DOT MATRIX DISPLAY FYM-23881CDxx-xx

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DOT MATRIX DISPLAY FYM-23881CDxx-xx

REV NO: V.1 PAGE: 1 OF 4 APPROVED : Ying Liming CHECKED :Hu Wei DRAWN: Zhan Wenqi

■ Features:

・60.20mm (2.3”) F 5.0 dot matrix LED display.

・Low current operation.

・Excellent character apperance.

・Easy mounting on P.C.boards or sockets.

・I.C.compatible.

■ Part No.:

Common Cathode Iv TYP.(mcd) Common Anode Iv TYP.(mcd)

FYM-23881CSG-XX 768 FYM-23881DSG-XX 768

FYM-23881CEG-XX 640 FYM-23881DEG-XX 640

FYM-23881CURUG-XX 1536 FYM-23881DURUG-XX 1536

FYM-23881CUEPG-XX 1536 FYM-23881DUEPG-XX 1536

■ Description:

・Color Code & Chip characteristics: (Test Condition: IF=20mA)

Forward Voltage(VF)

Unit:V Emitting Color Dice

Material

Peak Wave Length

(λ^P)

Spectral Line halfwidth

(△λ 1/2) Typ Max

Luminous Intensity

(Iv) Unit:ucd

S Hi Red GaAlAs/GaAs,SH 660nm 20nm 1.85 2.20 3500

E Orange GaAsP 635nm 35nm 2.10 2.50 2500

G Green GaP 570nm 30nm 2.20 2.50 2500

U

R Ultra Red AlGaAs,DDH 660nm 20nm 1.95 2.20 7000

U

E Ultra Orange AlGaInP 630nm 20nm 2.10 2.50 7000

U

G Ultra Green AlGaInP 574nm 30nm 2.20 2.50 5000

P G

Ultra Pure

Green AlGaInP 525nm 36nm 3.80 4.50 5000

・-XX: Surface / Lens color：

Number 0 1 2 3 4 5

Ref Surface Color White Black Gray Red Green Epoxy Color Water

clear

White diffused

Red Diffused

Green Diffused

Yellow Diffused

[email protected] http://www.foryard-led.ru

Radiotech-Trade (+7 495) 795-08-05

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■ Package configuration & Internal circuit diagram:

Notes:

・All dimensions are in millimeters (inches)

・Tolerance is ±0.25(0.01")unless otherwise noted.

・Specificaions are subject to change whitout notice.

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■ Electrical-optical characteristics: (Ta=25℃)

Parameter Symbol AlGaAs GaAsP GaP(Green

) AlGaInP InGaN Unit Power

Dissipation Pad 60 80 80 75 120 mW

Peak Forward

Current * Ipf 150 150 150 150 100 mA

Continuous

Forward Current Iaf 25 30 30 30 30 mA

Notes:

・* Test Condition = Duty 0.1,10KHZ

■ Absolute maximum ratings (Ta=25℃)

Reverse Voltage 5V

Reverse Current 20µA

Operating Temperature Range -40℃to+85℃

Storage Temperature Range -40℃to+85℃

Lead Solder Temperature (1.6mm(1/16”)from body) 230℃ for 5 Seconds

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■ Typical electrical-optical characteristics curves:

1.0

0.5

0

350 400 450 500 550 600 650 700 750 800 850 900 950 1000

(A) (B) (C) (D) (2) (3) (8) (4) (1) (6) (5) (9) (10)

Wavelength(nm) RELATIVE INTENSITY Vs WAVELENGTH(λ p)

(1) - GaAsP/GaAs 655nm/Red (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow

(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red

(6) - GaAlAs/GaAs 660nm/Super Red (8) - GaAsP/GaP 610nm/Super Red

(9) - GaAlAs 880nm

(10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue

(B) - InGaN/SiC 470nm/Blue (C) -

(D) -

InGaN/SiC 505nm/Ultra Green InGaAl/SiC 525nm/Ultra Green

50

40

30

20

10

0

1.2 1.6 2.0 2.4 2.6 3.0 1 64 58 23

4.0

3.0

2.0

1.0

0

20 40 60 80 100

1

5 B

50

40

30

20

10

0 20 40 60 80 100

1 62,4,8,A

3 5

3 2 1

0.5

0.2

0.1-30 -20 -10 0 10 20 30 40 5 0 60 7 0 1

5 42 3

10 98 7 6 5

4

3

2

1

1 10 100 1000 10,000

10KHz 3KHz

1KHz 300KHz

100KHz F-REFRESH RATE

100KHz 30KHz

10KHz 3KHz

1KHz 300Hz

100Hz 109

87 6 5

4 3

2

1 1 10 100 1000 10,000

FORWARD VOLTAGE (Vf) FORWARD CURRENT VS.

FORWARD VOLTAGE

RELATIVE LUMINOUS INTENSITY VS. FORWARD CURRENT

AMBIENT TEMPERATURE Ta( )℃ FORWARD CURRENT VS. AMBIENT TEMPERATURE

tp-PULSE DURATION uS (1,2,3,4,6,8,B.D.J.K)

NOTE:25℃free air temperature unless otherwise specified tp-PULSE DURATION uS

FORWARD CURRENT(mA)

FORWARD CURRENT (mA)

RELATIVE LUMINOUS INTENSITY FORWARD CURRENT(mA)

RELATIVE LUMINOUS INTENSITY

AMBIENT TEMPERATURE Ta(℃)

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Ipeak MAX.IDC MAX. Ipeak MAX.IDC MAX.