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보론 에미터를 이용한 n-type 결정질 실리콘 태양전지 특성

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C-13

Synthesis and Characterization of CZTS film deposited by Chemical Bath Deposition method

Vinaya Kumar Arepalli, Challa Kiran kumar, Namkyu Park, Lam Van Nang, Eui-Tae Kim†

Department of Materials Science and Engineering, Chungnam National University (etkim@cnu.ac.kr†)

The thin-film photovoltaic absorbers (CdTe and Cu(In,Ga)Se2) can achieve solar conversion efficiencies of up to 20% and

are now commercially available, but the presence of toxic (Cd,Se) and expensive elemental components (In, Te) is a real issue as the demand for photovoltaics rapidly increases. To overcome these limitations, there has been substantial interest in developing viable alternative materials, such as Cu2ZnSnS4 (CZTS) is an emerging solar absorber that is structurally

similar to CIGS, but contains only earth abundant, non-toxic elements and has a near optimal direct band gap energy of 1.4 - 1.6 eV and a large absorption coefficient of ∼104 cm-1. The CZTS absorber layers are grown and investigated by

various fabrication methods, such as thermal evaporation, e-beam evaporation with a post sulfurization, sputtering, non-vacuum sol–gel, pulsed laser, spray-pyrolysis method and electrodeposition technique. In the present work, we report an alternative aqueous chemical approach based on chemical bath deposition (CBD) method for large area deposition of CZTS thin films. Samples produced by our method were analyzed by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, absorbance and photoluminescence. The results show that this inexpensive and relatively benign process produces thin films of CZTS exhibiting uniform composition, kesterite crystal structure, and some factors like triethanolamine, ammonia , temperature which strongly affect on the morphology of CZTS film.

Keywords: Solar Cell , CZTS , CBD

C-14

보론 에미터를 이용한

n-type 결정질 실리콘 태양전지 특성

김찬석, 탁성주, 박성은, 김영도, 박효민, 김성탁, 김현호, 배수현, 김동환† 고려대학교 신소재공학과 (solar@korea.ac.kr†) 현재 양산 중인 대부분의 결정질 실리콘 태양전지는 p-type 실리콘 기판의 전면에 인 (phosphorus) 을 확산시켜 에미터로 사용한 스크린 프린티드 태양전지 (Screen Printed Solar Cells) 이다. 위 태양전지의 단점은 p-type 기판의 광열화현상 (Light Induced Degradation) 문제와 후면 알루미늄 금속 전극으로 인한 휨 현상 등이 있다. 이러한 단점을 해결하기 위해 n-type 기판의 전면에 보론 (Boron) 을 도핑하여 에미터로 사용하고, 후면 전계 (Back Surface Field) 로 인 (Phosphorus) 을 도핑한 태양전지에 대한 연구가 활발히 진행 중이다. 본 연구에서는, 튜브 전기로 (tube furnace) 를 이용해 n-type 실리 콘 웨이퍼 전면에 보론 도핑을 하고 이와 마찬가지로 웨이퍼 후면에 인 도핑을 실시하였다. 그리고 전면과 후면의 패시베 이션을 위해 얇게 산화막을 형성한 후 실리콘 질화막 (SiNx) 을 증착하였다. 에미터와 후면 전계 그리고 패시베이션 층의 특성을 평가하기 위해 QSSPC (Quasi-Steady-State PhotoConductance) 로 소수반송자 수명 (Minority Carrier Lifetime) 과 포화 전류 (Saturation current) 값을 측정하였다.

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