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Substrate Temperature Dependence for Cd 1−x Mn x Te Thin Films Grown by Using Magnetron Co-sputtering

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Substrate Temperature Dependence for Cd 1−x Mn x Te Thin Films Grown by Using Magnetron Co-sputtering

Heejin Ahn · Youngho Um

Department of Physics, University of Ulsan, Ulsan 680-749, Korea (Received 20 May 2013 : revised 10 June 2013 : accepted 9 August 2013)

Cd

1−x

Mn

x

Te thin films were prepared by co-sputtering of CdTe and Mn targets on soda-lime glass substrates at various substrate temperatures. The sputtering powers of the CdTe and the Mn targets were fixed at 75 W and 65 W, respectively, and the influences of the substrate temperature on the structural properties of the deposited thin films were investigated. The structural parame- ters, such as the lattice constant, crystallite size, and strain, were calculated for various substrate temperatures. All the films showed a polycrystalline nature, and X-ray diffraction showed that the lattice constant decreased from 6.517 ˚ A to 6.346 ˚ A with increasing substrate temperature. Also, the strain decreased from 12.955 × 10

−3

line

2

m

−4

to 2.113 × 10

−3

line

2

m

−4

with increasing sub- strate temperature. From the absorption measurements, the bandgap energy increased from 1.847 eV to 1.876 eV with increasing substrate temperature which may be attributed to the increase in the Mn mole fraction.

PACS numbers: 70.80.Ey, 81.15.Cd Keywords: Cd

1−x

Mn

x

Te, Co-sputtering

Co-sputtering 0 n É; c 8 ý” X ¢ Cd 1−x Mn x Te U c lT c l8 ý M “ ˜ m Æ X Øy ¢ 8 ýÇ X ØV R Ë

¼ ÿ

›r ) . > · * 8 * å ‡ Ú

Ö 

¦ í ß –@ /† < Ɠ § Ó ü t o † < Æõ , Ö  ¦ í ß – 680-749

(2013¸   5 Z 4 20{ 9  ~ à Î6 £ §, 2013¸   6 Z 4 10{ 9  à º& ñ ‘ : r ~ à Î6 £ §, 2013¸   8 Z 4 9{ 9  > F  S X ‰& ñ )

Co-sputtering ~ ½ ÓZ O Ü ¼– Ð Ä »o l ó ø Í 0 A\  CdTeü < Mn  ¿ `  ¦ s 6   x # Œ l ó ø Í “ : r • ¸\  ¦    or v €  " f Cd

1−x

Mn

x

Te ~ à Ì} Œ •`  ¦ $ í  © œ % i  . s M : CdTeõ  Mn  ¿ _  „  § 4 “ É r y Œ •y Œ • 75 Wü < 65 W– Ð “ ¦& ñ “ ¦ l

ó ø Í “ : r • ¸_     o\    É r ½ ¨› ¸& h  : £ ¤$ í `  ¦ › ¸  % i  . l ó ø Í “ : r • ¸    o\    É r ~ à Ì} Œ •_      © œÃ º,   & ñ { 9

 _  ß ¼l  Õ ªo “ ¦   + þ A & ñ • ¸\  ¦ > í ß – % i  . — ¸Ž  H ~ à Ì} Œ •\ " f    & ñ ½ ¨› ¸ › ' a8 £ ¤ ÷ &% 3 Ü ¼ 9, l ó ø Í “ : r

•

¸ 7 £ x † < Ê\         © œÃ º 6.517 ˚ A \ " f 6.346 ˚ A Ü ¼– Ð y Œ ™™ è   H  כ `  ¦ S X ‰ “   % i “ ¦, {  ç ß –   \  - t

  H 1.847 eV \ " f 1.879 eV– Ð 7 £ x † < Ê`  ¦ S X ‰ “   % i  .   + þ A & ñ • ¸  H l ó ø Í “ : r • ¸_  7 £ x \     12.955

×10

−3

line

2

m

−4

\ " f 2.113 ×10

−3

line

2

m

−4

Ü ¼– Ð y Œ ™™ è % i  .

PACS numbers: 70.80.Ey, 81.15.Cd Keywords: Cd

1−x

Mn

x

Te, Co-sputtering

E-mail: [email protected]

913

(2)

I. " e  ] Ø

Semiconductor nuclear radiation detectors  H þ j   H Y >

¸

   s \    É r 5 Å q • ¸– Ð ƒ  ½ ¨÷ &# Q M ® o Ü ¼ 9, X-‚  , y Œ ™ ‚  , Õ

ªo “ ¦ nuclear medicine`  ¦ Ÿ í† < Êô  Ç V , “ É r ì  r  \ " f ´ ú §s 



6   x ÷ &“ ¦ e ”   [1]. a % ~“ É r \  -t  ì  r K 0 p x õ  ™ è+ þ A r Û ¼% 7 ›`  ¦ ]

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“

§  ) a  . þ j   H X-‚  õ  y Œ ™ ‚    Ž Ø  ¦ l \  ¦ ] j Œ • l  0 A # Œ V ,

“ É r  ½ ™× ¼Ì “ sõ  high atomic number\  ¦ ”    o½ + ËÓ ü t ì ø Í

•

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Q  o½ + ËÓ ü t ì ø ͕ ¸^ ‰ ×  æ \ " f CdTe, CdZnTe (CZT), Õ ªo “ ¦ CdMnTe (CMT)  H good energy resolution, high detec- tion efficiency. Õ ªo “ ¦  © œ“ : r \ " f 1 l x  Œ • 0 p x ô  Ç ~ ½ Ó ‚    Ž  Ø

 ¦ l – Ð+ ‹ µ 1 τ  0 p x$ í s   H Ó ü t| 9 s   [3,5].

CMT  H CZT ü < † < Êa  ~ ½ Ó ‚    Ž Ø  ¦ l – Ð  6   x l  0 A

# Œ ´ ú §s  ƒ  ½ ¨÷ &“ ¦ e ”   H X <, Zn_  segregation coeffi- cient  H 1.35 – Ð  t & " f › ¸$ í _     o Ô  ¦ x ô  Ç ì ø ̀   Mn“ É r  _  1s # Q" f ç  H{ 9 ô  Ç   & ñ `  ¦ % 3 `  ¦ à º e ”   H  © œ& h 

`

 ¦ ° ú “ ¦ e ”   [6]. Õ ªo “ ¦ CMT_   ½ ™× ¼Ì “ s \  -t   H 13 meV/[atomic% Mn]m ”  7 £ x † < Ê\  q K , Zn • ¸i ç r \   H 6.7 meV/[atomic% Zn]m ”  7 £ x  Ù ¼– Ð, & h “ É r € ª œ_  Mn • ¸ i ç

Ü ¼– Е ¸  ½ ™× ¼Ì “ s \  -t \  ¦ 1.7 eV \ " f 2.2 eV t     o r

~  ´ à º e ”   H  © œ& h s  e ”   [7].

1980¸  @ /\  ŠҖ Ð BridgmanZ O  [8]Ü ¼– Ð $ í  © œ  ) a CdTe é

#

Qo    & ñ `  ¦ s 6   x # Œ Mn › ¸$ í q \    É r   & ñ ½ ¨› ¸, \  - t

 {  ½ ¨› ¸, Raman í ß –ê ø Í 1 p x \  › ' a ô  Ç ƒ  ½ ¨ ˜ Г ¦ ÷ &% 3   [9]. Õ ª Q  þ j   H \   H ` O Û ¼Y Us $  $ í  © œZ O  (pulse laser de- position; PLD) [10,11], ì  r  ‚   $ í  © œZ O  (molecular beam epitaxy; MBE) [12,13] 1 p x _  ~ ½ ÓZ O Ü ¼– Ð $ í  © œ  ) a ~ à Ì} Œ •_  : £ ¤

$ í

s  ˜ Г ¦÷ &“ ¦ e ”  . s  Qô  Ç ™ è \  ¦ ] j Œ • l  0 AK " f  H

 

† < Ês  \ O   H é ß –  & ñ s  כ ¹½ ¨÷ & 9, s \  @ /ô  Ç F g † < Æ& h  x 9 „   l

& h  : £ ¤$ í \  @ /ô  Ç ƒ  ½ ¨ @ /é ß –y  ×  æ כ ¹ >  ÷ &% 3 Ü ¼ 9, ™ è



 ] j Œ • r  „  F GÓ ü t| 9 _  > hµ 1 Ï ¢ ¸ô  Ç ×  æ כ ¹ô  Ç “   s  .

‘

: r ƒ  ½ ¨\ " f  H · ú ¡Ü ¼– Ð „  F G Ó ü t| 9  > hµ 1 Ï`  ¦ 0 A # Œ, q “ §

&

h   © œu  ç ß –é ß –  9  â ] j& h s “ ¦, ~ à Ì} Œ •_  Ó ü t$ í › ¸] X s  ~ 1 

“

¦, @ /€  & h Ü ¼– Ð ~ à Ì} Œ •`  ¦ $ í  © œr ~  ´ à º RF sputtering sys- tem [14] \ " f DC powerü < RF power\  ¦ 1 l x r \   6   x 

#

Œ Cd

1−x

Mn

x

Te ~ à Ì} Œ •`  ¦ $ í  © œr (  Ü ¼ 9, l ó ø Í “ : r • ¸    o

\

   É r Cd

1−x

Mn

x

Te ~ à Ì} Œ •   & ñ _  ½ ¨› ¸& h  : £ ¤$ í    o\ 

@

/ # Œ › ¸  % i  .

Fig. 1. (Color online) Schematic diagram of the RF co- sputtering system.

II. ÷ m Ç] M ö U ê s0 n É

RF Û ¼( ' a AZ O Ü ¼– Ð  © œ“ : r \ " f ™ è  r Ä »o  (soda lime glass; SLG) l ó ø Í 0 A\  Cd

1−x

Mn

x

Te ~ à Ì} Œ •`  ¦ $ í  © œr (   .

~ Ã

Ì} Œ • 7 £ x ‚ à Ì`  ¦ 0 A # Œ CdTe  ¿ “ É r RF power – Ð 7 £ x ‚ Ã Ì “ ¦, Mn  ¿ “ É r DC power – Ð 7 £ x ‚ Ã Ì % i  . Fig. 1“ É r RF Û ¼(  '

a A  © œu _  > h| Ä Ì• ¸s  . Û ¼( ' a A  ¿ õ  l ó ø Íõ _    o

  H €  • 11 cm– Ð “ ¦& ñ r (   . ™ è  r Ä »o  l ó ø Í“ É r HNO

3

: K

2

CrO

4

: H

2

O

2

\  ¦ 1 : 1 : 20 Ü ¼– Ð ™ D ¥ ½ + Ëô  Ç \ g A 6   xÓ  o

\

 30ì  r 1 l x î ß – { Œ ™   H Ê ê “ ¦í  H • ¸  [ j— : r, B jò ø Í`  ¦, 7 £ x À Óà º í  H Ü

¼– Ð y Œ •y Œ • 3ì  rm ”  œ í6 £ §  [ j' ‘ l \  ¦  6   x # Œ [ j' ‘  % i Ü ¼ 9, “ ¦í  H • ¸ | 9 ™ è Û ¼– Ð Ô  ¦ # Q" f ï ß –À Ó Ô  ¦í  HÓ ü t`  ¦ ] j  % i 



. ¢ ¸ô  Ç, l ó ø Í ³ ð€  _  à ºì  r`  ¦ ] j  l  0 A # Œ $ í  © œ6   x Õ þ

›! Q î ß –\ " f \ P % ƒo  % i  . ~ à Ì} Œ • 7 £ x ‚ Ã Ì „   œ íl  ”  / B N • ¸



 H ' ˜ Ðì  r  * 3 á Ô (turbo molecular pump; TMP)\  ¦  6   x

# Œ ∼1 × 10

−7

Torr – Ð Ä »t  % i Ü ¼ 9, Ar Û ¼_  € ª œ`  ¦ 20 sccm (standard cubic centimeter per minute) – Ð { 9 & ñ

>  Å Ò{ 9  # Œ ∼1 × 10

−3

Torr ”  / B N • ¸ \ " f ~ à Ì} Œ •`  ¦ $ í



© œr (   . $ í  © œ  ) a ~ à Ì} Œ •“ É r X-‚    r] X  (X-ray diffraction:

XRD, Rigaku RAD-3D, Japan)  © œu \  ¦ s 6   x # Œ ~ à Ì} Œ •_ 

½

¨› ¸\  ¦ ì  r$ 3  % i Ü ¼ 9, FE-SEM (field emission scanning electron microscope) Ü ¼– Ð ~ à Ì} Œ •_  ³ ð€   x 9 é ß –€  `  ¦ › ' a ¹ 1 Ï

% i  . F g † < Æ& h  : £ ¤$ í “ É r UV-Vis spectrophotometer (HP UV-VIS 8453, U.S.A)\  ¦  6   x # Œ 190 ∼ 1100 nm % ò % i 

\

" f_  F g È Òõ • ¸\  ¦ 8 £ ¤& ñ # Œ {  ç ß –   \  -t \  ¦ › ¸  

% i  .

III. + s ÇÊ Ý õ m Í ‚ º8 ý

Figure 2(a)  H Cd

1−x

Mn

x

Te ~ à Ì} Œ •_  l ó ø Í “ : r • ¸\   



É r θ-2θ X-‚    r] X  Á º] (\  ¦ ˜ Ð# ŒÅ ғ ¦ e ”  . (111), (220),

(3)

Fig. 2. (Color online) (a) XRD patterns of the Cd

1−x

Mn

x

Te films and (b) variations of the (111) peak FWHM and 2θ as a function of substrate temperature.

Peaks marked by star (?) are hexagonal phase (101) and (103).

(311)€  \  @ /ô  Ç x ß ¼       & ñ ½ ¨› ¸  H zinc blende

½

¨› ¸\  ¦ t “ ¦ e ” 6 £ §`  ¦ S X ‰ “  ½ + É Ã º e ” % 3 Ü ¼ 9, # Œ Q x ß ¼

› '

a ¹ 1 Ï÷ &  H  כ Ü ¼– Ð ˜ Ð     & ñ ½ ¨› ¸\  ¦ t “ ¦ e ” 6 £ §`  ¦ · ú ˜ Ã

º e ”  . l ó ø Í “ : r • ¸ 7 £ x † < Ê\      © œ“ : r $ í  © œ\ " f ˜ Ð s

t  · ú §~   hexagonal (101) Õ ªo “ ¦ (103) x ß ¼[ þ t s    



  H  כ `  ¦ S X ‰ “  Ù þ ¡ . Fig. 2(b)  H l ó ø Í “ : r • ¸ 7 £ x ½ + Éà º 2

Ÿ

¤ ì ø Íu ; Ÿ ¤ s  & h & h  y Œ ™™ è % i Ü ¼ 9,   " f ~ à Ì} Œ •_    & ñ $ í s

 a % ~  f ” `  ¦ · ú ˜ à º e ”  . l ó ø Í “ : r • ¸ 7 £ x ½ + Éà º2 Ÿ ¤  r] X  x

ß ¼_  0 Au   H y Œ •Ü ¼– Ð s 1 l x   H  כ “ É r Cd

1−x

Mn

x

Te \ 

"

f_  Cd, Mn 1 p x _  › ¸$ í q     o\  _ ô  Ç % ò † ¾ ÓÜ ¼– Ð ˜ Ð# Œ”  



.

y

Œ

• Miller t à º\  @ /ô  Ç  r] X y Œ • 2θ\  @ /6 £ x   H     © œ Ã

º a\  ¦ d ”  (1)`  ¦ s 6   x # Œ > í ß – % i  .

a = λ √

h

2

+ k

2

+ l

2

2 sin θ (1)

λ  H  6   x ô  Ç X-‚    © œs “ ¦, θ  H y Œ • x ß ¼\  K { © œ   H y Œ •

•

¸_  ì ø Í ° ú כ, Õ ªo “ ¦ (hkl)“ É r y Œ • x ß ¼\  @ /ô  Ç 2θ\  @ /6 £ x 



 H Miller t à ºs  . Fig. 3(a)  H l ó ø Í “ : r • ¸\  ¦    or (  `  ¦

Fig. 3. (a) Lattice constant, (b) grain size, (c) strain, and (d) number of crystallites as a function of substrate temperature.

M

:_      © œÃ º\  ¦    · p  כ s  . l ó ø Í “ : r • ¸ 7 £ x † < Ê\ 



      © œÃ º y Œ ™™ è† < Ê`  ¦ · ú ˜ à º e ”  . l ó ø Í “ : r • ¸ 300

K{ 9  M :  H   & ñ `  ¦ s À ҍ  H X < € 9 כ ¹ô  Ç \  -t  Ø  æì  r t 

(4)

Table 1. Several structural parameters of Cd

1−x

Mn

x

Te thin films deposited at various substrate temperatures, T

S

. Substrate Lattice Grain Strain Number of Crystallite Thickness Bandgap Temp. (K) Constant a (˚ A) Size D (nm) (10

−3

Line

2

m

−4

) /unit area (10

15

/cm

2

) (nm) Energy (eV)

300 6.517 6.85 12.955 41 358 1.847

373 6.371 9.04 8.571 60 364 1.853

473 6.367 13.06 3.887 28 602 1.867

573 6.346 17.73 2.133 6 1,086 1.876

Fig. 4. (Color online) (a) Plane views (upper panel) and (b) cross section images (lower panel) of the Cd

1−x

Mn

x

Te films at various substrate temperatures.

· ú

§€ Œ ¤Ü ¼ 9   " f   ½ + ˕ ¸ €  • l  M :ë  H \      © œÃ º• ¸ ß ¼

>

   z Œ ¤ “ ¦ Ò q ty Œ •  ) a  . ¢ ¸, l ó ø Í “ : r • ¸ 7 £ x † < Ê\     Mn _  › ¸$ í q  x 7 £ x    H X <, s  כ “ É r u  ¨ 8 Š ) a Mn _  s 

“

: r ì ø Í â (0.80 ˚ A) s  Cd_  s “ : r ì ø Í â (0.97 ˚ A) \  q K   8  Œ • l

 M :ë  H s  . ¢ ¸, 300 K\ " f  H CdTe ü <   ½ + ˽ + É Mn_   Ö ¸

$ í

 o \  -t  ± ú t ë ß – l ó ø Í “ : r • ¸  © œ5 p x >  ÷ &€    Ö ¸$ í



o \  -t  & t Ù ¼– Ð CdTeü <   ½ + Ë   H Mn _  € ª œ• ¸ 7 £ x

  ) a  כ Ü ¼– Ð ó ø Íé ß –  ) a  .

Figure 3(b)  H 8 £ ¤& ñ  ) a  r] X  J ‡  Ü ¼– РÒ'   6 £ § _  Sher- rer d ” `  ¦ s 6   x # Œ ~ à Ì} Œ •_    & ñ { 9  _  ß ¼l \  ¦ > í ß – % i 



 [15].

D = 0.9λ

β cos θ (2)

D  H Cd

1−x

Mn

x

Te ~ à Ì} Œ •_    & ñ { 9  _  ß ¼l s “ ¦, ⍠ H ì ø Í u

; Ÿ ¤ (FWHM)`  ¦    · p . > í ß –   õ , l ó ø Í “ : r • ¸ 7 £ x

½ + Éà º2 Ÿ ¤   & ñ { 9  _  ß ¼l   H 7 £ x † < Ê`  ¦ · ú ˜ à º e ”  . s 

 כ

“ É r FE-SEM s p t _    õ ü < { 9 u ô  Ç .

Figure 3(c)  H l ó ø Í “ : r • ¸_  7 £ x \  @ /ô  Ç ~ à Ì} Œ •s  ~ à ΍  H



 + þ A & ñ • ¸ (strain, ε)\  ¦ ˜ Г    כ s  .  6 £ § d ”  [16]`  ¦ s 6   x

# Œ > í ß – €   l ó ø Í “ : r • ¸ 7 £ x ½ + Éà º2 Ÿ ¤   + þ A & ñ • ¸ ×  ¦

#

Q× ¼  H  כ `  ¦ S X ‰ “  ½ + É Ã º e ”  .

ε =

 λ D cos θ − β

 1

tan θ (3)



 + þ A & ñ • ¸ ×  ¦ # Q× ¼  H  כ “ É r l ó ø Í “ : r • ¸_  7 £ x \     ~ Ã Ì }

Œ

•_  ¿ ºa  ¿ º 0 >t €  " f é # Qo    & ñ _  : £ ¤$ í s    

Fig. 5. (Color online) The bandgap energy and Mn mole fraction as a function of substrate temperature. The in- set shows the absorption spectra for samples with various substrate temperatures as a function of photon energy.



>  ÷ &“ ¦,   " f   & ñ  o s À Ò# Qt €  " f · ú ¡_      © œ Ã

º y Œ ™™ è >  ÷ &  H  כ Ü ¼– Ð ó ø Íé ß –  ) a  .

Figure 3(d)  H €  & h { © œ { 9    & ñ _  > hà º\  ¦   ? /  H  כ Ü

¼– Ð  © œ“ : r{ 9  M : (300 K)  H { 9  _    & ñ s  ¢ ¸§  t  · ú § 

 l ó ø Í “ : r • ¸\  ¦ 7 £ x r ( ” \       & ñ $ í s  † ¾ Ó © œ÷ &€  " f { 9

  ß ¼l  7 £ x  >  ÷ &# Q é ß –0 A€  & h { © œ { 9  _  > hà º

y

Œ

™™ è† < Ê`  ¦ S X ‰ “   ½ + É Ã º e ” Ü ¼ 9, s  כ “ É r FE-SEM s p t _ 

 

õ ü < { 9 u ô  Ç .

Figure 4(a)  H „   Å Ò ‰ & ³p  â `  ¦  6   x # Œ l ó ø Í “ : r • ¸

\

   É r ³ ð€  `  ¦ 8 £ ¤& ñ ô  Ç  כ Ü ¼– Ð ~ à Ì} Œ •s  ç  H{ 9  >  $ í  © œ

÷

&% 3 6 £ §`  ¦ S X ‰ “  ½ + É Ã º e ”  . l ó ø Í “ : r • ¸\  ¦ 7 £ x r ~  ´Ã º2 Ÿ ¤

 

& ñ { 9  [ þ t _  ß ¼l  è  H \  ` (>  & f ” `  ¦ S X ‰ “   % i  .

Fig. 4(b)  H Cd

1−x

Mn

x

Te ~ à Ì} Œ •_  é ß –€  `  ¦ 8 £ ¤& ñ ô  Ç  כ Ü ¼– Ð l

ó ø Í “ : r • ¸ `  ¦  ° ú ˜Ã º2 Ÿ ¤ 7 £ x ‚ à ÌÒ  ¦ s  7 £ x  H † d`  ¦ S X ‰ “   % i  .

~ Ã

Ì} Œ •_  ¿ ºa   H Table 1 \    ? /% 3  .

Figure 5  H Cd

1−x

Mn

x

Te ~ à Ì} Œ •_  l ó ø Í “ : r • ¸\    É r F g f

 ¨ à º Û ¼& 7 ˜à Ô! 3 `  ¦ ˜ Ð# ŒÅ ғ ¦ e ”  . f  ¨ à º> à º α = 2.303 × O.D./d – Ð Å Ò# Qt “ ¦, # Œl " f O.D.  H optical density, d  H

~ Ã

Ì} Œ •_  ¿ ºa s  . ~ à Ì} Œ •_  ¿ ºa  dü < O.D.\  ¦ photon energy

½

¨ç ß –\  @ /{ 9  # Œ (αhν)

2

õ  (hν)_  › ' a > \  ¦ s 6   x # Œ {  ç

ß –  \  -t \  ¦ ½ ¨ % i   [17]. l ó ø Í “ : r • ¸ `  ¦  y Œ ™\   

(5)



 {  ç ß –  \  -t  1.847 eV\ " f 1.876 eV– Ð 7 £ x † < Ê`  ¦

· ú

˜ à º e ”  . % i Ü ¼– Ð d ”  (5)– РÒ'  {  ç ß –   \  -t \  ¦ @ /{ 9 

# Œ Mn_  › ¸$ í q \  ¦ ½ ¨½ + É Ã º e ”   [18].

E

g

(eV ) = 1.510 + 1.303x (4) l

ó ø Í “ : r • ¸_  7 £ x \     Mn_  › ¸$ í q  7 £ x  >  ÷ &

“

¦,  ½ ™× ¼Ì “ s \  -t • ¸ 7 £ x    H ‰ & ³ © œ“ É r Lautenchlager 1 p x [19] s  ] jr ô  Ç CdTe {  — ¸4 S q`  ¦ s 6   x # Œ [ O " î ½ + É Ã º e ” 



. 7 £ ¤, Mn 3d↑ (spin up) õ  Mn 3d↓ (spin down) ï  r 0 A  H CdTe „   @ /_  =  G @ /l  (Te_  4p  © œI )\  @ /K " f @ /g A

&

h Ü ¼– Ð ì  r o ÷ &# Q e ” Ü ¼ 9, „  • ¸@ /  H ŠҖ Ð € ª œs “ : r (Cd _  5s  © œI )Ü ¼– Ð ½ ¨$ í ÷ &# Q e ”  . Õ ªo “ ¦ „   @ /_  \  -t  {

  H è  H \  ­ Ö c & ñ • ¸– Ð s 1 l x t  · ú §Ü ¼ 9, „  • ¸@ /_   © œ ± ú 

“ É

r \  -t  { _  s-like 1 l x † < Êà º  H Mn 3d  © œI ü < ™ D ¥ ½ + Ë÷ &

t

 · ú §  H  . Õ ª QÙ ¼– Ð Mn 3d  © œI _  ™ D ¥ ½ + ˓ É r {  ç ß –   \  - t

\  y © œ >  % ò † ¾ Ó`  ¦ Å Òt  · ú §Ü ¼ 9 [20],   õ & h Ü ¼– Ð {  ç ß –

 

 \  -t _  7 £ x   H Mn › ¸$ í q  x_  7 £ x \         © œ Ã

º y Œ ™™ è l  M :ë  H Ü ¼– Ð [ O " î | ¨ c à º e ”  .

IV. + s Ç Â ] Ø

Co-sputtering ~ ½ ÓZ O Ü ¼– Ð Ä »o l ó ø Í 0 A\  CdTeü < Mn 



¿ `  ¦ s 6   x # Œ l ó ø Í “ : r • ¸\  ¦    or & " f Cd

1−x

Mn

x

Te ~ Ã Ì }

Œ

•`  ¦ $ í  © œ % i  . l ó ø Í “ : r • ¸ 7 £ x ½ + Éà º2 Ÿ ¤     © œÃ º

y

Œ

™™ è % i Ü ¼ 9, Õ ª\       + þ A & ñ • ¸ 12.955 line

2

m

−4

\ 

"

f 2.133 line

2

m

−4

Ü ¼– Ð y Œ ™™ è† < Ê`  ¦ S X ‰ “   % i  . ¢ ¸ô  Ç l ó ø Í

“

: r • ¸ 7 £ x † < Ê\     Mn_  › ¸$ í q  ‚  + þ A& h Ü ¼– Ð 7 £ x 

% i Ü ¼ 9,  ½ ™× ¼Ì “ s \  -t • ¸ 1.847 eV\ " f 1.876 eV– Ð 7 £ x

 % i  . ‘ : r  7 Hë  H _  ƒ  ½ ¨  õ – РÒ' , Cd

1−x

Mn

x

Te ~ Ã Ì }

Œ

•_  ½ ¨› ¸& h  : £ ¤$ í “ É r l ó ø Í “ : r • ¸ü < B Ä º x 9 ] X ô  Ç › ' a >  e ”  Ü

¼ 9,  € ª œô  Ç    o      H  כ `  ¦ · ú ˜ à º e ” % 3  .

P

c p 8 ý ò k >

s

  7 Hë  H“ É r 2010¸  • ¸ “ §¹ ¢ ¤ õ † < Æl Õ ü t  Ò_  F " é ¶ Ü ¼– Ð ô  Ç

²

D Gƒ  ½ ¨F é ß –`  ¦ : Ÿ x¨ 8 Š ~ ½ Ó ‚   l Õ ü t > hµ 1 Ï á Ԗ ÐÕ ªÏ þ › (2012- 0630) _  t " é ¶`  ¦ ~ à Î  à º' Ÿ ÷ &% 3 6 £ §.

REFERENCES

[1] T. Takahashi and S. Watanabe, IEEE Trans. Nucl.

Sci. 950, 48 (2001).

[2] P. J. Sellin, Nucl. Instrum. Methods A 513, 332 (2003).

[3] G. A. Carini, A. E. Bolotnikov, G. S. Camarda and R. B. James, Nucl. Instrum, Methods A 579, 120 (2007).

[4] A. Mycielski, A. Burger, M. Sowinska, M. Groza and A. Szadkowski et al., Phys. Status Solidi C 1578, 5 (2005).

[5] A. Burger, K. Chattopadhyay, H. Chen, J. O. Ndap and X. Ma et al., J. Cryst. Growth 872, 198 (1999).

[6] A. Tanaka, T. Masa, S. Seto and T. Kawasaki, J.

Cryst. Growth 94, 166 (1989).

[7] J. E. Toney, T. E. Schlesinger and R. B. James, Nucl. Instrum. Methods Phys. Res. A 428, 14 (1999).

[8] F. V. Wald and G. Entine, Nucl. Instrum. Methods 150, 13 (1978).

[9] J. K. Furdyna, Diluted Magnetic Semiconductors, in SEMICONDUCTORS and SEMIMETALS, edited by J. K. Furdyna and J. Kossut (Academic press, 1988), Vol. 25.

[10] H. J. Masterson, J. G. Lunney and J. M. D. Coey, J. Appl. Phys. 81, 799 (1997).

[11] J. J. Dubowski, J. Cryst. Growth 101, 105 (1990).

[12] T. Yasuda, M. D. Duc and Y. Segawa, J. Cryst.

Growth 159, 214 (2000).

[13] T. R. Yang, C. C. Lu, M. M. Dvoynenko and W. C.

Chou, Physica B 928, 329 (2003).

[14] Y. Igasaki and H. Saito, J. Appl. Phys. 70, 3613 (1991).

[15] L. E. Alexander and H. P. Klug, J. Appl. Phys. 21, 137 (1950).

[16] T. Minami, H. Sato, S. Takata, N. Ogawa and T.

Mouri, Jpn. J. Appl. Phys. L 3, 1106 (1992).

[17] T. Koyanagi and K. Matsubara, J. Appl. Phys. 61, 3020 (1987).

[18] K. H. Kim, A. E. Bolotnikov, G. S. Camardam, G.

Yang and A. Hossain, J. Appl. Phys. 106, 023706 (2009).

[19] P. Lautenchlager, S. Logothetidies, L. Vina and M.

Cardona, Phys. Rev. B 32, 3811 (1985).

[20] D. L. Greenary and G. Harbeke, Optical Properties

and Band Structure of Semiconductors (Pergamon

Press, 1970), p. 106.

수치

Fig. 1. (Color online) Schematic diagram of the RF co- co-sputtering system.
Fig. 3. (a) Lattice constant, (b) grain size, (c) strain, and (d) number of crystallites as a function of substrate temperature
Fig. 4. (Color online) (a) Plane views (upper panel) and (b) cross section images (lower panel) of the Cd 1−x Mn x Te films at various substrate temperatures.

참조

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