Evaluation of Graphene Oxide Reduced by Using a NH 3 Plasma Treatment
Sung-Youp Lee · Ju-Hyun Son · Hyeong-Rag Lee ∗
Department of Physics, Kyungpook National University, Daegu 702-701, Korea (Received 9 December 2014 : revised 5 February 2015 : accepted 11 February 2015)
In this study, reduced graphene-oxide (r-GO) thin films were fabricated using an ammonia (NH
3) plasma reduction method at a temperature of 150
◦C. The reduction of the GO thin film by using an NH
3plasma treatment began in less than 1 minute. As the treatment time increased, the surfaces of the reduced GO films were flattened slightly. The sheet resistances of the r-GO films could not be measured for plasma treatment times below 5 min, but the value of the resistance was 158.93 MΩ/¡ for a treatment time of 6 min. From these results, we conjecture that plasma treatment for a short time only removes the functional groups containing oxygen and that treatments for longer than 6 min not only remove the functional groups but also restore defects in the r-GO films.
PACS numbers: 81.05.ue, 52.25.-b
Keywords: Plasma, Ammonia, Graphene, Reduced graphene-oxide
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PACS numbers: 81.05.ue, 52.25.-b
Keywords: e ¦ Û ¼ , ¸m , Õ ªA 2 ;, ¨ 8 " é ¶ ) a í ß o Õ ªA 2 ;
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