Volume 62, Number 3, 2012¸ 3 Z 4, pp. 285∼288
New Physics: Sae Mulli (The Korean Physical Society), DOI: 10.3938/NPSM.62.285
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d # Q: 0 A © ] X ^ (topological insulator), n | Ã Ì ` Ø Ôp : r (Dirac fermion), Bi
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3, l $ ½ Ó, f . Ë $ ½ Ó
Transport Properties of Defect-controlled Bi 2 Te 3 Single Crystals: Fingerprint of Surface Dirac Electrons
Ji-Woong Han · Heon-Jung Kim ∗
Department of Physics, College of Natural Science, Daegu University, Gyeongsan 712-714
M. Sasaki
Department of Physics, Faculty of Science, Yamagata University, Kojirakawa, Yamagata 990-8560 Japan (Received 12 December 2011 : revised 26 December 2011 : accepted 2 March 2012)
We show that in the three-dimensional (3D) topological insulator Bi
2Te
3, the nature of the surface is revealed as a quantization of the motion in Dirac fermions due to their confinement at the surface. The consequence of this z-quantization is an oscillation in the magnetoresistance (MR) with a periodicity proportional to the magnetic field. We demonstrate that based on complete single Dirac theory at the surface, where disorder is properly taken into account, the thickness of the surface state or the fundamental length scale of a topologically nontrivial state can be extracted from the oscillating part of the MR data. The same theoretical framework also explains both the nonoscillating part of the MR and the Hall resistance at the low field region, showing that the topological contribution is important.
PACS numbers: 72.20.-i,72.15.-v
Keywords: Topological insulator, Dirac fermion, Bi
2Te
3, magnetoresistance, Hall resistance
∗