2
2 20 0 00 0 08 8 8년 년 년 2 2 2월 월 월 석
석 석사 사 사학 학 학위 위 위논 논 논문 문 문
S S Si i il l lv v ve e er r r나 나 나노 노 노입 입 입자 자 자를 를 를 첨 첨 첨가 가 가한 한 한 저 저 저온 온 온 소 소 소성 성 성용 용 용 무 무 무연 연 연 페 페 페이 이 이스 스 스트 트 트의 의 의 제 제 제조 조 조
P
P Pr r re e ep p pa a ar r ra a at t ti i io o on n no o of f fP P Pb b b- - -f f fr r re e ee e eS S Si i il l l v v ve e er r rP P Pa a as s st t te e eA A Ad d dd d di i in n ng g g N
N
Na a an n no o op p pa a ar r rt t ti i ic c cl l le e es s sf f fo o or r rL L Lo o ow w w S S Si i in n nt t te e er r ri i in n ng g g T T Te e em m mp p pe e er r ra a at t tu u ur r re e e
조 조
조선 선 선대 대 대학 학 학교 교 교 대 대 대학 학 학원 원 원
첨 첨
첨단단단소소소재재재공공공학학학과과과
박 박 박 성 성 성 현 현 현
S S Si i il l lv v ve e er r r나 나 나노 노 노입 입 입자 자 자를 를 를 첨 첨 첨가 가 가한 한 한 저 저 저온 온 온 소 소 소성 성 성용 용 용 무 무 무연 연 연 페 페 페이 이 이스 스 스트 트 트의 의 의 제 제 제조 조 조
P
P Pr r re e ep p pa a ar r ra a at t ti i io o on n no o of f fP P Pb b b- - -f f fr r re e ee e eS S Si i il l l v v ve e er r rP P Pa a as s st t te e eA A Ad d dd d di i in n ng g g N
N
Na a an n no o op p pa a ar r rt t ti i ic c cl l le e es s sf f fo o or r rL L Lo o ow w w S S Si i in n nt t te e er r ri i in n ng g g T T Te e em m mp p pe e er r ra a at t tu u ur r re e e
2008년 2월
조 조 조선 선 선대 대 대학 학 학교 교 교 대 대 대학 학 학원 원 원
첨 첨
첨단단단소소소재재재공공공학학학과과과
박 박
박 성 성 성 현 현 현
S S Si i il l lv v ve e er r r나 나 나노 노 노입 입 입자 자 자를 를 를 첨 첨 첨가 가 가한 한 한 저 저 저온 온 온 소 소 소성 성 성용 용 용 무 무 무연 연 연 페 페 페이 이 이스 스 스트 트 트의 의 의 제 제 제조 조 조
지지지도도도교교교수수수 이이이 종종종 국국국
이 논문을 공학석사학위신청 논문으로 제출함.
2007년 10월
조 조 조선 선 선대 대 대학 학 학교 교 교 대 대 대학 학 학원 원 원
첨 첨
첨단단단소소소재재재공공공학학학과과과
박 박
박 성 성 성 현 현 현
박성현의 석사학위논문을 인준함
위원장 조선대학교 부교수 양 권 승 인 위 원 조선대학교 교 수 이 종 국 인 위 원 조선대학교 조교수 신 동 찬 인
2007년 11월
조 조
조선 선 선대 대 대학 학 학교 교 교 대 대 대학 학 학원 원 원
목
목목 차차차
Li stofTabl es
························································································································ⅢLi stofFi gures
······················································································································ⅣA A
ABBBSSSTTTRRRAAACCCTTT··················································································································Ⅶ 제
제
제 111장장장...서서서 론론론 ···············································································································1
제 제 제 222장장장...이이이론론론적적적 배배배경경경···························································································3
제 제 제 1 1 1절 절 절. . .도 도 도전 전 전성 성 성 페 페 페이 이 이스 스 스트 트 트
···················································································3제 제 제 2 2 2절 절 절. . .전 전 전도 도 도성 성 성 s s si i il l lv v ve e er r r페 페 페이 이 이스 스 스트 트 트
·································································71 1 1. . .전 전 전도 도 도성 성 성 금 금 금속 속 속분 분 분말 말 말
································································································72 2 2. . .유 유 유리 리 리 분 분 분말 말 말
················································································································83 3 3. . .유 유 유기 기 기 용 용 용매 매 매
················································································································9제 제 제 3 3 3절 절 절. . .나 나 나노 노 노 s s si i il l l v v ve e er r r입 입 입자 자 자 제 제 제조 조 조
··································································16제 제 제 4 4 4절 절 절. . .후 후 후막 막 막제 제 제조 조 조용 용 용 프 프 프린 린 린팅 팅 팅 기 기 기술 술 술
·····························································19제 제 제 5 5 5절 절 절. . .후 후 후막 막 막전 전 전극 극 극의 의 의 응 응 응용 용 용
·················································································23제 제 제 333장장장...나나나노노노입입입자자자 첨첨첨가가가량량량에에에 따따따른른른 sssiiilllvvveeerrr페페페이이이스스스트트트의의의 소 소 소결결결 및및및 전전전도도도특특특성성성 ·····································································································26
제 제 제 1 1 1절 절 절. . .서 서 서 론 론 론
···············································································································26제 제 제 2 2 2절 절 절. . .실 실 실험 험 험방 방 방법 법 법
·····································································································28제 제 제 3 3 3절 절 절. . .결 결 결과 과 과 및 및 및 고 고 고찰 찰 찰
··························································································33제 제 제 4 4 4절 절 절. . .결 결 결 론 론 론
···············································································································59제 제
제 444 장장장...BBBiiimmmooodddaaalll형형형 나나나노노노 sssiiilllvvveeerrr 페페페이이이스스스트트트의의의 소소소결결결 및
및
및 전전전도도도특특특성성성 ······················································································································60
제 제 제 1 1 1절 절 절. . .서 서 서 론 론 론
···············································································································60제
제 제 2 2 2절 절 절. . .실 실 실험 험 험방 방 방법 법 법
·····································································································61제 제 제 3 3 3절 절 절. . .결 결 결과 과 과 및 및 및 고 고 고찰 찰 찰
··························································································63제 제 제 4 4 4절 절 절. . .결 결 결 론 론 론
···············································································································88제 제
제 555장장장...종종종합합합 결결결론론론 ································································································89
참 참 참 고 고 고 문 문 문 헌 헌 헌
L L Li i is s st t to o of f fT T Ta a ab b bl l le e es s s
TTTaaabbbllleee111Sheetresistivityofmetalpowders TTTaaabbbllleee222EnvironmentalregulationofEU33) TTTaaabbbllleee333Kindsoforganicsolvents34)
TTTaaabbbllleee444Physicalpropertiesandrequirementsoforganicbinders4) TTTaaabbbllleee555Functionoforganicadditivessystem forthickfilm paste4) TTTaaabbbllleee666Syntheticmethodsofnanopowders45)
TTTaaabbbllleee777Physicalparametersforprintingtechnology48)
TTTaaabbbllleee888Thecompositionofsilverpastewithnanoparticlecontent TTTaaabbbllleee999Thecompositionofsilverpastewithglasscontent
L L Li i is s st t to o of f fF F Fi i ig g gu u ur r re e es s s
F F
Fiiiggg...111...Printingandsinteringprocessofconductivepaste.
F F
Fiiiggg...222...Schematicsofscreenprinting.48) F
F
Fiiiggg...333...SchematicsofPDP andsilverelectrode.49) F
F
Fiiiggg...444...Flow chartforthepreparationofsilvernanoparticles.
F F
Fiiiggg...555...Flow chartforthepreparationofsilverpaste.
F F
Fiiiggg...666...XRD patternandFE-SEM micrographofsilvernanoparticles.
F F
Fiiiggg...777...FE-SEM micrographsofthick film preparedfrom N0Pastefired at(a)120°C and(b)300°C.
F F
Fiiiggg...888...FE-SEM micrographs of thick film prepared from N0 Paste sinteredat(a)400°C,(b)450°C,(c)500°C,(d)550°C and(e)ahigh magnificationimageof(d).
F F
Fiiiggg...999...Fraction ofpores on thick film prepared from N0 Paste with sinteringtemperature.
F F
Fiiiggg...111000...Sheetresistivity ofthick film prepared from N0 Paste as a functionofsinteringtemperature.
F F
Fiiiggg...111111...FE-SEM micrographsofthickfilm preparedfrom N5Pastefired at(a)120°C and(b)300°C.
F F
Fiiiggg...111222...FE-SEM micrographs of thick film prepared from N5 Paste sinteredat(a)400°C,(b)450°C,(c)500°C,(d)550°C and(e)ahigh magnificationimageof(d).
F F
Fiiiggg...111333...Fraction ofpores on thick film prepared from N5 Paste with sinteringtemperature.
F F
Fiiiggg...111444...Sheet resistivity ofthick film prepared from N5 paste as a functionofsinteringtemperature.
F F
Fiiiggg...111555...FE-SEM micrographs ofthick film prepared from N10 Paste firedat(a)120°C and(b)300°C.
F F
Fiiiggg...111666...FE-SEM micrographs ofthick film prepared from N10 Paste
sinteredat(a)400°C,(b)450°C,(c)500°C,(d)550°C and(e)ahigh magnificationimageof(d).
F F
Fiiiggg...111777...Fraction ofpores on thick film prepared from N10 Paste with sinteringtemperature.
F F
Fiiiggg...111888...Sheetresistivity ofthick film prepared from N10 Paste as a functionofsinteringtemperature.
F F
Fiiiggg...111999...FE-SEM micrographs ofthick film prepared from N20 Paste firedat(a)120°C and(b)300°C.
F F
Fiiiggg...222000...FE-SEM micrographs ofthick film prepared from N20 Paste sinteredat(a)400°C,(b)450°C,(c)500°C,(d)550°C and(e)ahigh magnificationimageof(d).
F F
Fiiiggg...222111...Fraction ofpores on thick film prepared from N20 Paste with sinteringtemperature.
F F
Fiiiggg...222222...Sheetresistivity ofthick film prepared from N20 Paste as a functionofsinteringtemperature.
F F
Fiiiggg...222333...XRD patternandFE-SEM micrographofsilvernanoparticles.
F F
Fiiiggg...222444...FE-SEM micrographs ofthick film prepared from N0G3 Paste firedat(a)120°C and(b)300°C.
F F
Fiiiggg...222555...FE-SEM micrographs ofthick film prepared from N0G3 Paste sinteredat(a)400°C,(b)450°C,(c)500°C,(d)550°C and(e)ahigh magnificationimageof(d).
F F
Fiiiggg...222666...Fraction ofporeson thick film prepared from N0G3Pastewith sinteringtemperature.
F F
Fiiiggg...222777...Sheetresistivity ofthick film prepared from N0G3 Paste as a functionofsinteringtemperature.
F F
Fiiiggg...222888...FE-SEM micrographs ofthick film prepared from N5G3 Paste firedat(a)120°C and(b)300°C.
F F
Fiiiggg...222999...FE-SEM micrographs ofthick film prepared from N5G3 Paste sinteredat(a)400°C,(b)450°C,(c)500°C,(d)550°C and(e)ahigh
magnificationimageof(d).
F F
Fiiiggg...333000...Fraction ofporeson thick film prepared from N5G3Pastewith sinteringtemperature.
F F
Fiiiggg...333111...Sheetresistivity ofthick film prepared from N5G3 Paste as a functionofsinteringtemperature.
F F
Fiiiggg...333222...FE-SEM micrographs ofthick film prepared from N5G6 Paste firedat(a)120°C and(b)300°C.
F F
Fiiiggg...333333...FE-SEM micrographs ofthick film prepared from N5G6 Paste sinteredat(a)400°C,(b)450°C,(c)500°C,(d)550°C and(e)ahigh magnificationimageof(d).
F F
Fiiiggg...333444...Fraction ofporeson thick film prepared from N5G6Pastewith sinteringtemperature.
F F
Fiiiggg...333555...Sheetresistivity ofthick film prepared from N5G6 Paste as a functionofsinteringtemperature.
F F
Fiiiggg...333666...FE-SEM micrographs ofthick film prepared from N5G9 Paste firedat(a)120°C and(b)300°C.
F F
Fiiiggg...333777...FE-SEM micrographs ofthick film prepared from N5G9 Paste sinteredat(a)400°C,(b)450°C,(c)500°C,(d)550°C and(e)ahigh magnification image of (d) and (f) EDS analysis on the region, markedwithanasterisk,inpictureof(e).
F F
Fiiiggg...333888...Fraction ofporeson thick film prepared from N5G9Pastewith sinteringtemperature.
F F
Fiiiggg...333999...Sheetresistivity ofthick film prepared from N5G9 Paste as a functionofsinteringtemperature.
AAABBBSSSTTTRRRAAACCCTTT
P P
Pr r re e ep p pa a ar r ra a at t ti i io o on n no o of f fP P Pb b b- - -f f fr r re e ee e eS S Si i il l lv v ve e er r rP P Pa a as s st t te e eA A Ad d dd d di i in n ng g g N
N
Na a an n no o op p pa a ar r rt t ti i ic c cl l le e es s sf f fo o or r rL L Lo o ow w w S S Si i in n nt t te e er r ri i in n ng g g T T Te e em m mp p pe e er r ra a at t tu u ur r re e e
Park,Sung-Hyun
Advisor:Prof.Lee,Jong-Kook,Ph.D.
Dept.ofAdvancedMaterialsEngineering, GraduateSchoolofChosunUniversity.
Thick film technologies are used in severalfields.Numerous types of electronic,mechanical,chemical and energy supply device are currently fabricated using thick film deposition processes. Thick film system of metal-glass-organic composite has been used to produce printed circuits becauseoftheirspeedandrepeatabilityintheelectronicindustry.
Silverpowdersareused in electronicsduetouniquepropertiesofhigh electricalandthermalconductivity.Silverpastecontaining PbO-basedglass has been commonly used in microelectronic packages because silver has high electricaland thermalperformance.Silverthick filmswith PbO-based glass are used extensively for making electricalcontacts in silicon solar cells,hybrid circuits and otherdevices owing to theirexcellentelectrical properties.
The PbO-based glass plays a role in achieving densification ofsilver
