Effects of Oxygen-related Defects on Green Luminescence from ZnO Thin Films
MyeongWook Bae · Seunghun Jang · Moonsup Han ∗
Department of Physics, University of Seoul, Seoul 130-743, Korea (Received 6 January 2014 : revised 14 February 2014 : accepted 17 February 2014)
Zinc-oxide (ZnO) films were deposited by using an RF magnetron sputtering method. By con- trolling the ratio of Ar to O
2gases, we synthesized two types of films. Then, we performed furnace annealing at 900
◦C under ambient O
2or N
2gases. X-ray diffraction (XRD), X-ray photoelec- tron spectroscopy (XPS), and photoluminescence (PL) techniques were applied to characterize the structural and the optical properties of the ZnO films. When a ZnO film with low oxygen content is initially deposited, the crystal structure is well formed in the transversal, as well as the longitudinal, direction. Also, a sufficient supply of oxygen molecules by O
2annealing promoted the formations of antisite oxygen and oxygen interstitial defects. From the analyses of the PL and the XPS data for all samples, we ascribe the main origin of green emis-sion from the ZnO film to oxygen-related defects. The type of oxygen-related defect caused by O
2post-annealing was determined by the initial conditions of the fabrication and affected luminescent property in the ZnO film. The results of this work should be important for the development of green-light-emitting diodes with ZnO thin films.
PACS numbers: 78.55.-m, 78.20.-e, 68.35.Dv, 82.80.Pv
Keywords: ZnO thin film, Photoluminescence, Oxygen related defect, X-ray photoelectron spectroscopy
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(2014¸ 1 Z 4 6{ 9 ~ Ã Î6 £ §, 2014¸ 2 Z 4 14{ 9 Ã º& ñ : r ~ Ã Î6 £ §, 2014¸ 2 Z 4 17{ 9 > F S X & ñ )
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2Û ¼( ' a A Û ¼_ q Ö
¦` ¦ ¸] X # ¿ º 7 á x À Ó_ ZnO ~ Ã Ì} ` ¦ ë ß [ þ t% 3 ¦, í ß è x 9 | 9 è ì r 0 Al \ " f 900
◦C ¸| Ü ¼ Ð y y \ P
%
o \ ¦ z ´r % i . ½ ¨ ¸ x 9 F g < Æ& h : £ ¤$ í ` ¦ ì r$ 3 l 0 AK " f X-ray Diffraction, X-ray Photoelectron Spectroscopy (XPS), Photoluminescence (PL) 8 £ ¤& ñ ` ¦ % i . í ß èÅ Ò{ 9 | ¾ Ós & h É r r « Ñ_ â Ä º, 7 £ x Ã Ì f
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%
o Ê ê\ ¸ r « Ñ ? / & ñ ½ ¨ ¸ ¸ ú Ä »t H d õ 1 l x r \ ZnO ~ Ã Ì} î ß Ü ¼ Ð í ß è / B N/ å L s " é ¶ Ö ¸ > s À Ò# Q f
Ü ¼ Ð+ Antisite í ß è x 9 Oxygen Interstitial < Ê Ò q t$ í s Ö ¸ µ 1 Ï > { 9 # Qz ` ¦ S X % i . XPS x 9 PL 8 £ ¤& ñ õ \ ¦ ì r$ 3 # \ P % o õ & ñ × æ Ò q t$ í ) a í ß è ' aº < Ê[ þ t s ZnO ~ Ã Ì} ? / 0 l qÒ oµ 1 Ï F g _ Å Òכ ¹ ô
Ç " é ¶ s ¦ ó ø Íé ß % i . 7 £ x à Ì~ ½ ÓZ O x 9 ¸| \ 7 £ x Ã Ì ¢ - a « Ñ Ê ê í ß èì r 0 Al Ê ê\ P % o \ _ ô Ç í ß
è ' aº < Ê_ 7 á x À Ó x 9 + þ A$ í ½ © ¸ & ñ ÷ & 9 s H ~ Ã Ì} _ µ 1 Ï F g y © ¸\ f ] X & h % ò ¾ Ó` ¦ Å Ò% 3 . s
Qô Ç õ H ZnO ~ Ã Ì} ` ¦ s 6 x ô Ç 0 l qÒ oµ 1 Ï F g è ] j r × æ כ ¹ > ¦ 9÷ &# Q ½ + É כ ¹ è ¦ ó ø Íé ß ) a .
256
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PACS numbers: 78.55.-m, 78.20.-e, 68.35.Dv, 82.80.Pv Keywords: ZnO~ Ã Ì} , F g # l µ 1 Ï F g, < Ê, F g ì rF g
I. " e  ] Ø
f
] X ;s + þ A í ß oÓ ü t Ð · ú 9 Zinc oxide (ZnO) ~ Ã Ì}
É
r µ 1 Ï F g ´ òÖ ¦ s Ä ºÃ º ¦ © : r \ " f 3.37 eV_ q §& h V ,
É r ½ × ¼Ì s (band gap)` ¦ t 9, Zinc selenide, Zinc sul- fide, Gallium nitride ü < ° ú É r É r o½ + ËÓ ü t ì ø Í ¸^ [ þ t \ q K
" f 60 meV_ H " l or : r ½ + Ë\ -t \ ¦ t ¦ e # Q F g
è _ µ 1 Ï F g F « Ñ Ð+ Å Ò3 l q ~ Ã Î ¦ e [1, 2]. ÷ r ë ß m
, Light Emitting Eiode (LED), Laser Diode (LD), ü
@ Detector, @ / & h n Û ¼e ¦ Y Us , ³ ð ò ø Í$ í 9 ' (Sur- face Acoustic Wave Device), Õ ªo ¦ Solar cell_ Trans- parent Conducting Oxide (TCO) \ s Ø Ôl t ª ô Ç
~
½ Ó \ 6 £ x6 x 0 p x$ í s ] jr ÷ & ¦ e # Q Ö ¸ µ 1 Ïô Ç ½ ¨ '
÷ & ¦ e [3,4].
ZnO ~ Ã Ì} ` ¦ $ í © r v H ~ ½ ÓZ O Ü ¼ Ð H Sputtering [5], Molecular Beam Epitaxy (MBE) [6], Pulsed Laser De- position (PLD) [7], Chemical Vapor Deposition (CVD) [8] 1 p x õ ° ú s ª ô Ç ~ ½ ÓZ O [ þ t s s 6 x ÷ & ¦ e . s ü < ° ú s
ª ô Ç / B N& ñ ~ ½ ÓZ O \ _ K " f ë ß [ þ t # Q ZnO ~ Ã Ì} É r 7 £ x
Ã
Ì~ ½ ÓZ O x 9 ¸| \ " f ~ Ã Ì} ? /Â Ò\ # Q 7 á x À Ó_
< Ê (Defect)s Ò q t$ í ÷ & 9 s Qô Ç < Ês F g < Æ x 9 ½ ¨ ¸& h Ó
ü t$ í \ B Ä º × æ כ ¹ô Ç % i ½ + É` ¦ ¦ e H כ Ü ¼ Ð Ð ¦÷ & ¦ e
[9–14]. ZnO ~ Ã Ì} ? /\ + þ A$ í s 0 p x ô Ç < ÊÜ ¼ Ð" f
H g Ë >{ 9 + þ A Zn (Zinc Interstitial: Zn i ), Zn / B N/ B N (Zinc Va- cancy: V Zn ), O / B N/ B N (Oxygen Vacancy: V o ), g Ë >{ 9 + þ A í ß
è (Oxygen Interstitial: O i ), Antisite í ß è (O Zn ) 1 p x s e
Ü ¼ 9 s Qô Ç < Ê ½ ¨ ¸[ þ t É r ZnO _ ½ × ¼Ì s s \ y l
É r ² D G F o ) a \ -t ï r 0 A\ ¦ + þ A$ í " f r F g % ò
%
i \ " f_ µ 1 Ï F g \ × æ כ ¹ô Ç % i ½ + É` ¦ ô Ç ¦ · ú 94 R e [10, 11].
:
£
¤ y , ZnO ~ Ã Ì} ? /_ < Ê\ _ ô Ç r F g % ò % i _ µ 1 Ï F
g î r X <\ " f 510 - 550 nm % ò % i _ 0 l qÒ o µ 1 Ï F g (Green Luminescence) \ @ /ô Ç ½ ¨ H # Q ½ ¨ [ þ t \ _ K " f
Ð ¦÷ &% 3 ¦, µ 1 Ï F g _ " é ¶ (origin)\ @ /ô Ç ª ô Ç ¸4 S q[ þ t s
] jî ß ÷ &% 3 . K. Vanheusden et al. [12] É r Electron Paramagnetic Resonance (EPR) 8 £ ¤& ñ ` ¦ : x K V O 0 l q Ò
oµ 1 Ï F g _ " é ¶ s | ¨ c à º e 6 £ §` ¦ ] jî ß Ù þ ¡ ¦, Reynolds et al.
[13] ü < Kohan et al. [14] É r V Zn s 0 l qÒ oµ 1 Ï F g _ " é ¶ s
¦ Å Ò © Ù þ ¡ . Sun [15]1 p x _ full-potential linear muffin- tin orbital (FP-LMTO) ~ ½ ÓZ O ` ¦ & h 6 x # ZnO_ ¦Ä »
∗