.

½

¨ â ? /\ peak to valley° ú כs ±0.1 µm s ? / Ð ª ñô Ç + þ A

© ` ¦ Ä »t ¦ e 6 £ §` ¦ · ú Ã º e .

þ

j& h [ O > ) a F g < Æ> _ $ í 0 p x` ¦ ¨ î H ~ ½ ÓZ O É r ª ô

Ç ~ ½ ÓZ O s ] jr ÷ & ¦ e Ü ¼ : r 7 Hë H \ " f H F g Ã º ü <

grid distortion` ¦ s 6 x % i . Õ ªa Ë > 4 É r F g Ã º \ ¦ ¸

õ ½ ¨ \ @ /ô Ç ray fan + þ AI Ð ? /% 3 Ü ¼ 9, Õ ªa Ë >

\

" f Ã ºf » ¡ ¤ É r Ã º _ ß ¼l \ ¦ ? / ¦, Ã º¨ î » ¡ ¤ É r { 9 1

l

x_ ß ¼l \ ¦ ? / ¦ e . Ã º ¸ ÐÂ Ò' · ú Ã º e 1 p w s half field angle 32.74

^◦

\ @ / # 35 µm s ? / Ð ¸ H Ã

º Ð& ñ ÷ &# Q e 6 £ §` ¦ · ú Ã º e .

Fig. 5 H 0

^◦

, 20

^◦

Õ ªo ¦ 32

^◦

\ @ /ô Ç spot diagram` ¦

· p Õ ªa Ë >s . s Õ ªa Ë > É r z ´] j F g < Æ> \ " f © r y

Fig. 5. Spot diagrams.

Fig. 6. Longitudinal spherical aberration, astigmatism and distortion of optical system.

Ð# Å Ò ¦ e Ü ¼ 9, RMS(root mean square) f â s y y _ field angle\ @ / # 11.7 µm, 10.5 µm, 35.0 µm\ ¦

? / ¦ e . s כ É r r] X ô Ç> _ ' ¸\ ¦ ? / H Airy disk size H d A

d

= 2.44 f /]λ = 3.22 µm Ð" f CMOS sensor_ pixel size (5.6 µm)_ ] X ì ø Í& ñ ¸s . s כ É r F g

<

Æ> [ O > r ¦ 9 H r] X ô Ç> $ í 0 p x É r G ' p" f\ _ K ý a Ä

º H d` ¦ · ú Ã º e ¦, F g < Æ> _ $ í 0 p x` ¦ 8 £ ¤& ñ l 0 A # /

B

þ

j ¦ / B Nç ß Å Ò Ã º\ @ /ô Ç 11.2 µm pixel pitch\ @ / # 89.3 line pairs/mm s Ù ¼ Ð s ° ú כ\ @ / # lens_ $ í 0 p x` ¦

¨ î

H t ³ ð | ¨ c Ã º e .

|

¾ Ó` ¦ ? / H ' ¸\ ¦ ³ ðr ¦ e ¦, =/ B G Ã º H þ j@ / field \ @ / # 2.4 % s ? / Ð Ð& ñ ÷ &# Q e 6 £ §` ¦ · ú Ã º e

.

Fig. 7 É r Grid + þ AI _ x ^ \ @ / # f ] X O É % ò ô Ç

% ò

\ ' a¹ 1 Ï½ + É Ã º e H + þ AI Ð" f digital F g < Æ l l \ ¦ 6 x

Fig. 7. Distortion estimation result.

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-332- ô Ç² D GÓ ü t o < Æ rt “D hÓ ü t o ”, Volume 49, Number 4, 2004 ¸ 10 Z 4

Fig. 8. Image picture quality estimation result.

½ +

É M : \ O Ï ã Jî rF Y ` s =/ B G ÷ &# Q Ðe ` ¦ · ú Ã º e Ü ¼ 9, r y & h

´ òõ f ] X & h Ü ¼ Ð H Ã º Ð" f ª ñ > Ð

&

ñ ÷ &# Q e 6 £ §` ¦ · ú Ã º e .

Fig. 8 H s X O > [ O > ì r$ 3 ô Ç F g < Æ> \ ¦ ¸Ñ ý t + þ AI Ð ]

j # O É % ò ô Ç Õ ªa Ë >Ü ¼ Ð" f CCD G ' p" f Ð § 4 _ èq ¸ > [ þ t ¦ | 9 & h ¸ a % ~ l M :ë H \ " é ¶ } 9 o 0

p

½ + É Ã º e % 3 .

IV. + s Ç Â ] Ø

: r 7 Hë H \ " f H r Ð | 9 & h ¸ Z } " f è+ þ A o 0 p x ô

>

_ IR é ß } ïh As ) a glass l ó ø ÍÜ ¼ Ð ½ ¨$ í ÷ &# Q e Ü ¼ 9, E $ Ý ¼ H e ¦ Û ¼h Ë : q ½ ¨ E $ Ý ¼\ ¦ 6 x < ÊÜ ¼ Ð+ $ í 0 p x

. ¢ ¸ô Ç F g < Æ> H ¦& ñ í& h ~ ½ Ód Ü ¼ Ð í& h o \ ¦ 2.1 mm Ð ¦, f-number H % ò © O É % ò r þ j@ /ô Ç µ 1 ß> l 0 AK 2.4 Ð % i Ü ¼ 9, oy 65

^◦

Ð [ O > % i . [ O > ) a E $ Ý

¼_ כ ¹½ ¨ $ í 0 p x` ¦ ì r$ 3 ô Ç õ spot size 35 µms ? /s

p" f6 x F g < Æ> _ כ ¹½ ¨ $ í 0 p x` ¦ ë ß 7 á ¤ H mobile phone B

j F g < Æ> _ ¸Ñ ý t` ¦ [ O > ] j % i .

P c

p 8 ý ò k >

: r 7 Hë H É r 2000¸ ¸ Â Ò â @ / < Æ §ü < (Å Ò)` v à Ô : r-% 7 _ í ß

<

Æ ½ ¨ t " é ¶ \ O \ _ # ½ ¨÷ &% 3 _ þ v m .

Y c

p w Ã U Ø ô

[1] The Optical Journal, Special Issue 91, 25 (2004).

[2] C. G. Lee and B. D. Nam, Optical Science and Tech- nology 2, 62 (1998).

[3] T. H. Jamieson, Appl. Opt. 5, 11 (1971).

[4] Kyung Hee Hong, Hankook Kwanghak Hoeji 13, 507 (2002).

[5] Robert E. Fischer, Optical System Design (McGraw- Hill, SPIE Press, 2000), Chap. 21, p. 486.

Optical System Design and Manufacturing Technology for a CMOS Image Sensor

Jong-Tae Kim

^∗

and Yong-Seok Jeong

Division of Imaging Science & Technology, Pukyong National University, Busan 608-737 (Received 6 August 2004)

We have produced a plastic aspherical lens by designing the optical system of a mobile phone camera that uses a 1/7inch(diagonal = 2.72 mm) CMOS type image sensor. The peak to valley value of the surface shape of the manufactured optical system is ±0.1 µm. By using a grid form and a image to evaluate the performance, we obtained a satisfactory result.

PACS numbers: 42.15.Eq

Keywords: Mobile phone camera, Optical system design, CMOS sensor, Lens

∗

E-mail: [email protected]

 ½ ¨ 7 Hë H Sae Mulli (The Korean Physical Society), Volume 49, Number 4, 2004 ¸ 10 Z 4, pp. 329∼332

   ½ ¨ 7 Hë  H  Sae Mulli (The Korean Physical Society), Volume 49, Number 4, 2004 ¸  10 Z 4, pp. 329∼332

CMOS  ï " e  Ó Þ ° Ë Ñ] K ¡ System8 ý כ r Ç4  õ m Í < gX c lM  ø n Ú



»ø ¶ B?  ∗ · + ä ÷ 7 B) o 

Â

Ò â @ / < Æ § o © & ñ  Ð/ B N < ÆÂ Ò, Â Òí ß  608-737 (2004¸  8 Z 4 6{ 9  ~ Ã Î6 £ §)

Ã

º F g  è  Ð" f 1/7 inch(diagonal = 3.1 mm) CMOS G ' p" f\  ¦  6 x   H  ¸ { 9   : r B j 6 x F g < Æ> 

\

Ô\  ¦  6 x #  ë ß 7 á ¤½ + Éë ß ô  Ç   õ \  ¦ % 3 % 3  .

PACS numbers: 42.15.Eq

Keywords:  ¸ { 9   : r B j , F g < Æ>  [ O > , CMOS G ' p" f, E $ Ý ¼

I. " e Â ] Ø

þ

j  H [ þ t # Q mobile phone\   ©  Ã Ì ) a B j  F g < Æ> _ 

$ í

0 p x s  l  > r_  Ö  r ï 8_  $ í 0 p x`  ¦ 0 p x   ¦ e  Ü ¼ 9,  & ³F  MEGA/ å L B j  : r s  > hµ 1 Ï÷ & ¦ e  Ü ¼ 9, size  è+ þ A o, slim o ÷ &  " f F g < Æ> _  [ O > r  ½ ¨ ¸& h ô  Ç> \   Ø Ô ¦ e 

 . n t _ O  B j   H ß ¼>  E $ Ý ¼# Q! l r^  ¦ o , s p t  G ' p

"

f(CCD, CMOS)Â Òü < ° ú  É r Ù þ d   Â Ò¾ ¡ §í ß \ O õ  B j ¸o  

×

¼,  í Ðá Ô 2 ;' , Õ ªA i   èá Ôà ÔJ ?# Q1 p x PC Å Ò  l l  í ß \ O 

`

 ¦ |    ¦ e  Ü ¼ 9, Ê ë@ / : r, MP3 e  ¦ Y Us # Q, Ö  r ï 81 p x õ 

 

½ + Ë   " f Ã º´ ú § É r n t _ O   ! Q  Û ¼ ] j¾ ¡ §`  ¦ ë ß [ þ t  ¦ e  

. Ê ë@ / : r õ  n t _ O  B j _    ½ + Ë¾ ¡ §  B j  : r É r  & ³ F

 n t _ O  B j _  ó ø ÍB | ¾ Ó`  ¦ 0 p x    H r  ©  Ø   ½ Ó`  ¦  Ð

#

Å Ò ¦ e  Ü ¼ 9, 100ë ß  o ès  © _  MEGA/ å L B j  : r_  1

p

x © Ü ¼ Ð · ú ¡Ü ¼ Ð Ö  r ï 8r  © `  ¦   d   ¦ e    H + þ A¼ # s   [1].

n

t _ O  B j ü < Ê ë@ / : r ] j ¸\ O ^ [ þ t_   â Ô q tÜ ¼ Ð    ©  E $

Ý ¼Â Ò_  ×  æ כ ¹$ í s  D h\  v >  Â Òy  ÷ & ¦ e  Ü ¼ 9, s  כ  É r  B

j   Ê ë@ / : r1 p x ¢ - a$ í ] j¾ ¡ §_  $ í 0 p x`  ¦ ý aÄ º   H כ ¹  Ü ¼ Ð





6 x l  M :ë  H s  .

B j \   6 x ÷ &  H F g < Æ>   ¸Ñ ý t_  l  : r& h   כ ¹½ ¨  ½ Ó Ü

¼ Ð    É r  s Ý ¼s  . { 9 ì ø Í& h Ü ¼ Ð E $ Ý ¼ f   â s  3 mm & ñ



¸ ÷ & 9, $ q 6 x,  â | ¾ Ó o, q ½ ¨  o1 p x \  & h ½ + Ëô  Ç e  ¦ Û ¼ h Ë

:  èF  ´ ú §s   6 x ÷ & ¦ e   . Õ ª Q  e  ¦ Û ¼h Ë :  èF   H



: r  ¸ü < _ þ v  ¸\    y   l  M :ë  H \   èF   & ñ \    ×  æ`  ¦ l  K

  ô  Ç .  & ³F  ´ ú §s   6 x ÷ & ¦ e    H e  ¦ Û ¼h Ë : > \ P  É r OZ1000, PC, Zeonex, OKP4, TOPAS, APEL1 p x s  e   

E-mail: [email protected]

[1,2].  : r  7 Hë  H \ " f  H   H» ¡ ¤F g < Æ\  _ K  F g < Æ> _   íl  [ O 

>

 X <s ' \  ¦ Ã ºu K $ 3 & h   ~ ½ ÓZ O Ü ¼ Ð   & ñ  ¦,  íl [ O 

>

 data`  ¦ l  í Ð #  1/7   u  CMOS(complementary metal-oxide- semiconductor) G ' p" f\  ¦ 0 Aô  Ç q ½ ¨  e  ¦ Û ¼ h Ë

: E $ Ý ¼\  ¦ s 6 xô  Ç mobile phone camera F g < Æ> \  ¦ [ O > , ]

j   % i  .

II. ° Ë Ñ] K ¡4 8 ý כ r Ç4  õ m Í < gX c l

F

g < Æ>   H e  ¦ Û ¼h Ë : q ½ ¨  E $ Ý ¼ 1B  Ð ½ ¨$ í  ¦, BFL(back focal length;E $ Ý ¼Ê êé ß \ " f CMOS image ac- tive % ò % i  t _   o )  H & h ü @  cutting coatings  ÷ &# Q e 

  H glass lid ¿ ºa  0.55 mmü < glass lid\ " f CMOS ac- tive area  t _   o  0.3 mm  H  ¦& ñ ÷ &# Q e  Ü ¼Ù ¼ Ð þ j è ô 

Ç 0.85 mm s  © s  ÷ & ¸2  ¤ #   ô  Ç . ¢ ¸ô  Ç 1/7   u  format \  @ /6 £ x   H ³ ðï  r oy  `  ¦ θ  Ð #  [ O > 3 l q ³ ð\  ¦ & ñ

  s \  @ /6 £ x   H  í& h  o  f

  H 6 £ § d  \  _ K    & ñ

 ) a .

f = y

tan θ (1)

¢

¸ô  Ç lens Ä »´ ò½ ¨ â  É r B j _  µ 1 ßl '   ¸  f -number_ 

&

ñ _   { 9  1 l x f   â \  @ /ô  Ç  í& h   o _  q  ÐÂ Ò'    & ñ

÷ &# Q   . s ü < ° ú s  F g < Æ> _  l  : r   ª s    & ñ ÷ &  s 



 ª \  ´ ú   H F g < Æ> \  ¦ ½ ¨$ í l  0 A #    H» ¡ ¤F g < Æ s  : r

\

 _ K  y   כ ¹ è_  / B GÒ  ¦ì ø Í â rõ  ¿ ºa \  ¦   & ñ ô  Ç . s X O 

>

   & ñ  ) a F g < Æ> \  q ½ ¨  > Ã º\  ¦ G 6 x #  þ j& h o õ 

&

ñ [3]`  ¦ :  x #  Table 1\  ] jr ô  Ç [ O >   ª `  ¦ ë ß 7 á ¤  ¸ 2



½ ¨ 7 Hë H Sae Mulli (The Korean Physical Society), Volume 49, Number 4, 2004 ¸ 10 Z 4, pp. 329∼332

½ ¨ 7 Hë H Sae Mulli (The Korean Physical Society), Volume 49, Number 4, 2004 ¸ 10 Z 4, pp. 329∼332

CMOS ï " e Ó Þ ° Ë Ñ] K ¡ System8 ý כ r Ç4 õ m Í < gX c lM ø n Ú

»ø ¶ B? ^∗ · + ä ÷ 7 B) o

Ò â @ / < Æ § o © & ñ Ð/ B N < ÆÂ Ò, Â Òí ß 608-737 (2004¸ 8 Z 4 6{ 9 ~ Ã Î6 £ §)

º F g è Ð" f 1/7 inch(diagonal = 3.1 mm) CMOS G ' p" f\ ¦ 6 x H ¸ { 9 : r B j 6 x F g < Æ>

Ô\ ¦ 6 x # ë ß 7 á ¤½ + Éë ß ô Ç õ \ ¦ % 3 % 3 .

Keywords: ¸ { 9 : r B j , F g < Æ> [ O > , CMOS G ' p" f, E $ Ý ¼

j H [ þ t # Q mobile phone\ © Ã Ì ) a B j F g < Æ> _

0 p x s l > r_ Ö r ï 8_ $ í 0 p x` ¦ 0 p x ¦ e Ü ¼ 9, & ³F MEGA/ å L B j : r s > hµ 1 Ï÷ & ¦ e Ü ¼ 9, size è+ þ A o, slim o ÷ & " f F g < Æ> _ [ O > r ½ ¨ ¸& h ô Ç> \ Ø Ô ¦ e

. n t _ O B j H ß ¼> E $ Ý ¼# Q! l r^ ¦ o , s p t G ' p

f(CCD, CMOS)Â Òü < ° ú É r Ù þ d Â Ò¾ ¡ §í ß \ O õ B j ¸o

¼, í Ðá Ô 2 ;' , Õ ªA i èá Ôà ÔJ ?# Q1 p x PC Å Ò l l í ß \ O

¦ | ¦ e Ü ¼ 9, Ê ë@ / : r, MP3 e ¦ Y Us # Q, Ö r ï 81 p x õ

½ + Ë " f Ã º´ ú § É r n t _ O ! Q Û ¼ ] j¾ ¡ §` ¦ ë ß [ þ t ¦ e

. Ê ë@ / : r õ n t _ O B j _ ½ + Ë¾ ¡ § B j : r É r & ³ F

n t _ O B j _ ó ø ÍB | ¾ Ó` ¦ 0 p x H r © Ø ½ Ó` ¦ Ð

Å Ò ¦ e Ü ¼ 9, 100ë ß o ès © _ MEGA/ å L B j : r_ 1

x © Ü ¼ Ð · ú ¡Ü ¼ Ð Ö r ï 8r © ` ¦ d ¦ e H + þ A¼ # s [1].

t _ O B j ü < Ê ë@ / : r ] j ¸\ O ^ [ þ t_ â Ô q tÜ ¼ Ð © E $

Ý ¼Â Ò_ × æ כ ¹$ í s D h\ v > Â Òy ÷ & ¦ e Ü ¼ 9, s כ É r B

j Ê ë@ / : r1 p x ¢ - a$ í ] j¾ ¡ §_ $ í 0 p x` ¦ ý aÄ º H כ ¹ Ü ¼ Ð

6 x l M :ë H s .

B j \ 6 x ÷ & H F g < Æ> ¸Ñ ý t_ l : r& h כ ¹½ ¨ ½ Ó Ü

¼ Ð É r s Ý ¼s . { 9 ì ø Í& h Ü ¼ Ð E $ Ý ¼ f â s 3 mm & ñ

¸ ÷ & 9, $ q 6 x, â | ¾ Ó o, q ½ ¨ o1 p x \ & h ½ + Ëô Ç e ¦ Û ¼ h Ë

: èF ´ ú §s 6 x ÷ & ¦ e . Õ ª Q e ¦ Û ¼h Ë : èF H

: r ¸ü < _ þ v ¸\ y l M :ë H \ èF & ñ \ × æ` ¦ l K

ô Ç . & ³F ´ ú §s 6 x ÷ & ¦ e H e ¦ Û ¼h Ë : > \ P É r OZ1000, PC, Zeonex, OKP4, TOPAS, APEL1 p x s e

[1,2]. : r 7 Hë H \ " f H H» ¡ ¤F g < Æ\ _ K F g < Æ> _ íl [ O

X <s ' \ ¦ Ã ºu K $ 3 & h ~ ½ ÓZ O Ü ¼ Ð & ñ ¦, íl [ O

data` ¦ l í Ð # 1/7 u CMOS(complementary metal-oxide- semiconductor) G ' p" f\ ¦ 0 Aô Ç q ½ ¨ e ¦ Û ¼ h Ë

: E $ Ý ¼\ ¦ s 6 xô Ç mobile phone camera F g < Æ> \ ¦ [ O > , ]

j % i .

II. ° Ë Ñ] K ¡4 8 ý כ r Ç4 õ m Í < gX c l

g < Æ> H e ¦ Û ¼h Ë : q ½ ¨ E $ Ý ¼ 1B Ð ½ ¨$ í ¦, BFL(back focal length;E $ Ý ¼Ê êé ß \ " f CMOS image ac- tive % ò % i t _ o ) H & h ü @ cutting coatings ÷ &# Q e

H glass lid ¿ ºa 0.55 mmü < glass lid\ " f CMOS ac- tive area t _ o 0.3 mm H ¦& ñ ÷ &# Q e Ü ¼Ù ¼ Ð þ j è ô

Ç 0.85 mm s © s ÷ & ¸2 ¤ # ô Ç . ¢ ¸ô Ç 1/7 u format \ @ /6 £ x H ³ ðï r oy ` ¦ θ Ð # [ O > 3 l q ³ ð\ ¦ & ñ

s \ @ /6 £ x H í& h o f

H 6 £ § d \ _ K & ñ

) a .

¸ô Ç lens Ä »´ ò½ ¨ â É r B j _ µ 1 ßl ' ¸ f -number_

ñ _ { 9 1 l x f â \ @ /ô Ç í& h o _ q ÐÂ Ò' & ñ

÷ &# Q . s ü < ° ú s F g < Æ> _ l : r ª s & ñ ÷ & s

ª \ ´ ú H F g < Æ> \ ¦ ½ ¨$ í l 0 A # H» ¡ ¤F g < Æ s : r

_ K y כ ¹ è_ / B GÒ ¦ì ø Í â rõ ¿ ºa \ ¦ & ñ ô Ç . s X O

& ñ ) a F g < Æ> \ q ½ ¨ > Ã º\ ¦ G 6 x # þ j& h o õ

ñ [3]` ¦ : x # Table 1\ ] jr ô Ç [ O > ª ` ¦ ë ß 7 á ¤ ¸ 2

¤ F g < Æ> \ ¦ ¢ - a$ í ô Ç [5].

-330- ô Ç² D GÓ ü t o < Æ rt “D hÓ ü t o ”, Volume 49, Number 4, 2004 ¸ 10 Z 4

] j¾ ¡ § ] j \ 6 xô Ç CMOS chip set format É r 1/7

u Ð" f Õ ª ½ ¨$ í + þ AI ü < F g < Æ& h : £ ¤$ í É r Fig. 1 ü < ° ú .

Glass lid \ 650 nm s © _ & h ü @ cutting coating` ¦

low pass filter % i ½ + É` ¦ # $ Å Ò Ã º @ /% i ` ¦ : x õ r v

¦, ¦Å Ò Ã º % ò % i ` ¦ é ß # CMOS t ¦ e H

© : £ ¤$ í $ \ ¦ ~ ½ Ót H % i ½ + É` ¦ { { © ¦ e Ü ¼ 9, Ò o Ã

º ] j x 9 ì rF g: £ ¤$ í ` ¦ ¦ 9ô Ç r F g % ò % i _

© (400 ∼ 650 nm)\ @ /ô Ç [ O > r × æ u H { 9 ì ø Í& h Ü ¼ Ð 537 nm 1.0 \ @ / # 460 nm 0.25, 610 nm 0.4, x 9 650 nm 0.3_ © @ /& h © Z > × æ u \ ¦ ¦ 9 # [ O > % i

. Fig. 2\ [ O > F g < Æ> _ layout\ ¦ [ O > data` ¦ Table 2 \ ? /% 3 . íl [ O > data Ð" f í& h o 2.1 mm\

/ # Ï ã J] X 0 p x ~ ½ Ó& ñ d k = k

ÐÂ Ò' r

= 2.1` ¦ Ø ¦µ 1 Ï& h Ü ¼ Ð # conic © Ã ºü < q ½ ¨ > Ã

º\ ¦ þ j& h o Ã º Ð # [ O > % i .

III. כ r Ç4 õ m Í < gX c l; c å ¾ Ë X ¢ Ä Z ØV Ä

t _ O G ' p" f6 x F g < Æ> H è+ þ A o slim o\ ¦ Æ Ò½ ¨ l 0 A # plastic q ½ ¨ E $ Ý ¼\ ¦ 6 x % i Ü ¼ 9, 1/7 u CMOS G ' p" f_ ½ © É r 2.15 × 1.657 mm

s Ù ¼ Ð @ /y _

U ´s F g < Æ> _ © \ @ /6 £ x ÷ &Ù ¼ Ð image circle size

2.72 mm ÷ & ¸2 ¤ % i .

Fig. 2 H þ j& h [ O > ) a F g < Æ> \ @ /ô Ç F g ¸ Ð" f F g

<

Æ> _ ½ ¨$ í + þ AI ü < l ½ ¨ [ O > r 9 כ ¹ô Ç l : r « Ñ Ð 6

x ) a . Fig. 3\ Table 2\ _ K ] j ) a q ½ ¨ F g < Æ> _

+ þ A © ` ¦ ¨ î H ~ ½ ÓZ O Ü ¼ Ð" f Taylor Hobson surface profiler\ ¦ s 6 x # 8 £ ¤& ñ ô Ç õ \ ¦ ? / ¦ e . Ä »´ ò

½ ¨ 7 Hë H CMOS G ' p" f6 x F g < Æ System_ [ O > x 9 ] j l Õ ü t – ^ 7 á x I · & ñ 6 x$ 3 -331-

¨ â ? /\ peak to valley° ú כs ±0.1 µm s ? / Ð ª ñô Ç + þ A

© ` ¦ Ä »t ¦ e 6 £ §` ¦ · ú Ã º e .