In conclusion, we found a sophisticated way to find the crystal orientation of GeSe by using optical contrast method, and this method was consistent with the TEM image. Sputter electrode deposition is one way to effectively reduce the contact barrier, which is one of the most important parts in device applications. Firstly, we characterize the thermoelectric properties with nano-thickness single GeSe flake. Furthermore, we measure the temperature-dependent Seebeck coefficient, which is effectively tuning by electrostatic doping—i.e. controlling the carrier concentration. We strongly believe that this research has contributed greatly to the application of thermoelectric device with IV-VI orthorhombic compounds including GeSe in future.
62
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Appendix
A. The Right permission from ACS (American Chemical Society) publisher.
B. The Right permission from “Elsevier” publisher.
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