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55Mn
Temperature Dependence of the Linewidths in Mn 2+ -doped Wurtzite GaN Semiconductors by EPR
Haeng-Ki Lee · Kyoung-Keun Kim
Department of Radiotechnology, Daegu Polytechnic College University, Daegu 706-711
Jung-Il Park ∗ · Hyeong-Rag Lee
Nano Application Laboratory, Department of Physics, Kyungpook National University, Daegu 702-701
(Received 16 June 2011 : revised 14 October 2011 : accepted 7 November 2011)
We calculated the EPR lineshape function. The linewidths of a Mn
2+-doped GaN semiconductor with a Wurtzite structure was studied as a function of the temperature at a frequency of ν = 9.5 GHz (X-band) in the presence of external field radiation. The temperature dependence of the linewidth was obtained with the projection operator method proposed by Mori and Kawabata. With this method, compared to others, the linewidth was easier to obtain because it could be found directly by using the projection operator.
PACS numbers: 76.20.+q, 76.30.-v
Keywords: Electron paramagnetic resonance (EPR), Projection operator, Spin Hamiltonian, Wurtzite struc- ture, GaN,
55Mn
∗