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Study on Within-Wafer Non-uniformity Using Finite Element Method

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Fig. 2. Particle-scale FE models used in this study (system length – 1.4 µm) ; (a) model 1(with the particles that are put inside asperity pores and can move freely), and (b) model 2 (with the particles trapped inside aperity pores).
Fig. 5. Variations of the von-Mises and contact stresses along with a SiO 2  wafer surface (applied pressure – 0.04 MPa).
Fig. 6. Variations of the von-Mises stresses generated on the wafer surface from center to one edge obtained by the particle-scale finite element models shown in Fig
Fig. 7 에 particle model 2에서  입자에  의해  발생되 는 von-Mises 응력과 수직 응력을  5개의 연마입자 중 대표로  3개의  연마입자에  대해  비교하여  제시하였다

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