7 Z 4, pp. 757∼762
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Temperature-dependence of the Linewidths for the Wurtzite and the Sphalerite Structures of 2-dimensional GaN
Haeng Ki Lee
Department of Radiotechnology, Daegu Polytechnic College University, Daegu 706-711
Nam Lyong Kang ∗
Department of Nanomedical Engineering, Pusan National University, Miryang 627-706
Sang Don Choi
Department of Physics, Kyungpook National University, Daegu 702-701 (Received 8 April, 2010 : revised 26 May, 2010 : accepted 13 July, 2010)
The temperature dependences of the linewidths for 2-dimensional wurtzite and sphalerite GaN, calculated by using the many-body projection technique, are compared. The half widths are larger in the wurtzite structure for fixed values of the well width and the electron density, and the differences increase with the temperature of the systems. The difference is more remarkable for larger electron density and disappears monotonically as temperature discreases.
PACS numbers: 72.10.Di, 72.80.Ey, 77.65.Bn
Keywords: Absorption linewidth, Wurtzite and sphalerite structures, Gallium nitride, Temperature depen- dence
∗
E-mail: [email protected]
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Table 1. Physical parameters of GaN.
Wurtzite structure Sphalerite (zinc blende) structure Acoustic phonon energy
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