Growth and Physical Properties of ZnTe0.1Se0.9 Thin Films Prepared on Indium Tin Oxide Substrates
Do Hyung Kim · Soo Chang Choi · Eun Jeong Yoon · Chang Young Park · Jong Duk Lee · Jeoung Ju Lee∗
Department of Physics and Research Institute of Natural Science, Gyeongsang National University, Jinju 660-701, Korea
(Received 13 November 2012 : revised 29 November 2012 : accepted 31 December 2012)
ZnTe0.1Se0.9 films were prepared on indium-tin-oxide (ITO)-coated glass substrates by using thermal evaporation. X-ray diffraction spectra showed that the ZnTe0.1Se0.9 films had a ZnSe zincblende structure with lattice constant a = 5.668 ˚Aand that the crystals were preferentially grown with a (111) orientation. The optical energy band gap, measured at room temperature, of the as-deposited ZnTe0.1Se0.9 film was 2.63 eV and increased to about 2.66 eV and then decreased to 2.52 eV upon annealing in a vacuum electric furnace at temperatures from 200◦C to 500◦C.
The dynamical behavior of the charge carriers in the ZnTe0.1Se0.9 film was investigated by using photoinduced discharge characteristic (PIDC) techniques.
PACS numbers: 61.10.-i, 81.05.Hd
Keywords: ZnTe0.1Se0.9 thin film, Annealing effect, Band gap energy, PIDC
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PACS numbers: 61.10.-i, 81.05.Hd
Keywords: ZnTe0.1Se0.9 ~ÃÌ}, \P%o ´òõ, \ -t { çß ,F gÄ»l ~½Ó:£¤$í
∗E-mail: [email protected]
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