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Light and bias stability of c-IGO TFTs fabricated by rf magnetron sputtering

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제 50 회 동계학술대회 265

TW-P015

Reactive Magnetron Sputtering 법을 이용한

SnO 투명산화물반도체 합성 및 특성분석

이승희, 김정주, 허영우, 이준형

경북대학교 신소재공학부

여러 application에 적용하기 위하여 p-type SnO 박막과 전극 간의 접촉 저항을 분석이 필요하였다. 이를 Transmission Line Method(TLM) 패턴 소자를 제작한 후 전기적 특성을 분석함으로써 알 수 있었다.

Si/SiO2 기판에 Reactive Magnetron Sputtering법을 이용하여 c축 우선 배향된 SnO를 100nm 증착하고

photolithography 공정을 통해 전극을 패턴화하여 100nm 두께로 증착하였다. 전극 간 거리는 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, 1024㎛로 각각 2배씩 증가하는 패턴이고 폭 W는 300㎛ 이다. p-type SnO 의 경우, work function이 4.8eV이기 때문에 전극과 ohmic contact이 되기 위해서는 4.8eV보다 높은 work function 값을 가지는 전극이 필요하였다. 이 조건과 맞는 후보로 Ni(5.15eV), ITO(5.3eV)를 설정한 후 소자를 제작

하였다. 제작된 소자는 열처리 하지 않은 소자와 Rapid Thermal Annealing(RTA) 장비에서 100oC, 200oC,

300oC에서 각각 1분씩 열처리한 소자의 특성을 분석하였다. 열처리 하지 않은 소자의 경우 Ni 전극의

specific contact resistance는 3.42E-2Ω의 값을 나타내었고, ITO의 경우 3.62E-2Ω값을 나타내었다.

Keywords: p-type SnO, Contact resistance, Transmission Line Method(TLM)

TW-P016

Light and bias stability of c-IGO TFTs fabricated

by rf magnetron sputtering

Kwang-Min Jo, Joon-Hyung Lee, Jeong-Joo Kim, Young-Woo Heo

Kyungpook National University

Oxide thin film transistors (TFTs) have attracted considerable interest for gate diver and pixel switching devices of the active matrix (AM) liquid crystal display (LCD) and organic light emitting diode (OLED) display because of their high field effect mobility, transparency in visible light region, and low temperature processing below 300oC. Recently, oxide TFTs with polycrystalline In-Ga-O(IGO) channel layer reported by

Ebata. et. al. showed a amazing field effect mobility of 39.1 cm2/Vs. The reason having high field effect mobility of IGO TFTs is because In2O3 has a bixbyite structure in which linear chains of edge sharing InO6

octahedral are isotropic.

In this work, we investigated the characteristics and the effects of oxygen partial pressure significantly changed the IGO thin-films and IGO TFTs transfer characteristics. IGO thin-film were fabricated by rf-magnetron sputtering with different oxygen partial pressure (O2/(Ar+O2), Po2)ratios. IGO thin film Varies

depending on the oxygen partial pressure of 0.1%, 1%, 3%, 5%, 10% have been some significant changes in the electrical characteristics. Also the IGO TFTs VTH value conspicuously shifted in the positive direction, from -8 to 11V as the Po2 increased from 1% to 10%. At Po2 was 5%, IGO TFTs showed a high drain current

on/off ratio of ~108, a field-effect mobility of 84cm2/Vs, a threshold voltage of 1.5V, and a subthreshold slpe(SS) of 0.2V/decade from log(IDS) vs VGS.

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