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Characterization of Basal Plane Dislocations in PVT-Grown SiC by Transmission Electron Microscopy

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Fig. 3. TEM micrographs observed along the [10-10] zone axis from the 6H-SiC: a) BF image obtained with the zone axis, (b) two-beam BF image obtained with g = 0006, (c) two-beam BF image obtained with  g = 1-210, (d) two-beam BF image obtained with g = 1-2
Fig. 4. Schematic illustration for determination of the distance between two Shockley partial dislocations observed in Fig
Fig. 7. Schematic illustration for the configuration of arrayed Shockley partial BPDs and SF planes on (0001) basal plane.

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