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Extraction of Passive Device Model Parameters Using Genetic Algorithms

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Extraction of Passive Device Model Parameters Using Genetic Algorithms

Ilgu Yuna), Lawrence A. Carastro, Ravi Poddar, Martin A. Brooke, Gary S. May, Kyung-Sook Hyun, and Kwang Eui Pyun

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Probe Pad Building Block

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R_pad = 0.1E-3 Ohm L_pad = 0.2E-10 H C_pad = 0.1E-14 F

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Uncoupled LineBuilding Block C_cou = 1.2E-15 F R_pad = 0.08 Ohm L_pad = 1E-11 H C_pad = 2.7E-15 F

(a)

R_pad = 0.08 Ohm L_pad = 1.2E-11 H C_pad = 3.6E-15 F

C_cou = 1.2E-15 F R_pad = 0.07 Ohm L_pad = 1E-11 H C_pad = 2.9E-15 F

C2 = 3.3E-15 F R = 0.6 Ohm L = 1E-10 H C = 7.1E-15 F Probe Pad Building Block

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Probe Pad Building Block

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R_pad = 1E-3 Ohm L_pad = 1.8e-10 H C_pad = 3.1e-13 F

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C_cou = 1.2E-15 F R_pad = 1E-3 Ohm L_pad = 8.3E-11 H C_pad = 2.8E-14 F

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Define test structure geometry and building blocks

Device Model Parameter Optimization 1) LM algorithm

2) Genetic Algorithms

Obtain device model parameters Fabricate test structures

Extract circuit models for each building blocks using PEEC Measure s-parameters for test structure

Simulate s-parameters using HSPICE

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HSPICE Simulation

Simulate model Parameters

Genetic Algorithms - Reproduction - Crossover - Mutation

Generate new population Error Criteria ?

Extract device model parameters Measure model Parameters

1st parameter = 4.2 range [2, 5]

precision = 0.2

2nd parameter = 7 range [0, 15]

precision = 1

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