Photovoltaic performances of flat SiMPF-based TSCs (a) J-V characteristics and (b) EQE of transparent solar cells with controlled height. Schematic representation of the interfaces of (d) continuous P(VDF-TrFE)/Si and (e) crystalline P(VDF-TrFE)/Si.
Interfaces
- Definition of interface
- Types of interfaces
- Solid / Solid interface
- Solid / Solid interface for electronic applications
- References
Line analysis of the PFM amplitude image (Figure 31c) clearly shows that the polarization is induced only in the network P (VDF-TrFE) region (excluding pores). In addition, the porous structure of the crystalline P(VDF-TrFE) thin film results in Si0 (Si) and Si4+ (SiO2) peaks from the surface before the etching (black line, Figure 43a).
Interfaces in Si solar cells
Si / Si interfaces
The number of carriers in the conduction and valence bands without external bias is called the equilibrium concentration of carriers. Therefore, the number of majority carriers in a semiconductor does not change greatly under light.
Si / Metal hetero-interfaces
For this reason, energy levels in the middle of the band gap are very effective for recombination. The minority carrier lifetime of the material, denoted τn or τp, is the average time spent in the excited state after electron-hole generation before the carrier recombines.
Si / Oxide hetero-interfaces
Based on the surface resistivity, the output loss due to the emitter resistance can be calculated as a function of the finger distance at the top contact. Among them, Al2O3 is considered to be the most preferred way in general to adapt to the Si solar cells due to its excellent passivation effect.
Si / Organic hetero-interfaces
Thus, state-of-the-art solar cells such as the passivated back-emitting cell (PERC heterojunction with a thin internal layer (HIT)[22] or back-interconnected contacts (IBC)[23] with photovoltaic conversion efficiency ( PCE) of 23 ~ 26% have been developed, minimizing surface recombinations, so new strategies and insights are needed to improve the quality and performance of textured-Si / PEDOT:PSS solar cells.
Transfer of ultrathin molybdenum disulfide and transparent nanomesh electrode to silicon for efficient heterojunction solar cells. High efficiency hybrid PEDOT:PSS/nanostructured silicon junction Schottky doped-free back contact solar cells.
Si / PEDOT:PSS hetero-interfaces for transparent solar cells
Research background
Through this strategy, some groups demonstrated different colored transparent solar cells with low PCE of ~3-7% at medium transparency [15-19]. Many groups have realized halide perovskite-based transparent solar cells by controlling the thickness, transport layer and composition of the perovskite.
Experimental details
Preparation of independently sloped SiMPF: After dry etching of residual PDMS, only the top of the AlO coated Si microwires is exposed. For the absorption and reflection spectra of the microwires and the time-resolved reflected light, simulations were performed with the same parameters used in the experiments.
Results and Discussion
Excess PDMS residue on top of the SiMW was removed during the second spin coating. The angled tip of the microwire causes the light in the microwire to follow the zigzag path (path "A" in Figure 14b) or bounce back to the adjacent microwire (path "B" in Figure 14b).
Conclusion
Recent advances in semi-transparent polymer and perovskite solar cells for power-generating window applications. Fully solution-processed semi-transparent perovskite solar cells with spray-coated silver nanowires/ZnO composite top electrode. Low-cost semi-transparent copper sulfide electrode for indium-tin-oxide-free perovskite solar cells.
In situ prepared transparent polyaniline electrode and its application in bifacial dye-sensitized solar cells. Multifunctional Zn(II)/Cd(II) metal complexes for tunable luminescence properties and high efficiency dye-sensitized solar cells. Performance of transparent solar cells based on the inclined SiMPF. a) Optical images of free-standing inclined SiMPF.
Photovoltaic parameters of transparent solar cells in the bending state with different bending radii.
Si / P(VDF-TrFE) hetero-interface for interlayer in solar cells
Research background
The study, to the best of our knowledge, is the pioneer report of porous P(VDF-TrFE) films assembled by spin coating and used to improve the efficiency of organic and inorganic hybrid photovoltaic solar cells. When used as a gap, the pore size and porosity of P(VDF-TrFE) would be controlled by the amount of water added to it, by affecting the photovoltaic efficiency of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/Si hybrid solar cells, with a P(VDF-TrFE) gap, can be easily manipulated through the journey from positive to negative. The principle of obtaining improved efficiency of PEDOT:PSS/P(VDF-TrFE)/n-Si solar cells was explained based on FDTD simulations.
Experimental details
The principle of getting improved efficiency of PEDOT:PSS/P(VDF-TrFE)/n-Si solar cells was explained based on FDTD simulations. Brucker) was used to record ferroelectric area. Highly conductive PEDOT:PSS solution including 9wt ethylene glycol, 0.1% Triton X-100 was washed on the P(VDF-TrFE)/Si substrates, and the fabricated composites of PEDOT:PSS/P(VDF-TrFE)/Si were heated at 125 °C for 10 min. Silver electrodes were deposited into the PEDOT:PSS layer using shadow masks (10%, 950 μm) and electron beam evaporators.
The static latent energy of PEDOT:PSS/P(VDF-TrFE)/Si solar cells was mapped using COMSOL's closed circuit modeling software equipped with semiconductors, AC/DC and piezoelectric modules. Although this includes Ti/Au back contact, the Ag top electrode was not taken into account since the PEDOT:PSS can act as an electrode and the hole-bearing layer of the short-key joint.
Results and Discussion
In contrast, PCE is affected by the additional electric field induced by the ferroelectric thin film in the peripheral void region. This coercive field was significantly higher than the bias voltage of the porous P(VDF-TrFE) thin film used in this study due to the different crystallinity of the porous and continuous P(VDF-TrFE) thin films. In addition, since the P(VDF-TrFE) layer can prevent moisture from penetrating the junction, the stability of the hybrid solar cell is also improved.
The open circuit voltage depends on the saturation current J0 and the photogeneration current JL of the solar cell (equation 1) [45]. The geometry of the PEDOT:PSS/P(VDF-TrFE)/Si hybrid solar cell considered in this simulation is shown in Fig.
Conclusion
Reversible behavior of the pole effect (a) J-V characteristics of PEDOT:PSS/P(VDF-TrFE)/n-Si hybrid solar cell. A silver electrode was deposited on top of the PEDOT:PSS thin film with a shadow mask (Areal coverage μm of spacing between the silver contacts). In addition, the crystallinity of the film on the surface is not maintained at the interface.
The GIXD measurement reveals the extremely excellent crystallinity of the porous P(VDF-TrFE) thin films. Effect of annealing and properties of Al2O3 on the hydrogen-induced passivation of the Si/SiO2 interface.
Si / P(VDF-TrFE) hetero-interface for surface field layer in solar cells
Research background
16-21] In this case, the electric field is established by a fixed charge density from the dielectric film leading to the band bending of Si. Thus, the modern Si solar cells such as passivated emitter back cell (PERC), heterojunction with an intrinsic thin layer (HIT) or interdigitated back contacts (IBC) with photovoltaic conversion efficiency (PCE) of 23 ~ 26% have been developed with the device architectures that draw advantage of a-Si:H, oxides or nitrides, which minimizes the recombinations at the surfaces. Alternatively, low-temperature processable organics via dissolution process have recently been revisited in Si-based solar cells.
In approaches using organics as the junction layer, PEDOT:PSS as a hole-selective layer is the most promising partner of Si. [32-34] The high work function of PEDOT:PSS forms Schottky junctions with n-type Si (n- Si). , separating the photogenerated electrons and holes and creating a photocurrent. To date, n-Si / PEDOT:PSS hybrid solar cells have exhibited PCE of more than 16% through advanced surface texturing on Si and interfacial engineering between Si and PEDOT:PSS.[35-38] To achieve a 16%. with the relatively high PCE of the device, a doping or vacuum process or high-temperature process involving deposition of an a-Si:H or oxide layer on the back side of Si is usually associated. However, this ignores the original motivation of the hybrid. solar cells that produce Si-based photovoltaics in a simple and inexpensive way.
Experimental details
A ~2 nm thick layer of Al2O3 was deposited on a black Si substrate by Cluster ALD (Atomic premium, CN1) and then the samples were annealed at 400 ◦C for 20 min in a gas environment (5% H2 in N2) to activate them. surface passivation. A porous P(VDF-TrFE) thin film was spin-coated on the underside of Si and Ti(20 nm)/Au(200 nm) was deposited as bottom electrodes. Finally, a porous P(VDF-TrFE) thin film was spin-coated on the Si underside, followed by Au (500 nm) deposition as bottom contacts.
The mains voltage was fixed at 70 V and the corona voltage applied to the needle was varied from 0 kV to 20 kV for positive charging. Conversely, for negative charging, -70 V for the mains voltages and 0 kV to -20 kV for corona voltages were applied.
Results and Discussion
Therefore, the level of passivation is similar to the condition where only SiOx is present, which is in excellent agreement with the presence of internal negative charges of P(VDF-TrFE) at the interface. The bonding between PEDOT:PSS and n-Si was optimized prior to the integration of the P(VDF-TrFE) thin film on the back side of the PEDOT:PSS / Si (PSC) solar cells. The back surface field mechanism due to the deposited P(VDF-TrFE) layer was elucidated via FDTD simulation.
To understand the effect of the porous ferroelectric thin film more clearly, the line scan of the electrical potential of Si is shown in Figure 49e. On the other hand, at the back side, the holes are repelled and electrons can easily approach the bottom electrodes due to the electric field of the P(VDF-TrFE), which represents the negative potential.
Conclusion
It is worth mentioning that the performance of HSC with P(VDF-TrFE) is superior to that of HSC with aluminum (Al) BSF, which is the common strategy to improve the performance of p-Si solar cells ( Figure 53). Al BSF is obtained at high temperature with in-diffusion of a high concentration of dopants to the back side of Si, forming an additional electric field. Therefore, the passivation effect of SiOx/P(VDF-TrFE) is maintained in 1000 hours moist heat test while retaining 95% of its original performance.
In addition, the polarization effect of P(VDF-TrFE) is also stable for 1000 hours of moist heat test and there is no significant difference in performance. This work may open the possibility of organic / Si solar cells with new passivation techniques in a cheap and simple way that surpasses traditional Si photovoltaics with inorganic ones.
Influence of the recombination parameters at the Si/SiO2 interface on the ideality of the dark current of high efficiency silicon solar cells. Self-assembled, highly crystalline porous ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) interlayer for Si/organic hybrid solar cells. High efficiency (>17%) Si-organic hybrid solar cells by simultaneous structural, electrical and interface engineering via low-temperature processes.
Choi "An ambipolar poly(vinylidene fluoride-co-trifluoroethylene) passivated back surface field layer for high efficiency organic / Si hybrid solar cells" Submitted to Energy &. Kang, M.J. Im "Silicon Micro Wire / Composite Manufacturing Method for Colorless Transparent Flexible Solar" Cells” (KR.
